Abstract: This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.

Abstract: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

Abstract: An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.

Abstract: This charge increaser includes a charge supplying portion having a signal source formed by a measurement object other than visible light and supplying signal charges corresponding to the signal source and a charge increasing portion for increasing the amount of charges corresponding to the signal charges stored in the charge supplying portion by measuring the measurement object other than visible light.

Abstract: This image sensor includes a charge transfer region transferring signal charge, a transfer electrode formed on the surface of the charge transfer region through a first insulating film, an increasing portion provided on the charge transfer region for increasing the signal charge and a transistor, provided on a region other than the charge transfer region, having a second insulating film smaller in thickness than the first insulating film.

Abstract: An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.

Abstract: An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.

Abstract: An imaging device that improves properties for multiplying signal charges. The imaging device includes an accumulation section which accumulates signal charges. A transfer section transfers the signal charges accumulated in the accumulation section. A multiplier section increases the signal charges accumulated in the accumulation section. The transfer section includes a first insulating member arranged on a substrate and a first electrode arranged on the first insulating member. The multiplier section includes a second insulating member arranged on the substrate and a second electrode arranged on the second insulating member. The second insulating member has a thickness which is greater than that of the first insulating member.

Abstract: A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.

Abstract: In an image sensor, a first electrode, a second electrode, a third electrode and a fourth electrode are formed between a photoelectric conversion portion and a voltage conversion portion and are provided so as not to overlap with at least a part of the photoelectric conversion portion in plan view.

Abstract: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

Abstract: An image sensor includes a photoelectric conversion portion generating signal charges, a first electrode for forming an electric field transferring the signal charges generated by the photoelectric conversion portion, formed to be adjacent to the photoelectric conversion portion; and a second electrode for forming an electric field transferring the signal charges, provided on a side opposite to the photoelectric conversion portion with respect to the first electrode and formed to partially extend on the first electrode.

Abstract: This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.

Abstract: A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

Abstract: An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.

Abstract: A solid-state image sensor capable of suppressing generation of cross talk or a dark current and improving transfer efficiency of electrons (signal charge) can be obtained. This solid-state image sensor includes a plurality of pixels and a transfer gate electrode arranged in each of the plurality of pixels. An OFF-state voltage of the transfer gate electrode located on a boundary part between the pixels during an imaging period is lower than an OFF-state voltage of the transfer gate electrode located on the boundary part between the pixels during a transfer period.

Abstract: On a substrate are sequentially formed a first interconnection 203, a diffusion barrier film 205 and a second insulating film 207, and on the upper surface of the second insulating film 207 is then formed a sacrificial film 213. Next, a via hole 211 and an interconnection trench 217 are formed, and on the sacrificial film 213 are then formed a barrier metal film 219 and a copper film 221. CMP for removing the extraneous copper film 221 and barrier metal film 219 are conducted in a two-step process, i. e., the first polishing where polishing is stopped on the surface of the barrier metal film 219 and the second polishing where the remaining barrier metal film 219 and the tapered sacrificial film 213 are polished.

Abstract: A solid-state imaging device capable of suppressing deterioration of the image quality is provided. This solid-state imaging device comprises a substrate provided with a photodetection area, a color filter layer formed above the photodetection area and a lens formed between the substrate and the color filter layer for condensing light on the photodetection area. The lens has a substantially flat upper surface portion, and the ratio (w/t) of the width w of the substantially flat upper surface portion of the lens to the thickness t of the lens is not more than about 0.86.

Abstract: A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

Abstract: On a substrate are sequentially formed a first interconnection 203, a diffusion barrier film 205 and a second insulating film 207, and on the upper surface of the second insulating film 207 is then formed a sacrificial film 213. Next, a via hole 211 and an interconnection trench 217 are formed, and on the sacrificial film 213 are then formed a barrier metal film 219 and a copper film 221. CMP for removing the extraneous copper film 221 and barrier metal film 219 are conducted in a two-step process, i. e., the first polishing where polishing is stopped on the surface of the barrier metal film 219 and the second polishing where the remaining barrier metal film 219 and the tapered sacrificial film 213 are polished.