Patents by Inventor Hee-moon Jeong

Hee-moon Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6416172
    Abstract: An ink-jet head device using a stack of piezoelectric bodies, including a nozzle plate having a nozzle, a manifold portion having a restrictor plate that has a restrictor, piezoelectric bodies stacked in multiple layers and interposed between the nozzle plate and the manifold portion to form a chamber for containing ink, each of the piezoelectric bodies having a cavity at the center, common electrodes and driving electrodes alternately interposed one by one between adjacent piezoelectric bodies, a common lead line and a driving line electrically connected to the common electrodes and driving electrodes, respectively, for supplying a voltage to piezoelectric bodies to cause deformation thereof, and a medium interposed at least between the restrictor plate and a piezoelectric body adjacent to the restrictor plate, and between the nozzle plate and a piezoelectric body adjacent to the nozzle plate, the medium deformed corresponding to deformation of the piezoelectric bodies.
    Type: Grant
    Filed: January 10, 2001
    Date of Patent: July 9, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee Moon Jeong, Suk Han Lee, Yong-soo Oh
  • Publication number: 20020047493
    Abstract: A single stage microactuator for multidimensional actuation is provided. The single stage microactuator includes a substrate, a fixed plate electrode, a rectangular stage, a plurality of drive frame parts each having a plurality of drive frames, first spring parts each having a plurality of spring members and a plurality of spring holding members, a plurality of fixed frame parts, drive comb electrodes, fixed comb electrodes, and second spring parts. The microactuator enables multidirectional actuation with only one electrode and can be manufactured by a simple process without a need for an insulation process and coupling of motions in different directions does not occur due to multi-folded spring structure.
    Type: Application
    Filed: July 16, 2001
    Publication date: April 25, 2002
    Inventors: Hee-moon Jeong, Jong Up Jeon
  • Publication number: 20020038984
    Abstract: A single-stage microactuator is provided.
    Type: Application
    Filed: July 18, 2001
    Publication date: April 4, 2002
    Inventors: Hee-Moon Jeong, Jong Up Jeon, Jae-Joon Choi
  • Patent number: 6308573
    Abstract: A 3-dimensional comb structure using an electrical force, and an inertial detection sensor and an actuator both using the 3-dimensional comb structure are provided. In the 3-dimensional comb structure, a suspension structure, which is an inertia body, is separated a predetermined height from a substrate, maintaining the predetermined height from the substrate. A movable comb, which has at least one movable comb finger, protrudes perpendicularly from the suspension structure. A fixed comb, which has at least one fixed comb finger, protrudes perpendicularly from the substrate, in mesh with the movable comb. The 3-dimensional comb structure is driven by a voltage provided from a power supply unit which is connected to the movable comb and the fixed comb.
    Type: Grant
    Filed: January 10, 2000
    Date of Patent: October 30, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki Bang Lee, Jae-joon Choi, Hee-moon Jeong, Kyu-yong Kim, Sung-gyu Kang
  • Patent number: 6277712
    Abstract: A multilayered wafer with a thick sacrificial layer, which is obtained by forming a sacrificial layer of oxidized porous silicon or porous silicon and growing an epitaxial polysilicon layer on the sacrificial layer, and a fabrication method thereof are provided. The multilayered wafer with a thick sacrificial layer adopts a porous silicon layer or an oxidized porous silicon layer as a sacrificial layer such that a sufficient gap can be obtained between a substrate and a suspension structure upon the manufacture of the suspension structure of a semiconductor actuator or a semiconductor inertia sensor. Also, in a fabrication method of the wafer according to the present invention, a p+-type or n+-type wafer doped at a high concentration is prepared for, and then a thick porous silicon layer can be obtained simply by anodic-bonding the surface of the wafer. Also, when polysilicon is grown on a porous silicon layer by an epitaxial process, it is grown faster than when single crystal silicon is grown.
    Type: Grant
    Filed: March 31, 2000
    Date of Patent: August 21, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-gyu Kang, Ki Bang Lee, Jae-joon Choi, Hee-moon Jeong
  • Publication number: 20010007462
    Abstract: An ink-jet head device using a stack of piezoelectric bodies, including a nozzle plate having a nozzle, a manifold portion having a restrictor plate that has a restrictor, piezoelectric bodies stacked in multiple layers and interposed between the nozzle plate and the manifold portion to form a chamber for containing ink, each of the piezoelectric bodies having a cavity at the center, common electrodes and driving electrodes alternately interposed one by one between adjacent piezoelectric bodies, a common lead line and a driving line electrically connected to the common electrodes and driving electrodes, respectively, for supplying a voltage to piezoelectric bodies to cause deformation thereof, and a medium interposed at least between the restrictor plate and a piezoelectric body adjacent to the restrictor plate, and between the nozzle plate and a piezoelectric body adjacent to the nozzle plate, the medium deformed corresponding to deformation of the piezoelectric bodies.
    Type: Application
    Filed: January 10, 2001
    Publication date: July 12, 2001
    Inventors: Hee Moon Jeong, Suk Han Lee, Yong-soo Oh