Abstract: An integrated circuit package system includes: providing an integrated circuit substrate; forming an internal stacking module coupled to the integrated circuit substrate including: forming a flexible substrate, coupling a stacking module integrated circuit to the flexible substrate, and bending a flexible extension over the stacking module integrated circuit; and molding a package body on the integrated circuit substrate and the internal stacking module.

Abstract: A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

Abstract: A semiconductor device includes a first substrate. A first semiconductor die is mounted to the first substrate. A bond wire electrically connects the first semiconductor die to the first substrate. A first encapsulant is deposited over the first semiconductor die, bond wire, and first substrate. The first encapsulant includes a penetrable, thermally conductive material. In one embodiment, the first encapsulant includes a viscous gel. A second substrate is mounted over a first surface of the first substrate. A second semiconductor die is mounted to the second substrate. The second semiconductor die is electrically connected to the first substrate. The first substrate is electrically connected to the second substrate. A second encapsulant is deposited over the first semiconductor die and second semiconductor die. An interconnect structure is formed on a second surface of the first substrate, opposite the first surface of the first substrate.

Abstract: An integrated circuit packaging system includes: an integrated circuit device; a conductive post adjacent the integrated circuit device, the conductive post with a contact surface having characteristics of a shaped platform removed; and an encapsulant around the conductive post and the integrated circuit device with the conductive post extending through the encapsulant and each end of the conductive post exposed from the encapsulant.

Abstract: An integrated circuit package system includes: providing a mountable structure having a contact pad and an inner pad; mounting an integrated circuit device having a linear through channel over the mountable structure with the linear through channel traversing between an integrated circuit device first side and an integrated circuit device second side; and connecting the linear through channel exposed on the integrated circuit device second side to the inner pad.

Abstract: A leadless package system includes: an integrated circuit die having contact pads; external contact terminals with a conductive layer and an external coating layer; connections between contact pads in the integrated circuit die and the external contact terminals; and an encapsulant encapsulates the integrated circuit die and the external contact terminals including the external coating layer.

Abstract: An integrated circuit package system that includes: providing a support structure including a device and an electrical contact adjacent thereto; providing a mold system having a cavity, a recess channel, a recess integrally connected to the recess channel, and a resilient member that cooperatively engages the recess channel and the recess; engaging the mold system and the support structure with the cavity over the device and the resilient member between the device and the electrical contact; and injecting encapsulation material into the cavity.

Abstract: A semiconductor wafer contains a plurality of die with contact pads disposed on a first surface of each die. Metal vias are formed in trenches in the saw street guides and are surrounded by organic material. Traces connect the contact pads and metal vias. The metal vias can be half-circle vias or full-circle vias. Metal vias are also formed through the contact pads on the active area of the die. Redistribution layers (RDL) are formed on a second surface of the die opposite the first surface. Repassivation layers are formed between the RDL for electrical isolation. The die are stackable and can be placed in a semiconductor package with other die. The vias through the saw streets and vias through the active area of the die, as well as the RDL, provide electrical interconnect to the adjacent die.

Abstract: An integrated circuit package system includes: providing a mountable structure having a contact pad and an inner pad; mounting an integrated circuit device having a linear through channel over the mountable structure with the linear through channel traversing between an integrated circuit device first side and an integrated circuit device second side; and connecting the linear through channel exposed on the integrated circuit device second side to the inner pad.

Abstract: A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

Abstract: An integrated circuit package system provides a leadframe having a short lead finger and a long lead finger, and the long lead finger and the short lead finger reside substantially within the same horizontal plane. A first die is placed in the leadframe. A second die is offset from the first die. The offset second die is attached over the first die and the long lead finger with an adhesive. The first die is electrically connected to the short lead finger. The second die is electrically connected to at least the long lead finger or the short lead finger. At least portions of the leadframe, the first die, and the second die are encapsulated in an encapsulant.

Abstract: A semiconductor wafer is made by forming a first conductive layer over a sacrificial substrate, mounting a semiconductor die to the sacrificial substrate, depositing an insulating layer over the semiconductor die and first conductive layer, exposing the first conductive layer and contact pad on the semiconductor die, forming a second conductive layer over the insulating layer between the first conductive layer and contact pad, forming solder bumps on the second conductive layer, depositing an encapsulant over the semiconductor die, first conductive layer, and interconnect structure, and removing the sacrificial substrate after forming the encapsulant to expose the conductive layer and semiconductor die. A portion of the encapsulant is removed to expose a portion of the solder bumps. The solder bumps are sized so that each extends the same outside the encapsulant. The semiconductor die are stacked by electrically connecting the solder bumps.

Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each including a leadframe interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the leadframe interconnect structure and encapsulant. The package interconnect structure and leadframe interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the leadframe interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the leadframe interconnect structure.

Abstract: A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

Abstract: An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each including a leadframe interconnect structure around a cavity. A semiconductor die is disposed in each cavity. An encapsulant is deposited in the cavity over the die. A package interconnect structure is formed over the leadframe interconnect structure and encapsulant. The package interconnect structure and leadframe interconnect structure are electrically connected to the die. The frame carrier is singulated into individual embedded die packages. The semiconductor die can be vertically stacked or placed side-by-side within the cavity. The embedded die packages can be stacked and electrically interconnected through the leadframe interconnect structure. A semiconductor device can be mounted to the embedded die package and electrically connected to the die through the leadframe interconnect structure.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a mountable assembly includes: forming an integrated circuit device having a non-horizontal device side, an active device side, and a passive device side, providing a first integrated circuit die having an active side, a passive side, and an internal interconnect on the active side, applying a die attach adhesive on the passive side, attaching the passive side to the passive device side with the die attach adhesive, and applying an underfill on the passive device side and the internal interconnect, the underfill having a non-horizontal underfill side coplanar with the non-horizontal device side; and mounting on a substrate the mountable assembly.

Abstract: An integrated circuit packaging system includes: a base integrated circuit package having a base integrated circuit on a base substrate thereof; a base barrier on the base substrate adjacent a base perimeter of the base substrate; a stack substrate over the base substrate, the stack substrate having a stack substrate aperture with the stack substrate having an inter-substrate connector thereon; a connector underfill through the stack substrate aperture encapsulating the inter-substrate connector, overflow of the connector underfill prevented by the base barrier; and a cavity formed of the stack substrate, the base integrated circuit package, and the connector underfill, the cavity horizontally offset from the base barrier.

Abstract: A method of manufacture of an integrated circuit packaging system includes: fabricating a base package substrate having a component side and a system side; coupling stacking interconnects on the component side; and forming an integrated circuit receptacle, for receiving an integrated circuit device, by molding a reinforced encapsulant on the component side and exposing a portion of the stacking interconnects.

Abstract: An ultra-thin wafer system providing thinning a wafer on a protective tape to an ultra-thin thickness and forming electrical interconnects on the thinned wafer on a support plate.

Abstract: A semiconductor wafer is made by forming a first conductive layer over a sacrificial substrate, mounting a semiconductor die to the sacrificial substrate, depositing an insulating layer over the semiconductor die and first conductive layer, exposing the first conductive layer and contact pad on the semiconductor die, forming a second conductive layer over the insulating layer between the first conductive layer and contact pad, forming solder bumps on the second conductive layer, depositing an encapsulant over the semiconductor die, first conductive layer, and interconnect structure, and removing the sacrificial substrate after forming the encapsulant to expose the conductive layer and semiconductor die. A portion of the encapsulant is removed to expose a portion of the solder bumps. The solder bumps are sized so that each extends the same outside the encapsulant. The semiconductor die are stacked by electrically connecting the solder bumps.