Abstract: The present invention provides a method and apparatus for deterring pets or other animals from biting or chewing into medication containers. In some embodiments, the invention consists of two or more conductive metal sheets or strips in layers around the side of the container, which are wired to complete a circuit when pressed by the force of an animal's bite or touched by an animal's tongue. In some embodiments, the sheets or strips are spaced or held apart so that a normal human grip would not have sufficient force to complete the circuit. In some embodiments, the device slides onto the medication container with a friction fit, and is removable for use on future containers. In some embodiments, the circuit includes a battery-powered alarm to deter the animal. In other embodiments, the circuit delivers a mild electrical shock to the animal's mouth or tongue through the metal strips or sheets.

Abstract: A displaying apparatus including: a panel substrate; a plurality of light emitting devices arranged on the panel substrate; and at least one connection tip disposed on one surface of each of the light emitting devices. Each of the light emitting devices includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; and first and second electrode pads disposed on the light emitting structure.

Abstract: A displaying apparatus including: a panel substrate; a plurality of light emitting devices arranged on the panel substrate; and at least one connection tip disposed on one surface of each of the light emitting devices. Each of the light emitting devices includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; and first and second electrode pads disposed on the light emitting structure.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: There are provided a polyester based copolymer resin capable of having an excellent shrinkage rate and being heat-shrunk at a low temperature, and a molded product comprising the same. The polyester based copolymer resin includes a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid; and a diol-derived residue including a predetermined residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate and a predetermined residue derived from 4,4-(oxybis(methylene)bis) cyclohexane methanol.

Abstract: A semiconductor device includes a lower stack structure that includes a lower word line, an upper stack structure that is on the lower stack structure and includes an upper word line, a decoder that is adjacent to the lower stack structure and the upper stack structure, a signal interconnection that is connected to the decoder, a lower selector that is connected to the signal interconnection and further connected to the lower word line, and an upper selector that is connected to the signal interconnection, isolated from direct contact with the lower selector, and further connected to the upper word line.

Abstract: An image forming apparatus and method for verifying forgery or falsification of an execution file by using a trusted platform module configured to generate an encryption key are provided. The method includes generating the encryption key by using a hash value for an operating system (OS) kernel image, the generating being performed by the trusted platform module, and verifying forgery or falsification of the execution file based on the generated encryption key.

Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

Abstract: There is provided a heat shrinkable film comprising a polyester based copolymer capable of having an excellent shrinkage rate and being heat shrunk at a low temperature. The heat shrinkable film according to an exemplary embodiment of the present invention includes a polyester based copolymer, wherein the polyester based copolymer includes: a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid; and a diol-derived residue including a residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate represented by the following Chemical Formula 1 and a residue derived from 4,4-(oxybis(methylene)bis) cyclohexane methanol represented by the following Chemical Formula 2.

Abstract: A vertical semiconductor device includes a conductive pattern structure in which insulation patterns and conductive patterns alternately and repeatedly stacked on the substrate. The conductive pattern structure includes an edge portion having a stair-stepped shape. Each of the conductive patterns includes a pad region corresponding to an upper surface of a stair in the edge portion. A pad conductive pattern is disposed to contact a portion of an upper surface of the pad region. A mask pattern is disposed on an upper surface of the pad conductive pattern. A contact plug penetrates the mask pattern to contact the pad conductive pattern.

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 ?m or more.

Abstract: There is provided a composition for forming a heat shrinkable film capable of providing a heat shrinkable film capable of having an excellent shrinkage rate and being heat-shrunk at a low temperature. The composition for forming a heat shrinkable film includes a polyethylene terephthalate (PET) resin having an inherent viscosity of 0.50 to 1.2 dl/g, and a polyester based copolymer including a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid and a diol-derived residue including a residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate represented by the following Chemical Formula 1 and a residue derived from 4,4-(oxybis(methylene)bis) cyclohexane methanol represented by the following Chemical Formula 2.

Abstract: There is provided a composition for forming a heat shrinkable film capable of providing a heat shrinkable film capable of having an excellent shrinkage rate and being heat-shrunk at a low temperature. The composition for forming a heat shrinkable film includes a polyethylene terephthalate (PET) resin having an inherent viscosity of 0.50 to 1.2 dl/g, and a polyester based copolymer including a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid and a diol-derived residue including a residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate represented by the following Chemical Formula 1 and a residue derived from 4,4-(oxybis(methylene)bis) cyclohexane methanol represented by the following Chemical Formula 2.

Abstract: A polyester based copolymer resin which can be used a heat shrinkable film is disclosed. The polyester based copolymer resin includes a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid, and a diol-derived residue including a residue derived from 4-(hydroxymethyl)cyclohexylmethyl 4?-(hydroxymethyl)cyclohexane carboxylate and a residue derived from 4,4-(oxybis(methylene)bis) cyclohexane methanol. The heat shrinkable film including polyester based copolymer resin has a shrinkage initiation temperature of 60° C. or less, the maximum heat shrinkage rate at 60° C. of 4% or more, and the maximum heat shrinkage rate at 90° C. of 80% or more.

Abstract: The present technology provides 3,3-difluoroallylamines or pharmaceutically acceptable salts thereof, preparation processes thereof, pharmaceutical compositions comprising the same, and uses thereof. The 3,3-difluoroallylamines or their pharmaceutically acceptable salts exhibit potent inhibitory activity on VAP-1 and therefore can be usefully applied, e.g., for the treatment and prophylaxis of nonalcoholic hepatosteatosis (NASH).

Abstract: A cannula includes a first segment configured to reside entirely within a vessel. The first segment includes a proximal exit opening disposed nearer to the heart, and multiple fenestrations disposed distally away from the proximal exit opening near a cannulation site. The fenestrations in combination with the proximal exit opening enable simultaneous perfusion of blood into the cannulated vessel along proximal and distal directions. During a medical procedure, blood introduced into a vessel (e.g., the femoral artery) by way of the cannula can exit the cannula in a manner that provides concurrent blood flow in a first set of directions proximally towards the heart and a second set of directions distally away from the heart. Radially displaceable anchoring elements positionable adjacent to the vessel's superficial wall aid retention of the first segment in the vessel. The fenestrations and/or anchoring elements can be arranged obliquely around portions of the cannula's circumference.

Abstract: The present invention provides a method enabling a quantitative analysis of a polymer by MALDI mass spectrometry, and a method for manufacturing a sample for MALDI mass spectrometry for a quantitative analysis of a polymer. To that end, the methods can increase reproducibility of a MALDI spectrum by making uniform the thickness of a sample affecting the pattern in a polymer MALDI spectrum. The sample according to the present invention is applicable also to a commercial MALDI-TOF instrument, and, thus, can quantitatively analyze a polymer in a more efficient and faster manner.

Abstract: A heat shrinkable film comprising a polyester based copolymer is provided.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: A memory device includes memory cells, the memory cells each including a first gate, a second gate electrically isolated from the first gate, a first gate insulating layer including a data storage layer having a ferroelectric material and disposed between the first gate and a channel region, a second gate insulating layer disposed between the second gate and the channel region, a first switching cell connected between the memory cells and a source line, and a second switching cell connected between the memory cells and a bit line. The second switching cell includes a third gate, a fourth gate, a third gate insulating layer not including a data storage layer having the ferroelectric material and the third gate disposed between the third gate and the channel region, and a fourth gate insulating layer disposed between the fourth gate and the channel region.