Patents by Inventor Hee-Woong Song
Hee-Woong Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9595498Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: GrantFiled: December 7, 2015Date of Patent: March 14, 2017Assignee: SK HYNIX INC.Inventors: Chang Kun Park, Seong Hwi Song, Yong Ju Kim, Sung Woo Han, Hee Woong Song, Ic Su Oh, Hyung Soo Kim, Tae Jin Hwang, Hae Rang Choi, Ji Wang Lee, Jae Min Jang
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Publication number: 20160104684Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: ApplicationFiled: December 7, 2015Publication date: April 14, 2016Inventors: Chang Kun PARK, Seong Hwi SONG, Yong Ju KIM, Sung Woo HAN, Hee Woong SONG, Ic Su OH, Hyung Soo KIM, Tae Jin HWANG, Hae Rang CHOI, Ji Wang LEE, Jae Min JANG
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Patent number: 9209145Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: GrantFiled: November 21, 2014Date of Patent: December 8, 2015Assignee: SK Hynix Inc.Inventors: Chang Kun Park, Seong Hwi Song, Yong Ju Kim, Sung Woo Han, Hee Woong Song, Ic Su Oh, Hyung Soo Kim, Tae Jin Hwang, Hae Rang Choi, Ji Wang Lee, Jae Min Jang
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Patent number: 9190372Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: GrantFiled: November 21, 2014Date of Patent: November 17, 2015Assignee: SK Hynix Inc.Inventors: Chang Kun Park, Seong Hwi Song, Yong Ju Kim, Sung Woo Han, Hee Woong Song, Ic Su Oh, Hyung Soo Kim, Tae Jin Hwang, Hae Rang Choi, Ji Wang Lee, Jae Min Jang
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Publication number: 20150076703Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: ApplicationFiled: November 21, 2014Publication date: March 19, 2015Inventors: Chang Kun PARK, Seong Hwi SONG, Yong Ju KIM, Sung Woo HAN, Hee Woong SONG, Ic Su OH, Hyung Soo KIM, Tae Jin HWANG, Hae Rang CHOI, Ji Wang LEE, Jae Min JANG
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Publication number: 20150076614Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: ApplicationFiled: November 21, 2014Publication date: March 19, 2015Inventors: Chang Kun PARK, Seong Hwi SONG, Yong Ju KIM, Sung Woo HAN, Hee Woong SONG, Ic Su OH, Hyung Soo KIM, Tae Jin HWANG, Hae Rang CHOI, Ji Wang LEE, Jae Min JANG
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Patent number: 8916975Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.Type: GrantFiled: June 29, 2009Date of Patent: December 23, 2014Assignee: Hynix Semiconductor Inc.Inventors: Chang Kun Park, Seong Hwi Song, Yong Ju Kim, Sung Woo Han, Hee Woong Song, Ic Su Oh, Hyung Soo Kim, Tae Jin Hwang, Hae Rang Choi, Ji Wang Lee, Jae Min Jang
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Patent number: 8461878Abstract: The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.Type: GrantFiled: November 19, 2012Date of Patent: June 11, 2013Assignee: SK Hynix Inc.Inventors: Ji-Wang Lee, Yong-Ju Kim, Sung-Woo Han, Hee-Woong Song, Ic-Su Oh, Hyung-Soo Kim, Tae-Jin Hwang, Hae-Rang Choi, Jae-Min Jang, Chang-Kun Park
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Patent number: 8436666Abstract: An interface apparatus for a semiconductor integrated circuit and an interfacing method thereof controls the VOX of differential signals to a target level in response to the differential signals being outputted by an output block. The interface apparatus for a semiconductor integrated circuit includes an output block configured to output differential signals output by an internal circuit a detector configured to detect a timing error of the differential signals; and a controller configured to control a timing of the differential signals output by the internal circuit according to a detection result of the detector.Type: GrantFiled: December 30, 2009Date of Patent: May 7, 2013Assignee: Hynix Semiconductor Inc.Inventors: Ji-Wang Lee, Yong-Ju Kim, Hee-Woong Song, Ic-Su Oh, Hyung-Soo Kim, Tae-Jin Hwang, Hae-Rang Choi, Jae-Min Jang, Chang-Kun Park
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Patent number: 8373456Abstract: The domain crossing circuit of a semiconductor memory apparatus for improving a timing margin includes a sampler that provides a sampling internal signal generated by delaying an internal input signal by a predetermined time in response to a clock and an edge information signal that defines an output timing of the sampling internal signal and an output stage that allows the sampling internal signal to be synchronized with the clock in response to the edge information signal to be output as a final output signal.Type: GrantFiled: June 17, 2009Date of Patent: February 12, 2013Assignee: Hynix Semiconductor Inc.Inventors: Hae Rang Choi, Yong Ju Kim, Sung Woo Han, Hee Woong Song, Ic Su Oh, Hyung Soo Kim, Tae Jin Hwang, Ji Wang Lee, Jae Min Jang, Chang Kun Park
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Patent number: 8339159Abstract: The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.Type: GrantFiled: August 13, 2009Date of Patent: December 25, 2012Assignee: Hynix Semiconductor Inc.Inventors: Ji-Wang Lee, Yong-Ju Kim, Sung-Woo Han, Hee-Woong Song, Ic-Su Oh, Hyung-Soo Kim, Tae-Jin Hwang, Hae-Rang Choi, Jae-Min Jang, Chang-Kun Park
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Patent number: 8283804Abstract: A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.Type: GrantFiled: December 11, 2008Date of Patent: October 9, 2012Assignee: SK hynix Inc.Inventors: Hyung-Soo Kim, Yong-Ju Kim, Sung-Woo Han, Hee-Woong Song, Ic-Su Oh, Tae-Jin Hwang, Hae-Rang Choi, Ji-Wang Lee, Jae-Min Jang, Chang-Kun Park
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Patent number: 8278981Abstract: A variable delay circuit includes at least a fixed delay unit, a first selection unit, and variable delay unit. The fixed delay unit receives an input signal and a first delay selection signal indicative of a first delay, and outputs a first delayed signal that is substantially the input signal delayed by the first delay. The first selection unit receives the input signal, the first delayed signal, and a second delay selection signal, and outputs either the input signal or the first delayed signal based on the second delay selection signal to the variable delay unit. The variable delay unit also receives a third delay selection signal indicative of a third delay, and outputs a output signal that is substantially the output signal of the selection unit delayed by a third delay. The first delay is 0 or X multiples of M delay units. The third delay is a delay selected from 0 to N delay units.Type: GrantFiled: December 14, 2009Date of Patent: October 2, 2012Assignee: Hynix Semiconductor Inc.Inventors: Hae-Rang Choi, Yong-Ju Kim, Sung-Woo Han, Hee-Woong Song, Ic-Su Oh, Hyung-Soo Kim, Tae-Jin Hwang, Ji-Wang Lee, Jae-Min Jang, Chang-Kun Park
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Patent number: 8265218Abstract: A phase detection circuit includes a phase frequency detector for comparing a first input signal and a second input signal and outputting a first phase comparison signal and a second phase comparison signal, and a sensing circuit for sensing a pulse width difference between the first phase comparison signal and the second phase comparison signal and outputting phase detection signals which have different logic values.Type: GrantFiled: January 23, 2008Date of Patent: September 11, 2012Assignee: SK hynix Inc.Inventors: Yong Ju Kim, Kun Woo Park, Jong Woon Kim, Hee Woong Song, Ic Su Oh, Hyung Soo Kim, Tae Jin Hwang
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Patent number: 8213531Abstract: An apparatus for transmitting a signal in a semiconductor integrated circuit includes a multilevel transmission control block that outputs a plurality of bits of an input signal in serial or parallel according to whether a multilevel transmission operation is performed or not, and a signal processing block that selectively performs the multilevel transmission operation according to a form of the input signal, which are output in serial or parallel from the multilevel transmission control block.Type: GrantFiled: December 28, 2007Date of Patent: July 3, 2012Assignee: SK hynix, Inc.Inventors: Hyung Soo Kim, Kun Woo Park, Yong Ju Kim, Jong Woon Kim, Hee Woong Song, Ic Su Oh, Tae Jin Hwang
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Publication number: 20120161859Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator, and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.Type: ApplicationFiled: February 22, 2012Publication date: June 28, 2012Inventors: Yong-Ju Kim, Sung-Woo Han, Hee-Woong Song, Ic-Su Oh, Hyung-Soo Kim, Tae-Jin Hwang, Hae-Rang Choi, Ji-Wang Lee, Jae-Min Jang, Chang-Kun Park
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Patent number: 8189400Abstract: A data alignment circuit of a semiconductor memory apparatus for receiving and aligning parallel data group includes a first control unit, a second control unit, a first alignment unit and a second alignment unit. The first alignment unit generates a first control signal group in response to an address group, a clock signal, and a latency signal. The second control unit generates a second control signal group in response to the address group, the clock signal, and the latency signal. The first alignment unit aligns the parallel data group as a first serial data group in response to the first control signal group. The second alignment unit aligns the parallel data group as a second serial data group in response to the second control signal group.Type: GrantFiled: December 24, 2009Date of Patent: May 29, 2012Assignee: Hynix Semiconductor Inc.Inventors: Hyung Soo Kim, Yong Ju Kim, Sung Woo Han, Hee Woong Song, Ic Su Oh, Tae Jin Hwang, Hae Rang Choi, Ji Wang Lee, Jae Min Jang, Chang Kun Park
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Patent number: 8171189Abstract: A semiconductor apparatus includes a clock input buffer, an asynchronous data input buffer, and a synchronous data input buffer. The clock input buffer is configured to buffer an external clocks in order to generate an internal clock. The asynchronous data input buffer is configured to buffer data input through a data pad and output the buffered data. The synchronous data input buffer is configured to be synchronous with the internal clock to buffer the buffered data. The semiconductor apparatus is arranged so that the length of a line for transferring the internal clock to the synchronous data input buffer and the length of a line for transferring the buffered data to the synchronous data input buffer are substantially equal to each other.Type: GrantFiled: December 29, 2009Date of Patent: May 1, 2012Assignee: Hynix Semiconductor Inc.Inventors: Ji Wang Lee, Hee Woong Song, Tae Jin Hwang
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Patent number: 8149953Abstract: A semiconductor integrated circuit equipped with an equalizer which has a circuit structure simpler than that of a related equalizer according to an FFE scheme or a DFE scheme and is capable of preventing a noise component from being amplified. The data receiver includes a plurality of receiver units, wherein each receiver unit includes a plurality of level detectors which detect different levels, and an encoder, in which the level detectors receive data according to a clock signal having a predetermined phase difference and perform an amplification operation including an equalization function based on feedback data, thereby outputting an amplification signal, and wherein level detectors of one receiver unit receive an amplification signal, as the feedback data, from level detectors of another receiver unit that receives a first clock signal having a phase more advanced than a phase of a second clock signal received in one receiver unit.Type: GrantFiled: July 22, 2008Date of Patent: April 3, 2012Assignee: Hynix Semiconductor, Inc.Inventors: Hyung-Soo Kim, Kun-Woo Park, Yong-Ju Kim, Hee-Woong Song, Ic-Su Oh, Tae-Jin Hwang, Hae-Rang Choi, Ji-Wang Lee
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Patent number: 8143940Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.Type: GrantFiled: December 31, 2008Date of Patent: March 27, 2012Assignee: Hynic Semiconductor Inc.Inventors: Yong-Ju Kim, Sung-Woo Han, Hee-Woong Song, Ic-Su Oh, Hyung-Soo Kim, Tae-Jin Hwang, Hae-Rang Choi, Ji-Wang Lee, Jae-Min Jang, Chang-Kun Park