Patents by Inventor He Chen

He Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240139262
    Abstract: The present disclosure relates to a complex probiotic composition and a method for improving exercise performance of a subject with low intrinsic aerobic exercise capacity. The complex probiotic composition, which includes Lactobacillus rhamnosus GKLC1, Bifidobacterium lactis GKK24 and Clostridium butyricum GKB7, administered to the subject with the low intrinsic aerobic exercise capacity in a continuation period, can effectively reduce serum lactic acid and serum urea nitrogen after aerobic exercise, reduce proportion of offal fat and/or increase liver and muscle glycogen contents, thereby being as an effective ingredient for preparation of various compositions.
    Type: Application
    Filed: October 13, 2023
    Publication date: May 2, 2024
    Inventors: Chin-Chu CHEN, Yen-Lien CHEN, Shih-Wei LIN, Yen-Po CHEN, Ci-Sian WANG, Yu-Hsin HOU, Yang-Tzu SHIH, Ching-Wen LIN, Ya-Jyun CHEN, Jia-Lin JIANG, You-Shan TSAI, Zi-He WU
  • Publication number: 20240131173
    Abstract: Transcription factors (TFs) represent a major class of therapeutic targets for the treatment of human diseases including cancer. Although the biological function and even crystal structure of many TFs have been clearly elucidated, there is still no viable approach to target the majority of TFs, thus rendering them undruggable for decades. PROTACs (PROteolysis TArgeting Chimeras) have emerged as a powerful tool for the pharmaceutical development since the effect of PROTACs largely relies on engineered protein-protein interaction to aid the degradation of targets by the ubiquitin-proteasome system (UPS). The present disclosure provides a DNA-PROTAC platform for targeted degraders of individual TFs of interest. These DNA based Transcription Factor targetting PROTACS (or “TF-PROTACS”) may provide specificity to TF degradation based on the conserved DNA-binding motifs of respective TFs.
    Type: Application
    Filed: November 27, 2023
    Publication date: April 25, 2024
    Applicants: Beth Israel Deaconess Medical Center, Inc., Icahn School of Medicine at Mount Sinai
    Inventors: Wenyi WEI, Jian JIN, Jing LIU, He CHEN, Husnu Ümit KANISKAN
  • Publication number: 20240136149
    Abstract: The present invention relates to a method for manipulating a tiny object, including: providing a charged particle beam; forming a non-uniform charge distribution in a fluid medium; and applying, to a tiny object, a gradient force formed by the non-uniform charge distribution. The present invention extends manipulation to a nanoscale, and can be applied to various microscopic tiny objects such as conductors, non-conductors, and living or non-living biological cells or organelles, and therefore surely promote great progress in the fields of physics, chemistry, biology and medicine.
    Type: Application
    Filed: February 28, 2021
    Publication date: April 25, 2024
    Inventors: He TIAN, Tulai SUN, Tianxing REN, Wanru ZHANG, Xinkai CHEN, Ze ZHANG
  • Patent number: 11959609
    Abstract: A lens unit, a lens for a low-beam illumination module, a low-beam illumination module and a vehicle. The lens unit includes a rear surface and a front surface; the lens unit has a focal line, and the focal line is a straight line perpendicular to a light emitting direction of the lens unit; the rear surface and the front surface are adapted to project light rays passing through the focal line into parallel light rays, and the front surface is a free-form curved surface. The lens unit has the optical characteristics of a cylindrical lens, and is able to cause parallel incident light to be focused into a line instead of a focal point upon passing through the lens unit.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: April 16, 2024
    Assignee: HASCO VISION TECHNOLOGY CO., LTD.
    Inventors: Xiangqian Chen, Zhaoyu Chen, Guomin Xu, Tao Zhang, Ying Li, He Zhu, Wenhui Sang
  • Patent number: 11955382
    Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: April 9, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Kashefi, Alexander Jansen, Mehul Naik, He Ren, Lu Chen, Feng Chen
  • Patent number: 11956958
    Abstract: Methods for forming a semiconductor device are disclosed. According to some aspects, a first implantation is performed on a first of a first semiconductor structure to form a buried stop layer in the first substrate. A second semiconductor device is formed. The first semiconductor structure and the second semiconductor device are bonded. The first substrate is thinned and the buried stop layer is removed, and an interconnect layer is formed above the thinned first substrate.
    Type: Grant
    Filed: April 22, 2021
    Date of Patent: April 9, 2024
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventor: He Chen
  • Patent number: 11935664
    Abstract: A dynamic characteristic analysis method of DET and RELAP5 coupling based on a universal instrumental variable method includes steps of: constructing a DET simulation model of a discrete dynamic event tree and modifying TRIP cards of an input file by adding universal instrumental TRIP variables according to state transition types of DET simulation objects, the universal instrumental TRIP variable being variable type or logical type; setting a simulation time of the RELAP5, controlling a simulation step, and analyzing an output result file of each simulation step of the RELAP5; backtracking the RELAP5 according to state transition types of DET simulation objects. The dynamic characteristic analysis method has advantages of simplifying TRIP setting process and method of DET state transition objects in an input file of the RELAP5 required for the coupling of DET and RELAP5, reducing a modeling complexity and improving a modeling efficiency.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: March 19, 2024
    Assignee: HARBIN ENGINEERING UNIVERSITY
    Inventors: He Wang, Liangjun Wang, Dabin Sun, Haoyin Chen, Genglei Xia, Lei Li
  • Patent number: 11935217
    Abstract: The present disclosure relates to systems, methods, and non-transitory computer readable media for accurately, efficiently, and flexibly generating harmonized digital images utilizing a self-supervised image harmonization neural network. In particular, the disclosed systems can implement, and learn parameters for, a self-supervised image harmonization neural network to extract content from one digital image (disentangled from its appearance) and appearance from another from another digital image (disentangled from its content). For example, the disclosed systems can utilize a dual data augmentation method to generate diverse triplets for parameter learning (including input digital images, reference digital images, and pseudo ground truth digital images), via cropping a digital image with perturbations using three-dimensional color lookup tables (“LUTs”).
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: March 19, 2024
    Assignee: Adobe Inc.
    Inventors: He Zhang, Yifan Jiang, Yilin Wang, Jianming Zhang, Kalyan Sunkavalli, Sarah Kong, Su Chen, Sohrab Amirghodsi, Zhe Lin
  • Publication number: 20240088284
    Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Chia-Ling YEH, Pravanshu MOHANTA, Ching-Yu CHEN, Jiang-He XIE, Yu-Shine LIN
  • Patent number: 11930008
    Abstract: Example subscription information configuration methods and a communications device are described. One example method includes receiving a first device identifier by a network device from a first terminal device in a first access mode and receiving a second device identifier from a second terminal device in a second access mode. The network device determines whether the first device identifier matches the second device identifier to identify legality of the first terminal device. If the first device identifier matches the second device identifier, it indicates that the first terminal device is a legal terminal device. The network device sends subscription information of the first terminal device to the first terminal device in the first access mode, so that the first terminal device successfully accesses a network by using the subscription information.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: March 12, 2024
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Li Hu, Weisheng Jin, Jing Chen, He Li
  • Publication number: 20240077105
    Abstract: A ball bearing includes an inner ring (1), an outer ring (2), and a ball (3). The inner ring (1) has an inner ring groove curvature radius Ri. The outer ring (2) has an outer ring groove curvature radius Re. The ball (3) has a ball diameter Dw. The ratio of the outer ring groove curvature radius Re to the ball diameter Dw satisfies: Re/Dw?0.5275; and/or the ratio of inner ring groove curvature radius Ri to the ball diameter Dw satisfies: 0.5175?Ri/Dw?0.55. The ball bearing may be accommodated in a housing, thereby forming a ball bearing assembly.
    Type: Application
    Filed: August 29, 2023
    Publication date: March 7, 2024
    Inventors: Hongyuan AN, Yafen Chen, He Zhu, Xiaoyun Ni
  • Publication number: 20240079486
    Abstract: A semiconductor structure includes a barrier layer over a channel layer, and a doped layer over the barrier layer. A gate electrode is over the doped layer and a doped interface layer is formed between the barrier layer and the doped layer. The doped interface layer includes a dopant and a metal. The metal has a metal concentration that follows a gradient function from a highest metal concentration to a lowest metal concentration.
    Type: Application
    Filed: March 27, 2023
    Publication date: March 7, 2024
    Inventors: Wei-Ting CHANG, Ching Yu CHEN, Jiang-He XIE
  • Patent number: 11920056
    Abstract: A surface covering is provided. The surface covering includes a laminated panel and an ultra-violet (UV) curable surface coating applied to the laminated panel. The ultra-violet (UV) curable surface coating includes a first coating, a second coating, abrasive resistant particles, and an antimicrobial additive. The second coating is a composition distinctive of the first coating, the first coating is cured at a lower energy than the second coating, the second coating is cured at a higher energy to cure both the first coating and the second coating. The abrasive resistant particles include silicon carbide (SiC) particles wherein at least 50% of the silicon carbide (SiC) particles have a particle size of less than 45 ?u. The antimicrobial additive selected from a group consisting of N-butyl-1,2-benzisothiazolin-3-one, alkyl dimethyl ammonium saccharinates, Zinc 2-pyridinethiol-1-oxide,10,10?-Oxybisphenoxarsine (OBPA), 4,5-Dichloro-2-octyl-4isothiazolin-3-one (DCOIT) and mixtures thereof.
    Type: Grant
    Filed: March 10, 2023
    Date of Patent: March 5, 2024
    Assignee: Decoria Materials (Jiangsu) Co., Ltd.
    Inventors: Hao Allen Chen, Kun He, Shangfei Sun
  • Patent number: 11920755
    Abstract: An automotive headlamp system and an automotive lamp. The automotive headlamp system comprises a light source, a primary optical element, an automotive signal lamp structure, and a secondary optical element arranged sequentially along the light emitting direction. The automotive signal lamp structure comprises a light-transmitting portion and a rotating shaft. The light-transmitting portion comprises at least one light-transmitting plate mounted on the rotating shaft which can be driven to rotate by the rotating shaft. By means of rotation, light from the light source exits from the primary optical element, then selectively passes through one of or none of the light-transmitting plates, and is then projected by means of the secondary optical element to achieve a corresponding signal lamp function. The light-transmitting plate mounted on the rotating shaft is used to replace an existing signal lamp, reducing the space occupied by the original signal lamp, decreasing the volume of a headlamp.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: March 5, 2024
    Assignee: HASCO VISION TECHNOLOGY CO., LTD.
    Inventors: Meng Li, Zhaoyu Chen, Ying Li, Xiangqian Chen, He Zhu, Wenhui Sang
  • Patent number: 11919603
    Abstract: A straddle-type vehicle (100) includes a frame (20) and an engine (10) mounted on the frame (20), the engine (10) includes a cylinder head (11) positioned toward the rear end of the frame, and located below a saddle seat (80). The cylinder head laces toward the rear end of the frame, which allows the heated cylinder head of the engine and the exhaust pipe connected to the cylinder head to avoid contact with the vehicle the user's legs while riding the vehicle, so the effect of heat emitted from the cylinder head on the rider's experience is reduced.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: March 5, 2024
    Assignee: Zhejiang CFMoto Power Co. Ltd.
    Inventors: Qianjin Li, Zhiyong Chen, An He, Ying Fang
  • Publication number: 20240049455
    Abstract: A semiconductor device includes an array of memory cells, bit lines coupled to the memory cells, and first air gaps. Each of the memory cells includes a vertical transistor. The vertical transistor includes a semiconductor body extends in a first direction. Each of the bit lines is electrically connected to a first end of the semiconductor body. At least one of the first air gaps is between adjacent bit lines.
    Type: Application
    Filed: July 24, 2023
    Publication date: February 8, 2024
    Inventors: Mingliang Xu, He Chen, Wei Liu
  • Publication number: 20240043328
    Abstract: Disclosed are a reusable freely-shapable eco-friendly recycled brick manufacturing process and its product. The manufacturing process includes the steps of: (S1): preparing a raw material of a calcium silicate board; (S2): preparing a raw material of a gypsum board, mixing it with the raw material of the calcium silicate board obtained in (S1) and crushing them into fine powder; (S3): preparing a raw cement and mix it with the fine powder obtained in (S2); (S4): preparing raw water and mix it with the mixture obtained in (S3); (S5): preparing an enhancer and mix it with the mixture obtained in (S4), wherein the enhancer includes little surfactant and adhesive; (S): uniformly mix the raw materials prepared according to the eco-friendly recycled brick manufacturing process and their proportion, and pouring them into at least one mold; and (S7): forming the eco-friendly recycled brick product.
    Type: Application
    Filed: July 31, 2023
    Publication date: February 8, 2024
    Inventors: Jhong-He CHEN, Bo-Heng CHEN, Li-Ying CHEN
  • Publication number: 20230386985
    Abstract: A semiconductor structure includes a solder resist layer disposed on a circuit substrate and partially covering contact pads of the circuit substrate, and external terminals disposed on the solder resist layer and extending through the solder resist layer to land on the contact pads. The external terminals include a first external terminal and a second external terminal which have different heights. A first interface between the first external terminal and corresponding one of the contact pads underlying the first external terminal is less than a second interface between the second external terminal and another corresponding one of the contact pads underlying the second external terminal.
    Type: Application
    Filed: July 26, 2023
    Publication date: November 30, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Yu Yeh, Cing-He Chen, Kuo-Chiang Ting, Weiming Chris Chen, Chia-Hao Hsu, Kuan-Yu Huang, Shu-Chia Hsu
  • Patent number: 11829715
    Abstract: The present invention provides text-based news significance evaluation methods, apparatuses, and electronic devices for improving efficiency and accuracy of news significance evaluation, and implementing real-time dynamic evaluation on text news. The method comprises: reading text news; preprocessing the text news to obtain original data; extracting feature values from the original data, which comprises metadata, a keyword, and a probability model feature value; and obtaining a score of each feature value according to a weight ratio corresponding to each feature value. The apparatus comprises: a text news reading module, a text news preprocessing module, a feature value extraction module, a feature value weight determining module, and a text news significance evaluation module. The electronic device comprises a memory and a processor. The memory stores a computer program that can run on the processor.
    Type: Grant
    Filed: January 10, 2021
    Date of Patent: November 28, 2023
    Assignee: Business Management Advisory LLC
    Inventors: Qingquan Zhang, Wenxi Lu, He Chen, Ying Wu
  • Publication number: 20230380142
    Abstract: A three-dimensional (3D) memory device and a fabricating method thereof are disclosed. The 3D memory device can comprise an array of memory cells. Each memory cell can comprise a capacitor and a vertical transistor. The vertical transistor can comprise a semiconductor body extending in a vertical direction and in contact with the capacitor, and a three-sided gate structure surrounding the semiconductor body from three lateral directions. The 3D memory device can further comprise a memory controller configured to control the array of memory cells.
    Type: Application
    Filed: May 16, 2023
    Publication date: November 23, 2023
    Inventors: He Chen, Ziqun Hua, Yanhong Wang, Wei Liu