Abstract: A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first, light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.

Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.

Abstract: Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.

Abstract: A method and apparatus for measuring a critical dimension (CD) are provided. Image data of a measurement pattern are generated. The measurement pattern may include a first surface and a second surface facing each other. The image data may include a first side and a second side corresponding to the first surface and the second surface of the measurement pattern, respectively. The image data may be edited to increase an overlap length of the first and second sides. A measurement window crossing the first and second sides in the edited image data is set. A distance between the first and second sides in the measurement window is measured.

Abstract: A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on the weak point data.

Abstract: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Abstract: A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

Abstract: A phase shift mask (PSM) is provided. The PSM includes a light-transmitting substrate, a light-blocking region, a first light-transmitting region, and a second light-transmitting region. The light-blocking region is formed in the light-transmitting substrate. The first light-transmitting region is formed as both a first phase shift region for transmitting 0°-phase shifted light and as a first polarization region for TE-polarizing the transmitted light. The second light-transmitting region contacts the first light-transmitting region to form a boundary. The second light-transmitting region is formed in the light-transmitting substrate as a second phase shift region for transmitting 180°-phase shifted light and as a second polarization region for TM-polarizing the transmitted light to prevent a phase conflict at the boundary.

Abstract: The present invention relates to a method for forming a multi-transmittance phase-shifting mask for the manufacture of highly integrated semiconductor devices in which portions of a plurality of light blocking layers are selectively removed to modify the transmittance of various regions of the mask and suppress undesired patterns, such as ghost images and side lobe effects to permit increased integration levels and improved yield in the production of the semiconductor devices.

Abstract: The present invention relates to a method for forming a multi-transmittance phase-shifting mask for the manufacture of highly integrated semiconductor devices in which portions of a plurality of light blocking layers are selectively removed to modify the transmittance of various regions of the mask and suppress undesired patterns, such as ghost images and side lobe effects to permit increased integration levels and improved yield in the production of the semiconductor devices.

Abstract: A simulation method for simulating in a lithographic process is disclosed, and the method can expect a size of a resist pattern by obtaining a diffused aerial image model(DAIM) by determining a simplified model in a aerial image to represent a resist process without simulating full processes including a resist process, and then applying the DAIM to a threshold model.

Abstract: A phase shift mask for forming contact holes arranged in longitudinal, transversal and diagonal directions, capable of achieving an improvement in light contrast in the formation of contact holes, thereby forming a fine contact hole pattern. The phase shift mask includes a shifter formed on a transparent substrate and patterned to define windows respectively arranged at contact hole regions where the contact holes are formed. The windows consist of first windows each having a central portion defined by a portion of the shifter and an edge portion defined by an exposed portion of the substrate arranged around the portion of the shifter, and second windows each having a central portion defined by an exposed portion of the substrate and an edge portion defined by a portion of the shifter arranged around the exposed portion of the substrate.