Patents by Inventor Hee-Ju Shin
Hee-Ju Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9087977Abstract: A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.Type: GrantFiled: April 16, 2014Date of Patent: July 21, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jeong-Heon Park, Ki-Woong Kim, Hee-Ju Shin, Joon-Myoung Lee, Woo-Jin Kim, Jae-Hoon Kim, Se-Chung Oh, Yun-Jae Lee
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Publication number: 20150048464Abstract: A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.Type: ApplicationFiled: April 16, 2014Publication date: February 19, 2015Inventors: JEONG-HEON PARK, KI-WOONG KIM, HEE-JU SHIN, JOON-MYOUNG LEE, WOO-JIN KIM, JAE-HOON KIM, SE-CHUNG OH, YUN-JAE LEE
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Publication number: 20140327095Abstract: A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.Type: ApplicationFiled: April 16, 2014Publication date: November 6, 2014Inventors: Young-hyun KIM, Hee-ju SHIN, Woo-jin KIM, Sang-hwan PARK
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Patent number: 8803265Abstract: A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer.Type: GrantFiled: June 28, 2011Date of Patent: August 12, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chang Lim, Young-hyun Kim, Jun-ho Jeong, Hee-ju Shin
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Patent number: 8796042Abstract: A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.Type: GrantFiled: November 1, 2011Date of Patent: August 5, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-Ju Shin, Jun-Ho Jeong, Jang-Eun Lee, Se-Chung Oh
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Patent number: 8625325Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.Type: GrantFiled: August 10, 2010Date of Patent: January 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Ik-Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho
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Publication number: 20130171743Abstract: A magnetic device and a method of manufacturing the same. In the method, a lower magnetic layer, an insulation layer, and an upper magnetic layer are sequentially formed on a substrate. An upper magnetic layer pattern is formed by patterning the upper magnetic layer until an upper surface of the insulation layer is exposed. An isolation layer pattern is formed from portions of the insulation layer and the lower magnetic layer by performing an oxidation process on the exposed upper surface of the insulation layer, and an insulation layer pattern and a lower magnetic layer pattern are formed from portions of the insulation layer and the lower magnetic layer, where the isolation layer pattern is not formed.Type: ApplicationFiled: December 28, 2012Publication date: July 4, 2013Inventors: Jang-eun Lee, Soon-oh Park, Sang-hwan Park, Hee-ju Shin
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Patent number: 8445354Abstract: A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.Type: GrantFiled: February 8, 2012Date of Patent: May 21, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Ho Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Patent number: 8334148Abstract: An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.Type: GrantFiled: July 15, 2011Date of Patent: December 18, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-Ho Jeong, Jang-Eun Lee, Woo-Jin Kim, Hee-Ju Shin, Yong-Hwan Ryu
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Patent number: 8222625Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001?X?0.3, 0.001?Y?0.8, 0.1?Z?0.8, and X+Y+Z=1.Type: GrantFiled: January 26, 2010Date of Patent: July 17, 2012Assignees: Samsung Electronics Co., Ltd., Ovonyx, Inc.Inventors: Dong-ho Ahn, Hideki Horii, Soon-oh Park, Young-hyun Kim, Hee-ju Shin, Jin-ho Oh, Carl H. Schell, Jonathan D. Maimon, Stephen J. Hudgens
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Publication number: 20120142161Abstract: A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.Type: ApplicationFiled: February 8, 2012Publication date: June 7, 2012Inventors: Yong-Ho HA, Bong-Jin KUH, Han-Bong KO, Doo-Hwan PARK, Sang-Wook LIM, Hee-Ju SHIN
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Publication number: 20120135543Abstract: A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.Type: ApplicationFiled: November 1, 2011Publication date: May 31, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hee-Ju SHIN, Jun-Ho JEONG, Jang-Eun LEE, Se-Chung OH
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Patent number: 8133429Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.Type: GrantFiled: April 19, 2010Date of Patent: March 13, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Ho Ha, Bong-Jin Kuh, Han-Bong Ko, Doo-Hwan Park, Sang-Wook Lim, Hee-Ju Shin
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Publication number: 20120032135Abstract: A phase-change material layer is formed on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen. A phase-change material layer is obtained by doping a stabilizing metal into the preliminary phase-change material layer. An upper electrode is formed on the phase-change material layer. Since the phase-change material layer may have improved electrical characteristics, stability of phase transition and thermal stability, the phase-change memory unit may have reduced set resistance, enhanced durability, improved reliability, increased sensing margin, reduced driving current, etc.Type: ApplicationFiled: October 18, 2011Publication date: February 9, 2012Inventors: Bong-Jin KUH, Yong-Ho HA, Doo-Hwan PARK, Han-Bong KO, Sang-Wook LIM, Hee-Ju SHIN
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Publication number: 20120018824Abstract: A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer.Type: ApplicationFiled: June 28, 2011Publication date: January 26, 2012Inventors: Woo-chang LIM, Young-hyun Kim, Jun-ho Jeong, Hee-ju Shin
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Publication number: 20110315946Abstract: A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.Type: ApplicationFiled: September 2, 2011Publication date: December 29, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han-Bong KO, Yong-Ho Ha, Doo-Hwan Park, Bong-Jin Kuh, Hee-Ju Shin
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Publication number: 20110272380Abstract: An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.Type: ApplicationFiled: July 15, 2011Publication date: November 10, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun-Ho Jeong, Jang-Eun Lee, Woo-Jin Kim, Hee-Ju Shin, Yong-Hwan Ryu
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Patent number: 8012789Abstract: A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.Type: GrantFiled: February 18, 2009Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Han-Bong Ko, Yong-Ho Ha, Doo-Hwan Park, Bong-Jin Kuh, Hee-Ju Shin
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Publication number: 20110049458Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001?X?0.3, 0.001?Y?0.8, 0.1?Z?0.8, and X+Y+Z=1.Type: ApplicationFiled: January 26, 2010Publication date: March 3, 2011Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-ho Ahn, Hideki Horii, Soon-oh Park, Young-hyun Kim, Hee-ju Shin, Jin-ho Oh
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Publication number: 20110031461Abstract: A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening.Type: ApplicationFiled: October 22, 2010Publication date: February 10, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung-Jin KANG, Yong-Ho HA, Doo-Hwan PARK, Jeong-Hee PARK, Hee-Ju SHIN