Abstract: A semiconductor device includes a substrate, a plurality of planar transistors, a fin-type field effect transistor and a first nonactive structure. The substrate includes a first region and a second region. The first region includes a plurality of first planar active regions and a nonactive region. The nonactive region is located between or aside the plurality of first planar active regions and includes a second planar active region. The second region has a fin active region. The plurality of planar transistors are located in the plurality of first planar active regions within the first region. The fin-type field effect transistor is located on the fin active region within the second region. The first nonactive structure is located in the nonactive region between the plurality of planar transistors.

Abstract: A semiconductor device includes a substrate, a plurality of planar transistors, a fin-type field effect transistor and a first nonactive structure. The substrate includes a first region and a second region. The first region includes a plurality of first planar active regions and a nonactive region. The nonactive region is located between or aside the plurality of first planar active regions and includes a second planar active region. The second region has a fin active region. The plurality of planar transistors are located in the plurality of first planar active regions within the first region. The fin-type field effect transistor is located on the fin active region within the second region. The first nonactive structure is located in the nonactive region between the plurality of planar transistors.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a high-voltage (HV) region and a medium-voltage (MV) region, forming a first trench on the HV region, forming a second trench adjacent to the first trench and extending the first trench to form a third trench, forming a first shallow trench isolation (STI) in the second trench and a second STI in the third trench, and then forming a first gate structure between the first STI and the second STI. Preferably, a bottom surface of the second STI is lower than a bottom surface of the first STI.

Abstract: The invention describes a system for testing antenna-in-package (AiP) modules and a method for using the same. Firstly, AiP modules respectively receive RF signals from a testing transmitting antenna. Then, at least one of the power and the phase of each of the RF signals is adjusted to generate modulated RF amplified signals as recognition tags with difference. The RF amplified signals are received from each control integrated circuit (IC) and the power of the modulated RF amplified signals is summed to generate a net mixed test signal. Finally, the test signal is received and RF properties corresponding to at least one of the power and the phase of each of the RF amplified signals as recognition tags are obtained. The method can simultaneously test a plurality of AiP modules to shorten the test time.

Abstract: A device for testing a group of radio-frequency (RF) chip modules and a method for using the same is disclosed. The device includes a signal analyzer, a power divider, control ICs, a signal controller, and a power combiner. The power divider receives an RF signal and transmits RF input signals to the RF chip modules and the control ICs in response to the RF signal. The signal controller controls each control IC to adjust at least one of the power and the phase of the corresponding RF input signal, thereby generating an RF output signal. The power combiner receives the RF output signal from each control IC to generate a test signal. The signal analyzer receives the test signal and obtains RF properties corresponding to at least one of the power and the phase of each RF output signal.

Abstract: A photo detector includes a superlattice with an undoped first semiconductor layer including undoped intrinsic semiconductor material, a doped second semiconductor layer having a first conductivity type on the first semiconductor layer, an undoped third semiconductor layer including undoped intrinsic semiconductor material on the second semiconductor layer, and a fourth semiconductor layer having a second opposite conductivity type on the third semiconductor layer, along with a first contact having the first conductivity type in the first, second, third, and fourth semiconductor layers, and a second contact having the second conductivity type and spaced apart from the first contact in the first, second, third, and fourth semiconductor layers. An optical shield on a second shielded portion of a top surface of the fourth semiconductor layer establishes electron and hole lakes.

Abstract: A semiconductor device testing system, with a platform for supporting a semiconductor substrate, a light emitting system directed toward the platform, a controller, coupled to the light emitting system and adapted to selectively alter an operational parameter of the light emitting system, and a tester configured to characterize an electrical parameter of an electrical device formed in or over the semiconductor substrate while the electrical device is illuminated by one or more wavelengths of light emitted by the light emitting system under direction of the controller.

Abstract: A semiconductor device includes a semiconductor substrate, an isolation feature, gate lines, and a first gate structure. The isolation feature is over the semiconductor substrate and surrounding an active region of the semiconductor substrate. The gate lines extend across the active region of the semiconductor substrate. The first gate structure is over the isolation feature. The first gate structure comprises a first gate line, a second gate line, and a first bridge portion, the first and second gate lines are substantially parallel with the gate lines, and the first bridge portion connects the first gate line to the second gate line.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A semiconductor device includes a substrate, a plurality of planar transistors, a fin-type field effect transistor and a first nonactive structure. The substrate includes a first region and a second region. The first region includes a plurality of first planar active regions and a nonactive region. The nonactive region is located between or aside the plurality of first planar active regions and includes a second planar active region. The second region has a fin active region. The plurality of planar transistors are located in the plurality of first planar active regions within the first region. The fin-type field effect transistor is located on the fin active region within the second region. The first nonactive structure is located in the nonactive region between the plurality of planar transistors.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A device for testing a group of radio-frequency (RF) chip modules and a method for using the same is disclosed. The device includes a signal analyzer, a power divider, control ICs, a signal controller, and a power combiner. The power divider receives an RF signal and transmits RF input signals to the RF chip modules and the control ICs in response to the RF signal. The signal controller controls each control IC to adjust at least one of the power and the phase of the corresponding RF input signal, thereby generating an RF output signal. The power combiner receives the RF output signal from each control IC to generate a test signal. The signal analyzer receives the test signal and obtains RF properties corresponding to at least one of the power and the phase of each RF output signal.

Abstract: A system for testing antenna-in-package (AiP) modules and a method for using the same is disclosed. Firstly, AiP modules respectively receive RF signals from a testing transmitting antenna. Then, at least one of the power and the phase of each of the RF signals is adjusted to generate modulated RF amplified signals as recognition tags with difference. The RF amplified signals are received from each control integrated circuit (IC) and the power of the modulated RF amplified signals is summed to generate a net mixed test signal. Finally, the test signal is received and RF properties corresponding to at least one of the power and the phase of each of the RF amplified signals as recognition tags are obtained. The method can simultaneously test a plurality of AiP modules to shorten the test time.

Abstract: An antenna measurement system includes an array of antennas, an array of reflectors, and a measurement surface. The array of antennas includes a plurality of antenna elements arranged in a straight line; any two adjacent antenna elements in the above antenna elements are separated by a predetermined distance, and each of the antenna elements in the above antenna elements has a radiator and a feed point. The array of reflectors includes at least one reflector and is arranged in a width direction or a height direction, and the array of reflectors is configured to generate a reflection signal according to a signal sent by the array of antennas. An antenna to be measured is configured to perform a measurement operation on the reflection signal on the measurement surface.

Abstract: An antenna measurement system includes an array of antennas, an array of reflection discs, and a measurement surface. The array of antennas includes a plurality of antenna elements arranged in a straight line; any two adjacent antenna elements in the above antenna elements are separated by a predetermined distance, and each of the antenna elements in the above antenna elements has a radiator and a feed point. The array of reflection discs includes at least one reflection disc and is arranged in a width direction or a height direction, and the array of reflection discs is configured to generate a reflection signal according to a signal sent by the array of antennas. An antenna to be measured is configured to perform a measurement operation on the reflection signal on the measurement surface.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A hotspot detection system that classifies a set of hotspot training data into a plurality of hotspot clusters according to their topologies, where the hotspot clusters are associated with different hotspot topologies, and classifies a set of non-hotspot training data into a plurality of non-hotspot clusters according to their topologies, where the non-hotspot clusters are associated with different topologies. The system extracts topological and non-topological critical features from the hotspot clusters and centroids of the non-hotspot clusters. The system also creates a plurality of kernels configured to identify hotspots, where each kernel is constructed using the extracted critical features of the non-hotspot clusters and the extracted critical features from one of the hotspot clusters, and each kernel is configured to identify hotspot topologies different from hotspot topologies that the other kernels are configured to identify.

Abstract: An intelligent portable medical instrument has an information processing unit and a data storage unit which are connected to a measurement and human body data collection unit. The measurement and human body data collection unit measures electrical, chemical, and acoustic data and sends the data to the information processing unit. The information processing unit compares the measured human physiological index data with the standard ranges of values and makes a preliminary health diagnosis opinion. The preliminary health diagnosis opinion and the measured data are transmitted to an in vitro unit which preferably uploads the information to a cloud server. The in vivo portion of the intelligent portable medical instrument is provided by a single integrated circuit.

Abstract: A system for providing a gaming trend display at a gaming table comprising a processing device, memory and a display device for displaying historical Baccarat game outcomes in one or more predefined formats stored in memory, the systems and methods comprising a data communication device for detecting a new game outcome, the processing device converting the new game outcome for display in the one or more predefined formats on the display device and responsive to updating the display device with the new game outcome, activating the display of an illustrative game outcome in the one or more predefined formats, wherein the illustrative game outcome has the display characteristics of being visually distinguishable from the historical game outcomes, and wherein the illustrative game outcome display is deactivated responsive to receiving a new game outcome detected by the data communication device.