Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each having a lead frame interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the lead frame interconnect structure and encapsulant. The package interconnect structure and lead frame interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the lead frame interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the lead frame interconnect structure.

Abstract: A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

Abstract: An integrated circuit package system provides a leadframe having a short lead finger, a long lead finger, and a support bar. A first die is placed in the leadframe. An adhesive is attached to the first die, the long lead finger, and the support bar. A second die is offset from the first die. The offset second die is attached to the adhesive. The first die is electrically connected to the short lead finger. The second die is electrically connected to at least the long lead finger or the short lead finger. At least portions of the leadframe, the first die, and the second die are encapsulated in an encapsulant.

Abstract: An integrated circuit package system includes: providing a finger lead having a side with an outward exposed area and an inward exposed area separated by a lead cavity; positioning a chip adjacent the finger lead and connected to the finger lead; and a stack encapsulant encapsulating the chip and the finger lead with the outward exposed area and the inward exposed area of the finger lead substantially exposed.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a shaped platform with a conductive post; mounting the shaped platform with the conductive post over a temporary carrier; mounting an integrated circuit device over the temporary carrier; encapsulating the conductive post and the integrated circuit device; removing a portion of the shaped platform isolating the conductive post; and removing the temporary carrier.

Abstract: An integrated circuit package system includes: connecting a carrier and an integrated circuit mounted thereover; preforming a wire-in-film encapsulation having a cavity; pressing the wire-in-film encapsulation over the carrier and the integrated circuit with the cavity exposing a portion of the integrated circuit; and curing the wire-in-film encapsulation.

Abstract: An integrated circuit package system includes: fabricating an integrated circuit substrate; forming an internal stacking module coupled to the integrated circuit substrate including: forming a flexible substrate, coupling a stacking module integrated circuit to the flexible substrate, and bending a flexible extension over the stacking module integrated circuit; molding a package body on the integrated circuit substrate and the internal stacking module; and coupling an external integrated circuit to the internal stacking module exposed through the package body.

Abstract: A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.

Abstract: A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

Abstract: A method of forming through-hole vias in a semiconductor wafer involves forming a semiconductor wafer having a plurality of die. A trench is formed between the semiconductor die. The trench extending partially through the semiconductor wafer. The portion of the semiconductor wafer below the trench along a backside of the wafer maintaining structural support for the wafer during the processing steps of forming a plurality of conductive vias between the die, and forming traces to electrically connect the conductive vias to contact pads on the die. The portion of the semiconductor wafer below the trench along the backside of the wafer is removed. The semiconductor wafer is singulated to separate the die. The singulation can be performed through the conductive vias to make half conductive vias or between the conductive vias to make full conductive vias. The die can be stacked and electrically connected through the conductive vias.

Abstract: A method of forming through-hole vias in a semiconductor wafer involves forming a semiconductor wafer having a plurality of die with contact pads disposed on a surface of each die. The semiconductor wafer has a saw street between each die. A trench is cut in the saw street without using support material to support the wafer. The trench extends only partially through the wafer. The uncut portion of the saw street below the trench along a backside of the wafer providing structural support for the wafer without support material during formation a plurality of conductive vias in the saw streets adjacent to the contact pads, and electrical connection of the conductive vias to the contact pads. The uncut portion of the saw street below the trench along the backside of the wafer portion is removed. The semiconductor wafer is singulated along the saw street to separate the die.

Abstract: A method of forming through-hole vias in a semiconductor wafer involves forming a semiconductor wafer having a plurality of die with contact pads disposed on a surface of each die. The semiconductor wafer has a saw street between each die. A trench is formed in the saw street without using support material to support the semiconductor wafer. The trench extends only partially through the semiconductor wafer. The portion of the saw street below the trench along a backside of the semiconductor wafer has sufficient thickness to maintain structural support for the semiconductor wafer without support material during formation of conductive vias between the die, and electrically connection of the conductive vias to the contact pads. The portion of the saw street below the trench along the backside of the semiconductor wafer is removed. The semiconductor wafer is singulated along the saw street to separate the die.

Abstract: One or more electronic components can be mounted on the back side of a semiconductor die. The components can be passive components, active components, or combinations thereof. The components can be soldered to signal routes on the back side of the die, the signal routes being attached to the die using a metallization layer or using one or more dielectric layer sections. Placing components on the back side of the die can allow for incorporation of the components without necessarily increasing the form factor of the die's package.

Abstract: An integrated circuit package system provides a leadframe having a short lead finger, a long lead finger, and a support bar. A first die is placed in the leadframe. An adhesive is attached to the first die, the long lead finger, and the support bar. A second die is offset from the first die. The offset second die is attached to the adhesive. The first die is electrically connected to the short lead finger. The second die is electrically connected to at least the long lead finger or the short lead finger. At least portions of the leadframe, the first die, and the second die are encapsulated in an encapsulant.

Abstract: A semiconductor device is manufactured by, first, providing a wafer designated with a saw street guide. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A plurality of via holes is formed in the organic material. Each of the plurality of via holes is patterned to each of a plurality of bond pad locations on the plurality of dies. A conductive material is deposited in each of the plurality of via holes.

Abstract: A semiconductor package has a first conductive layer formed on a top surface of a substrate. A conductive via is formed between the first conductive layer and a bottom surface of the substrate. A semiconductor component is mounted to the substrate and electrically connected to the first electrical contact pad. The semiconductor component can be a flip chip semiconductor device, wire bond semiconductor device, or passive component. An encapsulant is deposited over the semiconductor component. The encapsulant extends into a channel formed on a side of the substrate from the top surface to the bottom surface of the substrate. An interconnect structure is formed over the bottom surface of the substrate. A heat spreader structure can be disposed over the semiconductor component. An EMI shield can be disposed over the semiconductor component. A plurality of semiconductor components can be stacked in a package-in-package arrangement.

Abstract: An integrated circuit package system includes: providing a protective layer having an opening; forming a conductive layer over the protective layer and filling the opening; patterning a rigid locking lead, having both a lead locking portion and a lead exposed portion, from the conductive layer; connecting an integrated circuit and the rigid locking lead; and forming an encapsulation over the integrated circuit with the lead locking portion in the encapsulation and the lead exposed portion exposed from the encapsulation.

Abstract: An integrated circuit package system including: providing a substrate with a wire-bonded die mounted thereover; mounting a first support structure and a second support structure of different size above the substrate; mounting a structure above the first support structure and the second support structure; and encapsulating the wire-bonded die, the first support structure and the second support structure with an encapsulation.

Abstract: A semiconductor device is made by mounting a first semiconductor die to a first substrate, forming a first encapsulant over the first semiconductor die, and forming a second encapsulant over the first encapsulant. The second encapsulant is penetrable, thermally conductive material. A second semiconductor die is mounted to the second substrate. A bond wire electrically connects the second semiconductor die to the second substrate. A passive circuit element is mounted to the second substrate. Leading with the second encapsulant, the first substrate is pressed onto the second substrate so that the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element. The second encapsulant is then cured. A third encapsulant is formed over the first and second substrates. A shield can be disposed over the second semiconductor die with openings for the second encapsulant to flow through when pressed onto the second substrate.

Abstract: A semiconductor wafer is made by forming a first conductive layer over a sacrificial substrate, mounting a semiconductor die to the sacrificial substrate, depositing an insulating layer over the semiconductor die and first conductive layer, exposing the first conductive layer and contact pad on the semiconductor die, forming a second conductive layer over the insulating layer between the first conductive layer and contact pad, forming solder bumps on the second conductive layer, depositing an encapsulant over the semiconductor die, first conductive layer, and interconnect structure, and removing the sacrificial substrate after forming the encapsulant to expose the conductive layer and semiconductor die. A portion of the encapsulant is removed to expose a portion of the solder bumps. The solder bumps are sized so that each extends the same outside the encapsulant. The semiconductor die are stacked by electrically connecting the solder bumps.