Abstract: A semiconductor device in a peripheral circuit region includes a semiconductor substrate having a plurality of active areas which are disposed distantly from each other; a gate pattern including at least one gate disposed on the active area; a dummy gate disposed between the active areas and first and second pads; first and second pads connected to both sides of the gate and the dummy gate, respectively; and a first wiring formed so as to be in contact with at least one of the first and second pads.

Abstract: Disclosed herein is a phosphate-based dielectric ceramic composition which has a low dielectric constant and a low dielectric loss in the high-frequency bands such as microwave and millimeter wave. The composition is represented by the following formula: (1-x)(A?1-yA?y)O-xP2O5 wherein x and y are numbers satisfying the following conditions: 0 <×<1 and 0?y?1, and A? and A? are each independently selected from the group consisting of Ca, Ba, Sr, Zn, Mb, Ni, Mn and Cu. The composition may further include a sintering assistant and an additive. Since the composition can be sintered at a temperature as low as 1,000° C., it can be simultaneously calcined together with a metal electrode such as silver, copper or silver/palladium electrode.

Abstract: Disclosed herein is a phosphate-based dielectric ceramic composition which has a low dielectric constant and a low dielectric loss in the high-frequency bands such as microwave and millimeter wave. The composition is represented by the following formula: (1-x)(A?1-yA?y)O-xP2O5 wherein x and y are numbers satisfying the following conditions: 0 <×<1 and 0?y?1, and A? and A? are each independently selected from the group consisting of Ca, Ba, Sr, Zn, Mb, Ni, Mn and Cu. The composition may further include a sintering assistant and an additive. Since the composition can be sintered at a temperature as low as 1,000° C., it can be simultaneously calcined together with a metal electrode such as silver, copper or silver/palladium electrode.

Abstract: A dielectric ceramic composition comprising 3BaO.5TiO2.3Nb2O5 (Ba3Ti5Nb6O28) as a main component and at least one selected from, as a minor component, (b-1) sintering auxiliary selected from the group consisting of a boron-containing glass compound, CuO, ZnO or mixtures thereof, or (b-2) additives selected from the group consisting of V2O5, SnO2, MgO, NiO, Sb2O3, Bi2O3, LiF, Ag2O or mixtures thereof, and mixtures of (b-1) and (b-2), and its preparation process are disclosed.