Patents by Inventor Hee-Bom Kim
Hee-Bom Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20120058432Abstract: A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.Type: ApplicationFiled: August 26, 2011Publication date: March 8, 2012Inventors: Jin Choi, Byung-gook Kim, Hee-bom Kim, Sang-hee Lee
-
Publication number: 20110244376Abstract: A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.Type: ApplicationFiled: May 6, 2011Publication date: October 6, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hak-seung HAN, Seong-woon Choi, Byung-gook Kim, Hee-bom Kim, Sung-ho Park
-
Patent number: 7939223Abstract: A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.Type: GrantFiled: April 2, 2007Date of Patent: May 10, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hak-seung Han, Seong-woon Choi, Byung-gook Kim, Hee-bom Kim, Sung-ho Park
-
Publication number: 20110104593Abstract: In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes.Type: ApplicationFiled: January 6, 2011Publication date: May 5, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Gi-Sung Yoon, Hee-Bom Kim, Sun-Young Choi
-
Patent number: 7897299Abstract: In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes.Type: GrantFiled: December 13, 2007Date of Patent: March 1, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Gi-Sung Yoon, Hee-Bom Kim, Sun-Young Choi
-
Patent number: 7865866Abstract: A method of precisely inspecting the entire surface of a mask at a high speed in consideration of optical effects of the mask. The method includes designing a target mask layout for a pattern to be formed on a wafer, and extracting an effective mask layout using an inspection image measured from the target mask layout using an aerial image inspection apparatus as a mask inspection apparatus. The effective mask layout is input to a wafer simulation tool for calculating a wafer image to be formed on the wafer. Optical effects of the mask are detected by comparing the target mask layout with the effective mask layout.Type: GrantFiled: May 16, 2008Date of Patent: January 4, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-Bom Kim, Min-Kyu Ji, Sun-Young Choi, Hyun-Joo Baik
-
Publication number: 20100266959Abstract: A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.Type: ApplicationFiled: April 15, 2010Publication date: October 21, 2010Inventors: Sang-Hee Lee, Jin Choi, Byung-Gook Kim, Hee-Bom Kim
-
Patent number: 7754398Abstract: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.Type: GrantFiled: June 25, 2007Date of Patent: July 13, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-bom Kim, Jeung-woo Lee, Sung-min Huh
-
Patent number: 7745068Abstract: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.Type: GrantFiled: June 6, 2006Date of Patent: June 29, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Sik Jung, Hee-Bom Kim, Woo-Sung Han, Sung-Min Huh
-
Patent number: 7745072Abstract: Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.Type: GrantFiled: June 12, 2007Date of Patent: June 29, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-sik Jung, Hee-bom Kim, Hoon Kim, Sung-min Huh
-
Patent number: 7736838Abstract: Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.Type: GrantFiled: November 1, 2006Date of Patent: June 15, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-Bom Kim, Seong-Woon Choi
-
Publication number: 20100111427Abstract: A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.Type: ApplicationFiled: October 28, 2009Publication date: May 6, 2010Inventors: Hee-Bom Kim, Myoung-Soo Lee, Young-Su Sung
-
Patent number: 7642017Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.Type: GrantFiled: March 20, 2007Date of Patent: January 5, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-min Huh, Hee-bom Kim
-
Patent number: 7601467Abstract: A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.Type: GrantFiled: March 6, 2006Date of Patent: October 13, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-min Huh, Hee-bom Kim, Seong-woon Choi, Dong-wan Kim, Chan-uk Jeon
-
Publication number: 20090191475Abstract: A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.Type: ApplicationFiled: March 26, 2009Publication date: July 30, 2009Applicant: Samsung Electronics Co., Ltd.Inventors: Myoung-soo Lee, Young-su Sung, Hee-bom Kim, Min-kyung Lee, Dong-gun Lee
-
Patent number: 7525089Abstract: A method and apparatus for measuring a critical dimension (CD) are provided. Image data of a measurement pattern are generated. The measurement pattern may include a first surface and a second surface facing each other. The image data may include a first side and a second side corresponding to the first surface and the second surface of the measurement pattern, respectively. The image data may be edited to increase an overlap length of the first and second sides. A measurement window crossing the first and second sides in the edited image data is set. A distance between the first and second sides in the measurement window is measured.Type: GrantFiled: May 16, 2006Date of Patent: April 28, 2009Assignee: Samsung Electronics Co., LtdInventors: Yo-Han Choi, Hee-Bom Kim
-
Publication number: 20080288912Abstract: A method of precisely inspecting the entire surface of a mask at a high speed in consideration of optical effects of the mask. The method includes designing a target mask layout for a pattern to be formed on a wafer, and extracting an effective mask layout using an inspection image measured from the target mask layout using an aerial image inspection apparatus as a mask inspection apparatus. The effective mask layout is input to a wafer simulation tool for calculating a wafer image to be formed on the wafer. Optical effects of the mask are detected by comparing the target mask layout with the effective mask layout.Type: ApplicationFiled: May 16, 2008Publication date: November 20, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Hee-Bom KIM, Min-Kyu JI, Sun-Young CHOI, Hyun-Joo BAIK
-
Publication number: 20080145771Abstract: In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes.Type: ApplicationFiled: December 13, 2007Publication date: June 19, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Gi-Sung Yoon, Hee-Bom Kim, Sun-Young Choi
-
Publication number: 20080090156Abstract: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.Type: ApplicationFiled: June 25, 2007Publication date: April 17, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Hee-Bom Kim, Jeung-woo Lee, Sung-min Huh
-
Publication number: 20080044742Abstract: Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.Type: ApplicationFiled: June 12, 2007Publication date: February 21, 2008Inventors: Jin-sik Jung, Hee-bom Kim, Hoon Kim, Sung-min Huh