Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.

Abstract: The present invention relates to a transition metal compound for an olefin polymerization catalyst, represented by chemical formula 1. The description of chemical formula 1 is as described in the specification.

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

Abstract: A capacitor component includes a body including a dielectric layer, a layering portion in which first and second internal electrodes opposing each other are layered in a first direction, and first and second connecting portions disposed on both surfaces of the layering portion taken in a second direction perpendicular to the first direction and connected to the first and second internal electrodes, respectively; and first and second external electrodes disposed on the first and second connecting portions, respectively, and the first and second external electrodes include metal powder particles, a surface of each of which is coated with at least one of graphene and carbon nanotubes.

Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium producing a purine nucleotide and a method for producing a purine nucleotide using the same.

Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.

Abstract: A positive electrode active material includes a lithium transition metal oxide represented by Formula 1, and a lithium-containing inorganic compound layer formed on a surface of the lithium transition metal oxide, Li1+a(NibCocXdM1eM2f)1?aO2 ??[Formula 1] in Formula 1, X is at least one selected from the group consisting of manganese (Mn) and aluminum (Al), M1 is at least one selected from the group consisting of sulfur (S), fluorine (F), phosphorus (P), and nitrogen (N), M2 is at least one selected from the group consisting of zirconium (Zr), boron (B), cobalt (Co), tungsten (W), magnesium (Mg), cerium (Ce), tantalum (Ta), titanium (Ti), strontium (Sr), barium (Ba), hafnium (Hf), F, P, S, lanthanum (La), and yttrium (Y), 0?a?0.1, 0.6?b?0.99, 0?c?0.2, 0?d?0.2, 0<e?0.1, and 0<f?0.1. A method of preparing the positive electrode active material, a positive electrode and a lithium secondary battery are also provided.

Abstract: A positive electrode active material includes a nickel-containing lithium transition metal oxide containing nickel in an amount of 60 mol % or more based on a total number of moles of transition metals excluding lithium, and a lithium-containing inorganic compound layer formed on a surface of the nickel-containing lithium transition metal oxide, wherein the positive electrode active material has a first peak in a range of 5 eV or less, a second peak in a range of 7 eV to 13 eV, and a third peak in a range of 20 eV to 30 eV when intensity is measured by X-ray photoelectron spectroscopy, and the first peak has a maximum value of 80% to 120% with respect to the third peak. A method of preparing the positive electrode active material, and a positive electrode and a lithium secondary battery are also provided.

Abstract: An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.

Abstract: A printed circuit board including: a circuit layer including a plurality of circuit layers; a first structure including a plurality of first unit vias, each first unit via being vertically disposed and formed between successive circuit layers that are vertically adjacent to each other; and a second structure including a plurality of second unit vias, each second unit via being vertically disposed and horizontally spaced apart from a respective first unit via, wherein a horizontal spaced distance between each respective first unit via and the second unit via is a set value or less.

Abstract: A positive electrode active material including a nickel-containing lithium transition metal oxide containing nickel in an amount of 60 mol % or more based on a total number of moles of transition metals excluding lithium, and a coating layer which is formed on a surface of the nickel-containing lithium transition metal oxide and includes a lithium-containing inorganic compound, a nickel oxide, and a nickel oxyhydroxide is provided. A method of preparing the positive electrode active material, and a positive electrode for a lithium secondary battery and a lithium secondary battery which include the positive electrode active material are also provided.

Abstract: Provided is a transmission for a motor including: an input shaft rotating by driving force transmitted from the motor and having a plurality of pawls disposed on the outer circumferential surface; controller for controlling protrusion and retraction of the pawls; a plurality of driving gears through the centers of which the input shaft passes, which have ratchets formed on the inner circumferential surfaces thereof so as to be engaged with the pawls, and which are different in the number of gear teeth; a plurality of driven gears which are externally meshed with the driving gears and are different in the number of gear teeth; and an output unit for outputting rotary speed changed in speed by the driving gears and the driven gears.

Abstract: A nozzle assembly, according to one embodiment of the present invention, comprises; a nozzle case; a nozzle provided in the nozzle case to move forward and backward, and having an ejection hole at one end thereof; and a moving guide member provided at the lower side of the nozzle case so as to reciprocate in the direction intersecting the longitudinal direction of the nozzle case, wherein the nozzle case is coupled to the moving guide member so as to rotate according to a reciprocating motion of the moving guide member.

Abstract: A lamp module according to an embodiment of the present invention comprises: a lamp having electrode terminals at both ends thereof; a bracket portion including first and second brackets coupled to both ends of the lamp so that the electrode terminals of the lamp are supported; and a cover glass having the lamp and the bracket portion inserted and coupled therein, and having a cavity such that one surface of the bracket is externally exposed, wherein the first bracket may be provided with a communication portion for communicating the inside and the outside of the cover glass.

Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.

Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and having first and second surfaces opposing each other, third and fourth surfaces connecting the first and second surfaces to each other, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other; a plurality of internal electrodes disposed in the ceramic body, exposed to the first and second surfaces, and having one ends exposed to the third or fourth surface; and a first side margin portion and a second side margin portion disposed, respectively, on side portions of the internal electrodes exposed to the first and second surfaces. A thickness of each of the first and second side margin portions is 10 ?m or more and less than 45 ?m.

Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and having first and second surfaces opposing each other, third and fourth surfaces connecting the first and second surfaces to each other, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other; a plurality of internal electrodes disposed in the ceramic body, exposed to the first and second surfaces, and having one ends exposed to the third or fourth surface; and a first side margin portion and a second side margin portion disposed, respectively, on side portions of the internal electrodes exposed to the first and second surfaces. A thickness of each of the first and second side margin portions is 10 ?m or more and less than 45 ?m.

Abstract: A semiconductor package molding device is provided. The semiconductor package molding device includes a chamber lower part which comprises a lower mold configured to receive a molding target, a chamber upper part configured to engage with the chamber lower part to isolate the inside of a chamber from the outside of the chamber, the chamber upper part including an upper mold configured to form a cavity with the lower mold, a first vent hole located between the chamber upper part and the chamber lower part, the first vent hole configured to discharge gas from the inside of the cavity after the chamber upper part and the chamber lower part engage with each other, a pot which is formed in the lower mold in the chamber lower part, a plunger configured to push up a molding material in the pot, a second vent hole which is formed in a side surface of the pot in the chamber lower part and a cavity vacuum pump configured to discharge gas through the first vent hole and the second vent hole.

Abstract: An inductor includes a body having a coil, a magnetic material surrounding the coil, and a resin; and an external electrode disposed on at least a surface of the body. The body disposed in the inductor includes a particle which may soften an external impact acting on the inductor, in addition to acting on the magnetic material and the resin, and the external impact may be a physical impact or a thermal impact.

Abstract: Disclosed is a source drive integrated circuit comprising: a core unit, a channel processing unit provided in each of a channel area disposed in a first side of the control area and a channel area disposed in a second side of the control area facing the first side to convert digital data, corresponding to a digital image signal transferred from the core unit, into a data voltage corresponding to an analog image signal and to output the data voltage, a resistor string provided in at least one of a pad area disposed in a third side of the control area and a pad area disposed in a fourth side of the control area facing the third side to generate a gamma voltage for converting the digital data into the data voltage and to supply the gamma voltage to the channel processing unit, and N number of gamma pads.