Abstract: The present invention relates to a polyester resin composition capable of having an excellent shrinkage rate, being heat-shrunk at a low temperature, and improving adhesion properties, without impairing insulation properties in a state of heat-shrinkable films, and a method for preparing the same. The present polyester resin composition comprises: a copolymerized polyester resin including a dicarboxylic acid-derived residue including a residue derived from an aromatic dicarboxylic acid; and a diol-derived residue including a residue derived from 4-(hydroxymethyl)cyclohexyl methyl 4?-(hydroxymethyl)cyclohexane carboxylate, and a residue derived from 4,4-(oxybis(methylene)bis) cyclohexane methanol, an alkali metal compound, and an alkaline earth metal compound, wherein the alkali metal compound and the alkaline earth metal compound are contained in an amount that the content ratio of the alkali metal element/the alkaline earth metal element derived therefrom is 0.01 to 1.

Abstract: A vertical semiconductor device includes a conductive pattern structure, a memory layer, a pillar structure, and second and third insulation patterns. The conductive pattern structure includes conductive patterns and insulation layers, and may include a first portion extending in a first direction and a second portion protruding from a sidewall of the first portion. The conductive pattern structures are arranged in a second direction perpendicular to the first direction to form a trench therebetween. The memory layer is formed on sidewalls of the conductive pattern structures. The pillar structures in the trench, each including a channel pattern and a first insulation pattern formed on the memory layer, are spaced apart from each other in the first direction. The second insulation pattern is formed between the pillar structures. The third insulation pattern is formed between some pillar structures, and has a shape different from a shape of the second insulation pattern.

Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

Abstract: The present disclosure relates to a quantum dot film including a self-assembled block copolymer, and a quantum dot bonded to the block copolymer, wherein the film has pores with an average diameter of 100-3000 nm inside.

Abstract: A vertical semiconductor device includes a conductive pattern structure in which insulation patterns and conductive patterns alternately and repeatedly stacked on the substrate. The conductive pattern structure includes an edge portion having a stair-stepped shape. Each of the conductive patterns includes a pad region corresponding to an upper surface of a stair in the edge portion. A pad conductive pattern is disposed to contact a portion of an upper surface of the pad region. A mask pattern is disposed on an upper surface of the pad conductive pattern. A contact plug penetrates the mask pattern to contact the pad conductive pattern.

Abstract: Disclosed are compounds of Formula A and Formula A-1, or a salt thereof, and pharmaceutical formulations (pharmaceutical compositions) comprising those compounds, or a salt thereof; wherein “R1”, “RA-1”, “R2”, “R3”, and “Het” are defined herein above, which compounds are believed suitable for use in selectively antagonizing the A2a receptors, for example, those found in high density in the basal ganglia. Such compounds and pharmaceutical formulations are believed to be useful in treatment or management of neurodegenerative diseases, for example, Parkinson's disease, or movement disorders arising from use of certain medications used in the treatment or management of Parkinson's disease.

Abstract: Provided are a compound represented by the following Formula I-1 or I-2, and a composition for preventing or treating dementia or Alzheimer's disease, the composition including the compound and a pharmaceutically acceptable carrier:

Abstract: The present invention relates to an MDO thermoresistant heat-shrinkable multilayer film of a copolymer polyester having excellent thermal resistance. In particular, the present invention provides an MDO thermoresistant heat-shrinkable multilayer film that includes multiple skin layers capable of improving thermal resistance formed on a substrate layer capable of providing high shrinkage, and simultaneously has excellent thermal resistance and high shrinkage properties through MD orientation instead of the conventional TD orientation method.

Abstract: A compound represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed. In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A cannula includes at least one opening at a distal tip, and further includes multiple fenestrations that are maintainable in position substantially immediately or slightly beyond a site or point of cannula entry into a vessel. The fenestrations, in combination with the opening(s) at the cannula's distal tip, enable the simultaneous perfusion of blood into the cannulated vessel along multiple directions, including opposing or anti-parallel blood flow directions relative to a central axis of the cannulated vessel. During a medical procedure (e.g., an extra-corporeal membrane oxygenation (ECMO) procedure) blood introduced into a vessel such as the femoral artery by way of the cannula can thus exit the cannula in a manner that provides concurrent blood flow in a first direction towards the heart and a second direction away from the heart.

Abstract: A semiconductor device includes interlayer insulating layers and horizontal structures alternately and repeatedly disposed on a semiconductor substrate, separation structures extending in a direction perpendicular to an upper surface of the semiconductor substrate on the semiconductor substrate, to extend in a first horizontal direction parallel to the upper surface of the semiconductor substrate, and vertical structures disposed between the separation structures. Each of the horizontal structures includes a plurality of semiconductor regions, and the plurality of semiconductor regions of each of the plurality of semiconductor regions include a first semiconductor region and a second semiconductor region sequentially arranged in a direction away from a side surface of a corresponding one of the vertical structures and having different conductivity types.

Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Abstract: Disclosed is a 5G or pre-5G communication system to be provided for supporting a data transmission rate higher than that of a 4G communication system such as LTE. A method for cancelling self-interference in a full-duplex communication system is provided. The method comprises the steps of: cancelling cancellable self-interference components through an analog interference cancellation circuit, and estimating a channel state of an uplink channel and a channel state of a downlink channel on the basis of remaining residual self-interference components; estimating a channel capacity for each of possible beam combinations on the basis of the estimated uplink channel state and downlink channel state; selecting the beam combination having the largest channel capacity from among the possible beam combinations; and cancelling self-interference from a received signal on the basis of the selected beam combination.

Abstract: Defining proximal as toward the heart and distal as away from the heart, a sheath includes a proximal opening and multiple fenestrations maintainable in position slightly beyond a site or point of sheath entry into a vessel by way of an anchoring assembly having a set of radially displaceable anchoring elements configured for abutting a superficial vessel wall. The fenestrations and/or anchoring element(s) are arranged obliquely or non-obliquely around peripheral portions of the sheath. The sheath can receive blood from a pumping source at a proximal opening, and channel the blood toward, to, and through the fenestrations. The fenestrations, in combination with the proximal opening, enable the perfusion of blood into the cannulated vessel in a set of distal directions for perfusing a distal tissue or organ. Flow of blood out of fenestrations directs blood distally towards the limb, head, or other distal region, mitigating the risk of or preventing ischemia.

Abstract: The present invention relates to a composition for preventing or treating obesity containing an ethanolic extract of Ramulus mori as an active ingredient. As the present invention contains an ethanolic extract of Ramulus mori, extracted from natural substance Ramulus mori, as an active ingredient, the present invention may prevent or treat obesity by inhibiting lipid accumulation in adipocytes without any side effects to a human body and inhibiting preadipocytes from being differentiated into adipocytes.

Abstract: A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.

Abstract: A semiconductor device includes a memory cell region including memory cells arranged along channel holes, the channel holes being provided on a substrate to extend in a direction perpendicular to an upper surface of the substrate, and a peripheral circuit region disposed outside of the memory cell region and including low voltage transistors and high voltage transistors. The low voltage transistors include first transistors including a first gate dielectric layer and a first gate electrode layer including a metal, and the high voltage transistors include second transistors including a second gate dielectric layer having a dielectric constant lower than a dielectric constant of the first gate dielectric layer, and a second gate electrode layer including polysilicon.

Abstract: A method for calibrating a value of sampling precision of an optical sensor for tracking includes: reading a precision variance and a setting precision value from a memory device; measuring the sampling precision of the optical sensor under a normal mode to generate an actually measured precision value; calculating a normalized value that is proportional to the actually measured precision value according to the precision variance, the actually measured precision value, and the setting precision value; and, calibrating the actually measured precision value by using the normalized value.

Abstract: A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.