Patents by Inventor Hayato Nakano
Hayato Nakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190254167Abstract: A semiconductor device includes: a sealed unit that seals a semiconductor element therein; a connection terminal that is electrically connected to the semiconductor element and is provided so as to project outward from the sealed unit; and a pedestal that is provided to surround a bottom part of an exposed portion of the connection terminal that is exposed from the sealed unit. The pedestal has a base attached to the sealed unit and a guide part that has an inclined side face.Type: ApplicationFiled: January 7, 2019Publication date: August 15, 2019Applicant: Fuji Electric Co., Ltd.Inventor: Hayato NAKANO
-
Publication number: 20190157221Abstract: A semiconductor module includes: a first lead frame connected to a plurality of semiconductor chips in a first arm circuit; a second lead frame connected to a plurality of semiconductor chips in a second arm circuit; a first main terminal connected to the first lead frame; and a second main terminal connected to the second lead frame, wherein each of the first lead frame and second lead frame has a facing part, a first terminal connection portion connected to the first main terminal is provided at a first end portion of the first lead frame, a second terminal connection portion connected to the second main terminal is provided at a second end portion of the second lead frame, and the first terminal connection portion and second terminal connection portion are arranged on opposite sides when viewed from the facing parts of the first lead frame and second lead frame.Type: ApplicationFiled: January 29, 2019Publication date: May 23, 2019Inventors: Shin SOYANO, Hayato NAKANO, Keiichi HIGUCHI, Akihiro OSAWA
-
Patent number: 10170395Abstract: A semiconductor device including a semiconductor module 10A, a semiconductor module 10B that has a lower switching voltage threshold than the semiconductor module 10A, and busbars 331 and 32 that connect the semiconductor module 10A and the semiconductor module 10B in parallel to a common terminal. The semiconductor module 10B is connected at a connection point on the busbar 32 at which the inductance relative to the common terminal is higher than that of the semiconductor module 10A. The semiconductor module 10B with the low threshold voltage is turned ON faster than the semiconductor module 10A with the high threshold voltage for input of a common switching voltage, but can restrict the rising of the current due to the high inductance of the busbar 32, thereby enabling restriction of the current imbalance.Type: GrantFiled: January 27, 2017Date of Patent: January 1, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hayato Nakano, Hideyo Nakamura
-
Patent number: 10163868Abstract: A semiconductor device includes an insulating substrate having an insulating plate and a circuit plate; a semiconductor chip having a front surface provided with a gate electrode and a source electrode, and a rear surface fixed to the circuit plate; a printed circuit board facing the insulating substrate, and including a first metal layer and a second metal layer; a first conductive post having two ends electrically and mechanically connected to the gate electrode and the first metal layer; a second conductive post having two ends electrically and mechanically connected to the source electrode and the second metal layer; and a circuit impedance reducing element electrically connected between the gate electrode and the source electrode through the first conductive post and the second conductive post.Type: GrantFiled: October 7, 2015Date of Patent: December 25, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Masafumi Horio, Yoshinari Ikeda, Hideyo Nakamura, Hayato Nakano
-
Publication number: 20180174987Abstract: A semiconductor device is provided that includes a semiconductor chip having a main terminal and a control terminal, a main connection pin electrically connected to the main terminal, and a control connection pin electrically connected to the control terminal and having an electrical resistance higher than that of the main connection pin. The control connection pin may be a control internal connection pin or a control external connection pin. The control connection pin may include material having an electrical resistivity higher than that of material of the main connection pin. The control connection pin may have a shape different from that of the main connection pin.Type: ApplicationFiled: October 26, 2017Publication date: June 21, 2018Inventors: Mikiya CHOUNABAYASHI, Ryohei MAKINO, Hayato NAKANO
-
Patent number: 9818852Abstract: In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n? type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 ?m or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm?3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.Type: GrantFiled: March 30, 2016Date of Patent: November 14, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Hidenao Kuribayashi, Yuichi Onozawa, Hayato Nakano, Daisuke Ozaki
-
Patent number: 9812561Abstract: In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n? type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 ?m or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm?3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.Type: GrantFiled: March 15, 2016Date of Patent: November 7, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Hidenao Kuribayashi, Yuichi Onozawa, Hayato Nakano, Daisuke Ozaki
-
Patent number: 9773936Abstract: A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state.Type: GrantFiled: November 16, 2015Date of Patent: September 26, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventor: Hayato Nakano
-
Publication number: 20170263535Abstract: A semiconductor device including a semiconductor module 10A, a semiconductor module 10B that has a lower switching voltage threshold than the semiconductor module 10A, and busbars 331 and 32 that connect the semiconductor module 10A and the semiconductor module 10B in parallel to a common terminal. The semiconductor module 10B is connected at a connection point on the busbar 32 at which the inductance relative to the common terminal is higher than that of the semiconductor module 10A. The semiconductor module 10B with the low threshold voltage is turned ON faster than the semiconductor module 10A with the high threshold voltage for input of a common switching voltage, but can restrict the rising of the current due to the high inductance of the busbar 32, thereby enabling restriction of the current imbalance.Type: ApplicationFiled: January 27, 2017Publication date: September 14, 2017Inventors: Hayato NAKANO, Hideyo NAKAMURA
-
Publication number: 20170077924Abstract: The semiconductor device includes a switching arm unit in which first and second wide bandgap semiconductor elements, each having a body diode, are connected in series between a positive line and a negative line; a current detecting unit that detects a current in at least a wide bandgap semiconductor element in which a flyback current flows; and a semiconductor element driving unit that drives the first and second wide bandgap semiconductor elements. When driving one of the wide bandgap semiconductor elements, the semiconductor element driving unit determines, by referring to a fault inhibiting characteristic curve, whether a flyback current detection value of the other wide bandgap semiconductor elements falls within a fault growth region or a fault inhibiting region, and when a result of the determination indicates that the flyback current detection value is within the fault growth region, inhibits a current flowing in the one wide bandgap semiconductor element.Type: ApplicationFiled: August 9, 2016Publication date: March 16, 2017Applicant: Fuji Electric Co., Ltd.Inventors: Hayato NAKANO, Ryohei TAKAYANAGI
-
Publication number: 20170077068Abstract: A semiconductor device includes an insulating substrate having an insulating plate and a circuit plate; a semiconductor chip having a front surface provided with a gate electrode and a source electrode, and a rear surface fixed to the circuit plate; a printed circuit board facing the insulating substrate, and including a first metal layer and a second metal layer; a first conductive post having two ends electrically and mechanically connected to the gate electrode and the first metal layer; a second conductive post having two ends electrically and mechanically connected to the source electrode and the second metal layer; and a circuit impedance reducing element electrically connected between the gate electrode and the source electrode through the first conductive post and the second conductive post.Type: ApplicationFiled: October 7, 2015Publication date: March 16, 2017Inventors: Masafumi HORIO, Yoshinari IKEDA, Hideyo NAKAMURA, Hayato NAKANO
-
Patent number: 9595958Abstract: The semiconductor device includes a switching arm unit in which first and second wide bandgap semiconductor elements, each having a body diode, are connected in series between a positive line and a negative line; a current detecting unit that detects a current in at least a wide bandgap semiconductor element in which a flyback current flows; and a semiconductor element driving unit that drives the first and second wide bandgap semiconductor elements. When driving one of the wide bandgap semiconductor elements, the semiconductor element driving unit determines, by referring to a fault inhibiting characteristic curve, whether a flyback current detection value of the other wide bandgap semiconductor elements falls within a fault growth region or a fault inhibiting region, and when a result of the determination indicates that the flyback current detection value is within the fault growth region, inhibits a current flowing in the one wide bandgap semiconductor element.Type: GrantFiled: August 9, 2016Date of Patent: March 14, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hayato Nakano, Ryohei Takayanagi
-
Publication number: 20160211356Abstract: In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n? type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 ?m or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm?3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.Type: ApplicationFiled: March 30, 2016Publication date: July 21, 2016Inventors: Takashi YOSHIMURA, Hidenao KURIBAYASHI, Yuichi ONOZAWA, Hayato NAKANO, Daisuke OZAKI
-
Publication number: 20160197170Abstract: In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n? type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20?m or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm?3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.Type: ApplicationFiled: March 15, 2016Publication date: July 7, 2016Inventors: Takashi YOSHIMURA, Hidenao KURIBAYASHI, Yuichi ONOZAWA, Hayato NAKANO, Daisuke OZAKI
-
Patent number: 9324847Abstract: In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n? type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 ?m or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm?3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.Type: GrantFiled: November 13, 2013Date of Patent: April 26, 2016Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Hidenao Kuribayashi, Yuichi Onozawa, Hayato Nakano, Daisuke Ozaki
-
Publication number: 20160071998Abstract: A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state.Type: ApplicationFiled: November 16, 2015Publication date: March 10, 2016Applicant: FUJI ELECTRIC CO., LTD.Inventor: Hayato NAKANO
-
Publication number: 20140070268Abstract: In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n? type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 ?m or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm?3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.Type: ApplicationFiled: November 13, 2013Publication date: March 13, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventors: Takashi YOSHIMURA, Hidenao KURIBAYASHI, Yuichi ONOZAWA, Hayato NAKANO, Daisuke OZAKI
-
Patent number: 7281827Abstract: A vehicle headlight apparatus includes a headlight and an actuator. The actuator horizontally changes a direction of an optical axis of the headlight. The vehicle headlight apparatus detects a rotational state of at least one predetermined wheel. The vehicle headlight apparatus determines whether a vehicle travels in a forward direction or a non-forward direction based on a detection result. A swivel operation, in which the actuator horizontally changes the direction of the optical axis of the headlight based on a steering operation of the vehicle, is performed when the vehicle headlight apparatus determines that the vehicle travels in the forward direction. The swivel operation is cancelled when the vehicle headlight apparatus determines that the vehicle travels in the non-forward direction.Type: GrantFiled: June 13, 2006Date of Patent: October 16, 2007Assignees: Denso Corporation, Kanto Auto Works, Ltd., Toyota Jidosha Kabushiki KaishaInventors: Ryu Mizuno, Hayato Nakano, Haruo Saitoh, Kazuhiko Nakashima
-
Publication number: 20060285342Abstract: A vehicle headlight apparatus includes a headlight and an actuator. The actuator horizontally changes a direction of an optical axis of the headlight. The vehicle headlight apparatus detects a rotational state of at least one predetermined wheel. The vehicle headlight apparatus determines whether a vehicle travels in a forward direction or a non-forward direction based on a detection result. A swivel operation, in which the actuator horizontally changes the direction of the optical axis of the headlight based on a steering operation of the vehicle, is performed when the vehicle headlight apparatus determines that the vehicle travels in the forward direction. The swivel operation is cancelled when the vehicle headlight apparatus determines that the vehicle travels in the non-forward direction.Type: ApplicationFiled: June 13, 2006Publication date: December 21, 2006Applicants: Denso Corporation, Kanto Auto Works, Ltd., Toyota Jidosha Kabushiki KaishaInventors: Ryu Mizuno, Hayato Nakano, Haruo Saitoh, Kazuhiko Nakashima