Abstract: A circuit includes a selection circuit configured to receive a first address at a first input and a second address at a second input, pass the first address to an output when a select signal has a first logical state, and pass the second address to the output when the select signal has a second logical state different from the first logical state. The circuit also includes a decoder configured to decode the passed first address or second address.

Abstract: A circuit includes a selection circuit configured to receive a first address at a first input and a second address at a second input, pass the first address to an output when a select signal has a first logical state, and pass the second address to the output when the select signal has a second logical state different from the first logical state. The circuit also includes a decoder configured to decode the passed first address or second address.

Abstract: A method includes delaying an input voltage signal to generate an output voltage, enabling a capacitor unit to apply across a word line driver a boosted voltage greater than the output voltage, and enabling the word line driver to provide a driving voltage that corresponds to the boosted voltage. A word line driving unit that performs the method and a memory device that includes the word line driving unit are also disclosed.

Abstract: A method includes delaying an input voltage signal to generate an output voltage, enabling a capacitor unit to apply across a word line driver a boosted voltage greater than the output voltage, and enabling the word line driver to provide a driving voltage that corresponds to the boosted voltage. A word line driving unit that performs the method and a memory device that includes the word line driving unit are also disclosed.

Abstract: In some embodiments, a circuit comprises a plurality of memory banks, a column line tracking loop and/or a row line tracking loop, and a tracking circuit. The plurality of memory banks are arranged in a plurality of rows and a plurality of columns of memory building blocks. The column line tracking loop traverses at least a portion of the plurality of rows. The row line tracking loop traverses at least a portion of the plurality of columns. The tracking circuit is configured to receive a first edge of a first signal, cause the first edge of a first signal to be propagated through the column line tracking loop and/or through the row line tracking loop and cause a second edge of the first signal when receiving the propagated first edge of the first signal. The first signal is associated with accessing of the plurality of memory banks.

Abstract: In some embodiments, a circuit comprises a plurality of memory banks, a column line tracking loop and/or a row line tracking loop, and a tracking circuit. The plurality of memory banks are arranged in a plurality of rows and a plurality of columns of memory building blocks. The column line tracking loop traverses at least a portion of the plurality of rows. The row line tracking loop traverses at least a portion of the plurality of columns. The tracking circuit is configured to receive a first edge of a first signal, cause the first edge of a first signal to be propagated through the column line tracking loop and/or through the row line tracking loop and cause a second edge of the first signal when receiving the propagated first edge of the first signal. The first signal is associated with accessing of the plurality of memory banks.

Abstract: In some embodiments, a time division multiplexing (TDM) circuit is configured to receive an external clock signal and generate an internal clock signal that has at least one pulse during a clock cycle of the external clock signal. An address selector is configured to select a current address before a first time within one of the at least one pulse, and select a next address starting from the first time to generate a selected address. An address storage element is configured to receive the selected address from the address selector and provide a passed through or stored address. The provided address is the current address substantially throughout the one of the at least one pulse. A single-port (SP) memory is configured to access at least one SP memory cell at the address provided by the address storage element in response to the internal clock signal.

Abstract: In some embodiments, a time division multiplexing (TDM) circuit is configured to receive an external clock signal and generate an internal clock signal that has at least one pulse during a clock cycle of the external clock signal. An address selector is configured to select a current address before a first time within one of the at least one pulse, and select a next address starting from the first time to generate a selected address. An address storage element is configured to receive the selected address from the address selector and provide a passed through or stored address. The provided address is the current address substantially throughout the one of the at least one pulse. A single-port (SP) memory is configured to access at least one SP memory cell at the address provided by the address storage element in response to the internal clock signal.

Abstract: A boost system for dual-port SRAM includes a comparator and a boost circuit. The comparator is configured to compare a first row address of a first port and a second row address of a second port, and output a first enable signal. The boost circuit is configured to boost a voltage difference between a first voltage source and a second voltage source according to the first enable signal.

Abstract: A boost system for dual-port SRAM includes a comparator and a boost circuit. The comparator is configured to compare a first row address of a first port and a second row address of a second port, and output a first enable signal. The boost circuit is configured to boost a voltage difference between a first voltage source and a second voltage source according to the first enable signal.

Abstract: Methods and apparatus for the encoding of an input sequence of digit data into a sequence of storage cells of a ROM device are disclosed. The input sequence is divided into a first kind of groups and a second kind of groups. A first kind of group comprises a plurality of consecutive first digits, two first kind of groups are separated by a second kind of group, the second kind of group comprises consecutive digits without any consecutive first digits, and the second kind of group has a starting digit which is the second digit. A starting storage cell is programmed to the active state to store the starting digit of the second kind of group. The rest digits of the second kind of group are programmed one digit at a time, based on a shared terminal which has been programmed for the proceeding storage cell.

Abstract: Methods and apparatus for the encoding of an input sequence of digit data into a sequence of storage cells of a ROM device are disclosed. The input sequence is divided into a first kind of groups and a second kind of groups. A first kind of group comprises a plurality of consecutive first digits, two first kind of groups are separated by a second kind of group, the second kind of group comprises consecutive digits without any consecutive first digits, and the second kind of group has a starting digit which is the second digit. A starting storage cell is programmed to the active state to store the starting digit of the second kind of group. The rest digits of the second kind of group are programmed one digit at a time, based on a shared terminal which has been programmed for the proceeding storage cell.

Abstract: A read only memory (ROM) and an operating method thereof are provided. The read only memory includes: a control circuit, powered by a first power source for outputting a control signal within a first voltage range; a voltage shifter, for expanding the amplitude of the control signal to a second voltage range; a word line driver, powered by a second power source with a voltage which is higher than that of the first power source, for driving one of a plurality of word lines of a read only memory cell array according to the control signal which is expanded to be within the second voltage range; and an input/output circuit, for connecting the plurality of bit lines to read out messages.

Abstract: A read only memory (ROM) and an operating method thereof are provided. The read only memory includes: a control circuit, powered by a first power source for outputting a control signal within a first voltage range; a voltage shifter, for expanding the amplitude of the control signal to a second voltage range; a word line driver, powered by a second power source with a voltage which is higher than that of the first power source, for driving one of a plurality of word lines of a read only memory cell array according to the control signal which is expanded to be within the second voltage range; and an input/output circuit, for connecting the plurality of bit lines to read out messages.