Patents by Inventor Hee-Jung Yang

Hee-Jung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110127587
    Abstract: The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed in a sidewall of the trench; and a capping insulation layer formed in an upper portion of the gate electrode.
    Type: Application
    Filed: July 9, 2010
    Publication date: June 2, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventor: Hee Jung YANG
  • Publication number: 20110033959
    Abstract: A liquid crystal display (LCD) device having an array substrate with a top gate type TFT includes a first transparent metal layer deposited to enhance the adhesion between a data metal layer and an insulating substrate before a data metal deposition, and a second transparent metal layer deposited to enhance the adhesion between a gate metal layer and an insulating substrate before a gate metal deposition. The LCD device having the array substrate with a top gate type TFT can be fabricated with a reduced number of masking or sputtering processes, thereby reducing the fabrication time of the LCD device and increasing the yield of the LCD device.
    Type: Application
    Filed: October 18, 2010
    Publication date: February 10, 2011
    Inventor: Hee Jung YANG
  • Publication number: 20110024759
    Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
    Type: Application
    Filed: October 8, 2010
    Publication date: February 3, 2011
    Inventors: Jae-Gab LEE, Chang-Oh Jeong, Myung-Mo Sung, Hee-Jung Yang, Beom-Seok Cho
  • Publication number: 20100327337
    Abstract: A semiconductor memory device has an asymmetric buried gate structure with a stepped top surface and a method for fabricating the same. The method for fabricating the semiconductor memory device includes: etching a predetermined region of a semiconductor substrate to form an isolation layer defining an active region; forming a recess within the active region; forming a metal layer filling the recess; asymmetrically etching the metal layer to form an asymmetric gate having a stepped top surface at a predetermined portion of the recess; and forming a capping oxide layer filling a remaining portion of the recess where the asymmetric gate is not formed, thereby obtaining an asymmetric buried gate including the asymmetric gate and the capping oxide layer.
    Type: Application
    Filed: December 30, 2009
    Publication date: December 30, 2010
    Applicant: Hynix Semiconductor Inc.
    Inventor: Hee Jung YANG
  • Patent number: 7839475
    Abstract: A liquid crystal display (LCD) device having an array substrate with a top gate type TFT includes a first transparent metal layer deposited to enhance the adhesion between a data metal layer and an insulating substrate before a data metal deposition, and a second transparent metal layer deposited to enhance the adhesion between a gate metal layer and an insulating substrate before a gate metal deposition. The LCD device having the array substrate with a top gate type TFT can be fabricated with a reduced number of masking or sputtering processes, thereby reducing the fabrication time of the LCD device and increasing the yield of the LCD device.
    Type: Grant
    Filed: June 14, 2007
    Date of Patent: November 23, 2010
    Assignee: LG Display Co., Ltd.
    Inventor: Hee Jung Yang
  • Publication number: 20100200997
    Abstract: A semiconductor device includes a first plug formed on a semiconductor substrate and exposed on side and upper surfaces of an upper part thereof and a second plug formed on the first plug to contact the exposed side and upper surfaces of the upper part of the first plug.
    Type: Application
    Filed: March 26, 2009
    Publication date: August 12, 2010
    Inventor: Hee Jung YANG
  • Patent number: 7687333
    Abstract: According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: March 30, 2010
    Assignee: LG Display Co., Ltd.
    Inventors: Hee-Jung Yang, Dong-sun Kim, Du-Seok Oh, Won-Joon Ho
  • Publication number: 20090267087
    Abstract: A low-resistance wiring structure and a liquid crystal display are disclosed. The liquid crystal display includes a first substrate; a thin film transistor (TFT) formed on the first substrate and formed of a gate wiring, a data wiring and a semiconductor layer; and a second substrate attached to the first substrate in a facing manner, wherein at least one of the gate wiring and the data wiring is formed as a first wiring made of copper, a second wiring made of a barrier metal preventing spreading of copper, and a metal oxide film pattern formed between the first and second wirings. A MO/Cu wiring structure is implemented by using pure molybdenum, so that the low-resistance wiring structure with high reliability can be formed at a low cost.
    Type: Application
    Filed: December 17, 2008
    Publication date: October 29, 2009
    Inventors: Hee-Jung Yang, Gyu-Won Han
  • Publication number: 20090166640
    Abstract: The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.
    Type: Application
    Filed: December 12, 2008
    Publication date: July 2, 2009
    Inventors: Gyu Won Han, Dong Sun Kim, Won Joon Ho, Hee Jung Yang
  • Publication number: 20080227243
    Abstract: According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.
    Type: Application
    Filed: December 27, 2007
    Publication date: September 18, 2008
    Inventors: Hee-Jung YANG, Dong-sun KIM, Du-Seok OH, Won-Joon HO
  • Publication number: 20080002124
    Abstract: A liquid crystal display (LCD) device having an array substrate with a top gate type TFT includes a first transparent metal layer deposited to enhance the adhesion between a data metal layer and an insulating substrate before a data metal deposition, and a second transparent metal layer deposited to enhance the adhesion between a gate metal layer and an insulating substrate before a gate metal deposition. The LCD device having the array substrate with a top gate type TFT can be fabricated with a reduced number of masking or sputtering processes, thereby reducing the fabrication time of the LCD device and increasing the yield of the LCD device.
    Type: Application
    Filed: June 14, 2007
    Publication date: January 3, 2008
    Inventor: Hee Jung Yang
  • Publication number: 20070187690
    Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
    Type: Application
    Filed: March 26, 2007
    Publication date: August 16, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Gab Lee, Chang-Oh Jeong, Myung-Mo Sung, Hee-Jung Yang, Beom-Seok Cho
  • Patent number: 7211898
    Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: May 1, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Gab Lee, Chang-Oh Jeong, Myung-Mo Sung, Hee-Jung Yang, Beom-Seok Cho
  • Publication number: 20060163582
    Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
    Type: Application
    Filed: March 26, 2003
    Publication date: July 27, 2006
    Inventors: Jae-Gab Lee, Chang-Oh Jeong, Myung-Mo Sung, Hee-Jung Yang, Beom-Seok Cho