Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: Provided are adoptive cell therapy methods involving the administration of doses of cells for treating disease and conditions, including certain B cell malignancies. The cells generally express recombinant receptors such as chimeric antigen receptors (CARs). In some embodiments, the methods are for treating subjects with non-Hodgkin lymphoma (NHL). In some embodiments, the methods are for treating subjects with relapsed or refractory NHL. Also provided are articles of manufacture and prophylactic treatments in connection with adoptive therapy methods.

Abstract: A memory device includes a first transistor, a second transistor and a third transistor. The first transistor is coupled to a first word line at a first node. The second transistor is coupled to a second word line different from the first word line at a second node. A control terminal of the first transistor is coupled to a control terminal of the second transistor. The third transistor is coupled between a ground and a third node which is coupled to each of the first node and the second node. In a layout view, each of the first transistor and the second transistor has a first length along a direction. The first transistor, the third transistor and second transistor are arranged in order along the direction. A method is also disclosed herein.

Abstract: A memory device includes a first memory array, a first isolation cell abutting a first side of the first memory array, a first edge cell array abutting a second side, opposite to the first side, of the first memory array, a second memory array arranged at a first side, opposite to the first memory array, of the first isolation cell, a second edge cell array, and multiple first word lines passing through the first edge cell array, the first memory array and being terminated at the first isolation cell. A first width of the first isolation cell is different from a second width of the first edge cell array. The second memory array is sandwiched between the second edge cell array and the first isolation cell.

Abstract: A circuit includes a power management circuit configured to receive at least a first or a second control signal, and to supply at least a first, second or a third supply voltage. The first control signal has a first voltage swing. The second control signal has a second voltage swing. The power management circuit includes a first level shifter circuit configured to generate a first level shifted signal in response to the first control signal, and a first header circuit coupled to at least the first level shifter circuit, a first voltage supply and a second voltage supply. The first header circuit is configured to supply the first supply voltage of the first voltage supply to the first node in response to the first control signal, and to supply the second supply voltage of the second voltage supply to the second node in response to the first level shifted signal.

Abstract: The memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines. Circuitry is configured to program at least some of the plurality of memory cells in a program loop or that is configured to erase at least some of the plurality of memory cells in an erase loop. During the program loop or the erase loop, the circuitry is configured to perform a verify operation and an analog bitscan operation. In the analog bitscan operation, the circuitry counts the memory cells that pass or that fail the verify operation. The circuitry is also configured to determine an output of the analog bitscan operation, the output being one of at least three options.

Abstract: The invention discloses an application of a thermosensitive heteropolysaccharide polymer in enhancing oil recovery. The Sphingomonas sanxanigenens is Sphingomonas sanxanigenens HL-1. The thermosensitive heteropolysaccharide polymer is used for biopolymer flooding in medium and high temperature reservoirs under the condition of ?70° C. in the form of fermentation broth or biopolymer solution; or is used for profile control and water plugging of high temperature reservoirs under the condition of ?85° C. The thermosensitive heteropolysaccharide polymer provided in the present invention has a shear thinning property, is in a solid-like state, and features high viscosity, strong deformation resistance and thermally irreversible formation of solid gel at a high temperature and the degree of intermolecular entanglement is related to concentration. The thermosensitive heteropolysaccharide polymer possesses the excellent properties of xanthan gum and curdlan gum and has a wider scope of application in oil recovery.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A memory device includes a memory array, a first latch and a first logic element. The memory array is configured to operate according to a first global write signal. The first latch is configured to generate a first latch write data based on a clock signal. The first logic element is configured to generate the first global write signal based on the clock signal and the first latch write data.

Abstract: Method and apparatus for delay states having variable configurations. The apparatus transmits, to a network entity, a delay status report indicating an uplink delay detected by the UE, wherein the uplink delay is greater than a first threshold. The apparatus switches, subsequent to transmitting the delay status report, from a first state configuration to a second state configuration that is different than the first state configuration for transmission of uplink data before a delay budget is exceeded. The second state configuration is a delay critical state and comprises a set of configurations for the transmission of the uplink data. The apparatus communicates, with the network entity, based on the second state configuration.

Abstract: An iron core-annular array multi-ring magnetosensitive current sensor and a current measurement method, the method comprising: using a first loop structure (101) to acquire a feedback current signal generated according to a first magnetic field signal generated by a primary side current; using a second loop structure (102) to measure a second magnetic field signal generated by the current of a wire in a coil; and using a digital processing unit (103) to calculate, according to the feedback current signal and the second magnetic field signal, the feature quantity that characterizes the current of the wire, and determining the current on the wire according to the feature quantity that characterizes the current of the wire.

Abstract: Methods and apparatus for etching high aspect ratio features in substrates having mixed material stacks are provided herein. Methods involve using low plasma power, high chamber pressure, and/or low temperature while exposing the substrate to a metal-containing additive gas during etching using a fluorocarbon gas.

Abstract: Provided are a backlight control method and system, a display device and a readable storage medium. The backlight control method includes: obtaining a backlight control signal, where the backlight control signal includes a mode signal and a data signal (21); obtaining the mode signal in the backlight control signal, where the mode signal includes a phase adjustment signal or a local dimming signal (22); in response to that the mode signal is the phase adjustment signal, writing the data signal corresponding to the mode signal into a light source drive module, such that the light source drive module adjusts a phase of a backlight source based on the data signal (23). By adding the phase adjustment signal to the backlight control signal, a backlight refresh phase may be directly adjusted by a front end device, without adding hardware, bringing conveniences and speediness.

Abstract: Provided herein are methods and articles of manufacture for use with cell therapy for the treatment of diseases or conditions, e.g., cancer, including for predicting and treating a toxicity. In some embodiments, the toxicity is related to cytokine release syndrome (CRS). The methods generally involve assessing a change in a factor indicative of tumor burden in a subject that is associated with and/or correlate to a risk of developing toxicity. In some aspects, the methods can be used to determine if the subject is at risk or likely at risk for developing a toxicity following administration of the cell therapy. Also provided are methods for treating a subject having a disease or condition, in some cases involving administration of the cell therapy, based on assessment of risk of developing a toxicity following administration of the therapy. Also provided herein are reagents and kits for performing the methods.

Abstract: Provided herein are methods, compositions and articles of manufacture for use in connection with cell therapy involving the administration of one or more doses of a therapeutic T cell composition. The cells of the T cell composition express recombinant receptors such as chimeric receptors, e.g. chimeric antigen receptors (CARs) or other transgenic receptors such as T cell receptors (TCRs). Features of the provided embodiments, including the numbers of cells or units of cells administered and/or the potency of administered cells, provide various advantages, such as lower risk of toxicity in subjects administered the T cell compositions.

Abstract: A rivet with improved structure for forming flat-bottom riveting of plates, which comprises a rivet cover, a rivet shoulder and a rivet body; specifically, the rivet cover is provided with a torque transmission structure and a positioning structure for driving the rivet to rotate; the rivet body comprises an inner cavity of the rivet body, an outer wall of the rivet body and an end of the rivet body; with the present invention, the bottom surface of the joint can be flush with the surface of the connected plates, which facilitates the subsequent processing of the coverage on the bottom surface, reduces the wind resistance coefficient of the joint, and broadens the application range of the process.

Abstract: Methods, systems, and devices for multiple transmission schemes in wireless communication are described. In one aspect, a wireless communication method is disclosed to include: transmitting, by a first communication device, at least one of i) a repetition mode of data transmissions to be sent to a second communication device, ii) a mapping between N indicated beams and all scheduled transmissions of the data, or iii) a RV (Redundant Version) relationship among the all scheduled transmissions of the data, wherein the transmitting is based on at least one of the N indicated beam(s), a DMRS (Demodulation Reference Signals) port indication, or K time domain occasions, N and K being non-negative integers.

Abstract: This Application sets forth techniques for provisioning and activating an electronic subscriber identity module (eSIM) as a primary SIM for a mobile wireless device that includes a limited functionality physical SIM (pSIM) associated with a particular mobile network operator (MNO) and installed in the mobile wireless device at a time of manufacture. An eSIM associated with the particular MNO is reserved during a sales order process and later activated during device activation after receipt by a user using a secure over-the-air (OTA) cellular connection enabled by the limited functionality pSIM, when a non-cellular connection or other Internet accessible connection is available. Dual SIM device configuration processes can be suppressed during activation of the eSIM. After successful attachment of the mobile wireless device to a cellular wireless network of the particular MNO using credentials of the eSIM, the limited functionality pSIM is disabled.

Abstract: An advantageous morphic form of Compound 1 which is also known as CFT7455 and is (S)-3-(6-(4-(morpholinomethyl)benzyl)-2-oxobenzo[cd]indol-1(2H)-yl)piperidine-2,6-dione and methods to prepare Compound 1 for therapeutic applications are provided. This invention also provides new dosage regimens for administering Compound 1.

Abstract: Disclosed is a computer-implemented method for sequence design, including: obtaining a candidate target sequence set that translates into a source sequence, based on the source sequence; and searching in the candidate target sequence set for a desired target sequence having a sequence structure that minimizes an objective function. The objective function comprises a minimum free energy (MFE) of a candidate target sequence and an additive regularization term.