Abstract: Provided are a plasma generating apparatus using mutual inductive coupling and a substrate treating apparatus including the same. According to an embodiment of the present invention, a plasma generating apparatus includes: an RF power supply providing an RF signal; a plurality of electromagnetic field applying units inducing an electromagnetic field by receiving the RF signal; and a reactance element connected to a ground terminal of the electromagnetic field applying unit, wherein each of the electromagnetic field applying units may include a plurality of mutually-inductively coupled coils.

Abstract: Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.

Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

Abstract: Provided are a plasma generation device, a method of controlling a characteristic of plasma, and a substrate processing device using the same. The plasma generation device includes a first radio frequency (RF) power supply supplying a first RF signal; a chamber supplying a space in which plasma is generated; a plasma source installed at the chamber, wherein the plasma source receives the first RF signal and generates plasma; a second RF power supply supplying a second RF signal; a direct current (DC) bias power supply supplying a DC bias signal; and an electrode arranged in the chamber, wherein the electrode receives an overlap signal obtained by overlapping the second RF signal and the DC bias signal and controls a characteristic of the plasma.

Abstract: Provided are a substrate processing device and a method of handing particles thereof.

Abstract: The present invention relates to an apparatus for generating plasma using a dual plasma source and a substrate treatment apparatus including the same. A plasma generation apparatus according to an embodiment of the present invention includes: an RF power supply configured to supply an RF signal; a plasma chamber configured to provide a space in which plasma is generated; a first plasma source installed at one part of the plasma chamber to generate plasma; and a second plasma source installed at the other part of the plasma chamber to generate plasma, the second plasma source including: a plurality of insulating loops formed along a circumference of the plasma chamber, wherein a gas passage through which a process gas is injected and moved to the plasma chamber is provided in each insulating loop; and a plurality of electromagnetic field appliers coupled to the insulating loops and receiving the RF signal to excite the process gas moved through the gas passage to a plasma state.

Abstract: Provided are a plasma generating apparatus using mutual inductive coupling and a substrate treating apparatus including the same. According to an embodiment of the present invention, a plasma generating apparatus includes: an RF power supply providing an RF signal; a plurality of electromagnetic field applying units inducing an electromagnetic field by receiving the RF signal; and a reactance element connected to a ground terminal of the electromagnetic field applying unit, wherein each of the electromagnetic field applying units may include a plurality of mutually-inductively coupled coils.

Abstract: Provided is a substrate treating apparatus including a first supplying unit, a second supplying unit, a first source, a second source, a gas separation member or the like. Plasma generated from a first gas supplied from a first supplying unit by the first source is used for treating a central area of a substrate. Plasma generated from a second gas supplied from a second supplying unit by the second source is used for treating an edge area of the substrate. A gas separation member prevents plasmas generated respectively from first and second gases from being mixed up.

Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

Abstract: A plasma generating apparatus is provided which includes an RF power which provides an RF signal; a plasma chamber which generates a plasma using the RF signal; a plurality of isolation loops which are formed along a circumference of the plasma chamber; and a plurality of electromagnetic applicators which are respectively coupled with the isolation loops and applies an electromagnetic field to the plasma chamber in response to the RF signal, wherein impedance values of the electromagnetic applicators increase according to an increase in a distance from an input terminal.

Abstract: Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.

Abstract: A silk peptide having neuroprotective and neurofunctional activities and its preparation method are discussed. One method relates to preparing silk protein preferably having neuroprotective activity with weight average molecular weight of 200-100,000 by hydrolysis of silk fibroin; also discussed are a composition for preventing or treating brain disease comprising silk peptide and pharmaceutically acceptable carrier, and a composition for improving brain function.

Abstract: An apparatus for and a method of heat-treating a wafer for use in producing a semiconductor device ensures a desired distribution of surface temperatures across the wafer. Spacers are used to space the wafer above a heat transfer plate. The spacers can be used to adjust the spacing and inclination of the wafer relative to the heat transfer plate by predetermined amounts determined in advance to produce the desired distribution of surface temperatures across the wafer during heat-treatment. With the present invention, wafers can be heat-treated during production using a plurality of bake units disposed in parallel because each of the bake units can be precisely adjusted using the spacers to produce surface temperature distributions similar to a standard surface temperature distribution. Accordingly, the productivity of the semiconductor manufacturing process can be markedly enhanced.

Abstract: Apparatus for controlling the temperature of a wafer in a wafer pre-alignment stage has an air injection member for injecting cooling air towards a chucked wafer and an air guide for guiding a predetermined amount of the injected air towards a portion of the wafer adjacent the edge sensor to compensate for a relatively high temperature condition existing at the region of the edge sensor due to the operation thereof. The air injection member is connected with an air supplier and includes an air injection head having a bottom plate through which a plurality of injection holes extend. The air guide is a flow rate controlling plate which is disposed within the air injection head. The air introduced received by the air injection head is guided towards the region of the edge sensor by the flow rate controlling plate.