Patents by Inventor Haruyuki NOMURA

Haruyuki NOMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10114290
    Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: October 30, 2018
    Assignee: NuFlare Technology, Inc.
    Inventor: Haruyuki Nomura
  • Publication number: 20180269034
    Abstract: In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF so as to control an irradiation time by deflecting the charged particle beam having passed through the current limiting aperture, a blanking aperture blocking the charged particle beam deflected by the blanking deflector in such a manner that the beam OFF state is entered, and an electron lens disposed between the current limiting aperture and the blanking aperture. A lens value set for the electron lens is substituted into a given function to calculate an offset time. The offset time is added to an irradiation time for writing a pattern to correct the irradiation time. The blanking deflector switches between the beam ON and the beam OFF based on the corrected irradiation time.
    Type: Application
    Filed: February 5, 2018
    Publication date: September 20, 2018
    Applicant: NuFlare Technology, Inc.
    Inventor: Haruyuki NOMURA
  • Patent number: 9673018
    Abstract: A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: June 6, 2017
    Assignee: NuFlare Technology, Inc.
    Inventor: Haruyuki Nomura
  • Publication number: 20170139327
    Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.
    Type: Application
    Filed: November 3, 2016
    Publication date: May 18, 2017
    Applicant: NuFlare Technology, Inc.
    Inventor: Haruyuki NOMURA
  • Publication number: 20160336141
    Abstract: A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.
    Type: Application
    Filed: May 3, 2016
    Publication date: November 17, 2016
    Applicant: NuFlare Technology, Inc.
    Inventor: Haruyuki NOMURA
  • Patent number: 9336980
    Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: May 10, 2016
    Assignee: NuFlare Technology, Inc.
    Inventor: Haruyuki Nomura
  • Publication number: 20150303026
    Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.
    Type: Application
    Filed: March 20, 2015
    Publication date: October 22, 2015
    Applicant: NuFlare Technology, Inc.
    Inventor: Haruyuki NOMURA