Abstract: An electron beam writing method includes calculating, in a case of writing a pattern with an electron beam on a target object which irreversibly deforms depending on a dose distribution of the electron beam, a first positional deviation amount of the pattern deviated from its design position because of an irreversible deformation of the target object after completion of writing processing, calculating, based on the first positional deviation amount, a correction amount for correcting a position of the pattern or an irradiation position of an electron beam in forming the pattern by irradiation of the electron beam on the target object, and performing, based on the correction amount, writing processing to write the pattern on the target object with an electron beam.

Abstract: According to one aspect of the present invention, a multiple charged particle beam writing includes: a dose representative value calculator unit configured to calculate, for each divided mesh region, a representative value of a plurality of doses of a plurality of beams with which an inside of the mesh region is irradiated as a dose representative value; a calculation processing unit configured to perform a calculation process of a rising temperature given to a mesh region of interest being one of the plurality of mesh regions by heat due to beam irradiation to each of the plurality of mesh regions in a processing region corresponding to the beam array region, the calculation process being performed by a convolution process using the dose representative value for each of the plurality of mesh regions and a thermal spread function representing thermal spread generated by the plurality of mesh regions; an effective temperature calculator unit configured to perform a repetitive process of repeating the calculati

Abstract: A multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the beam on a substrate, n (n?3) correction lenses correcting an imaging state of the multi charged particle beam, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied. The electric field control electrode generates an electric field between the substrate and the electrode. The objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the beam. m (n?m?1) correction lenses of the n correction lenses are magnetic correction lenses placed in a lens magnetic field of the second objective lens. (n?m) correction lenses are placed upstream of the lens magnetic field of the second objective lens in the travel direction.

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through the limiting aperture member, three or more correction lenses correcting an imaging state of the multi charged particle beam on the substrate, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied, the electric field control electrode generating an electric field between the substrate and the electric field control electrode. The two or more-stage objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the multi charged particle beam. The three or more correction lenses are placed upstream of a lens magnetic field of the second objective lens in the travel direction of the multi charged particle beam.

Abstract: Position shifts caused by charging phenomena can be corrected with high accuracy.

Abstract: An electron beam writing apparatus according to the present invention includes a potential regulating member arranged to be upstream of a target object in the case where the target object is placed on a stage, and configured to be set to have a fixed potential being positive with respect to the target object, a potential applying circuit configured to apply a voltage to the target object or the potential regulating member so that the potential regulating member has the fixed potential, and a correction circuit configured to correct a positional deviation of the electron beam on a surface of the target object which occurs in the case where the target object is irradiated with the electron beam in the state in which the potential regulating member has the fixed potential.

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

Abstract: In a charged particle beam writing method according to an embodiment, a charged particle beam is deflected by a deflector, and a pattern is written by irradiating, with the charged particle beam, a substrate having a resist film formed thereon. The method includes irradiating a pattern region, in which a pattern is to be formed, with a beam at a first dose, irradiating at least part of a non-pattern region, in which a pattern is not to be formed, with the charged particle beam at a second dose, at which the resist film is not dissolved away, and determining the second dose based on the first dose and a charge amount of the resist film corresponding to a pattern density of the pattern region, wherein a charge amount difference between the pattern region and a non-dissolution irradiation region, which is irradiated at the second dose, is smaller than that obtained when the second dose is zero.

Abstract: In one embodiment, a charged particle beam writing method includes transferring a substrate to a writing chamber of a charged particle beam writing apparatus by use of a transfer mechanism while maintaining each of the writing chamber and the transfer mechanism at a predetermined temperature, calculating correction amounts for charged particle beams based on correction data for charged particle beam irradiation positions each associated with a previously obtained elapsed time from a predetermined starting point in time of transfer of the substrate and the elapsed time at a point in time of irradiation with each of the charged particle beams, and applying the charged particle beams to positions corrected based on the calculated correction amounts for the charged particle beams to write a pattern on the substrate.

Abstract: The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy.

Abstract: An amount of charge of a substrate is promptly and accurately calculated. A charged particle beam writing method includes a step (S100) for virtually dividing a writing region of the writing target substrate in a mesh-like manner and calculating a pattern density representing an arrangement ratio of the pattern for each mesh region, a step (S102) for calculating a dose for each mesh region using the pattern density, a step (S104) for calculating a charge amount based on a film thickness of the resist film formed on the substrate and the calculated dose by using a predetermined function for charge amount calculation, the function using, as variables, the film thickness of the resist film and the dose, a step (S106) for calculating a position shift amount of a writing position from the calculated charge amount, and a step (S108) for correcting an irradiation position of the charged particle beam using the position shift amount.

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

Abstract: Position shifts caused by charging phenomena can be corrected with high accuracy.

Abstract: A charged-particle beam writing apparatus includes a writing chamber to house a stage having a writing object placed thereon, a beam irradiator to irradiate a charged particle beam to the writing object placed on the stage, a stage driver to move the stage, a temperature distribution calculator to calculate temperature distribution of the writing object caused by a heat source in the writing chamber, based on movement history information of the stage, a deformed amount calculator to calculate a deformed amount of the writing object based on a constraint condition of the writing object placed on the stage and the calculated temperature distribution, and a position corrector to correct an irradiation position of the charged particle beam to the writing object based on the calculated deformed amount. The beam irradiator irradiates the charged particle beam based on the irradiation position corrected by the position corrector.

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

Abstract: A charged-particle beam writing apparatus includes a writing chamber to house a stage having a writing object placed thereon, a beam irradiator to irradiate a charged particle beam to the writing object placed on the stage, a stage driver to move the stage, a temperature distribution calculator to calculate temperature distribution of the writing object caused by a heat source in the writing chamber, based on movement history information of the stage, a deformed amount calculator to calculate a deformed amount of the writing object based on a constraint condition of the writing object placed on the stage and the calculated temperature distribution, and a position corrector to correct an irradiation position of the charged particle beam to the writing object based on the calculated deformed amount. The beam irradiator irradiates the charged particle beam based on the irradiation position corrected by the position corrector.

Abstract: In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF so as to control an irradiation time by deflecting the charged particle beam having passed through the current limiting aperture, a blanking aperture blocking the charged particle beam deflected by the blanking deflector in such a manner that the beam OFF state is entered, and an electron lens disposed between the current limiting aperture and the blanking aperture. A lens value set for the electron lens is substituted into a given function to calculate an offset time. The offset time is added to an irradiation time for writing a pattern to correct the irradiation time. The blanking deflector switches between the beam ON and the beam OFF based on the corrected irradiation time.

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

Abstract: In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF so as to control an irradiation time by deflecting the charged particle beam having passed through the current limiting aperture, a blanking aperture blocking the charged particle beam deflected by the blanking deflector in such a manner that the beam OFF state is entered, and an electron lens disposed between the current limiting aperture and the blanking aperture. A lens value set for the electron lens is substituted into a given function to calculate an offset time. The offset time is added to an irradiation time for writing a pattern to correct the irradiation time. The blanking deflector switches between the beam ON and the beam OFF based on the corrected irradiation time.