Abstract: A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region. The pair of data lines extend along a direction that the chip pad region of the semiconductor circuit substrate extends. The pair of data lines are arranged to be adjacent to each other and receive a pair of differential data signals. A power supply line is formed on the semiconductor circuit substrate at the other side of the chip pad region. The power supply line extends along the direction that the chip pad region of the semiconductor circuit substrate extends, and the power supply line receives power.

Abstract: Data transmitter includes a first and second output nodes terminated to a first level, a controller configured to generate an off signal that is activated by logically combining first and second data during a low-power mode, a first driver configured to drive the first or second output node to a second level in response to the first data and a second driver configured to drive the first or second output node to the second level with a driving force different from that of the first driver in response to the second data, the second driver being turned off when the off signal is activated.

Abstract: A buffer circuit of a semiconductor memory apparatus includes a buffering section configured to increase or decrease a voltage level of an output node by comparing a voltage level of an input signal with a voltage level of a reference voltage. A voltage compensation section applies a voltage to the output node in proportion to a variation of the reference voltage when the level of the reference voltage is lower than a target level.

Abstract: A power noise detecting device includes a plurality of power lines, and a power noise detecting part configured to detect power noise by rectifying voltages of the plurality of power lines and converting the rectified voltages into effective voltages.

Abstract: The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.

Abstract: A receiver of a semiconductor memory apparatus includes a first input transistor configured to be turned ON when an input signal is equal to or more than a predetermined level; a second input transistor configured to be turned ON when the input signal is equal to or less than the predetermined level; a first output node voltage control unit configured to increase a voltage level of an output node when the first input transistor is turned ON; a second output node voltage control unit configured to decrease the voltage level of the output node when the second input transistor is turned ON; a third input transistor configured to increase the voltage level of the output node when an inversion signal of the input signal is equal to or less than the predetermined voltage level; and a fourth input transistor configured to decrease the voltage level of the output node when the inversion signal of the input signal is equal to or more than the predetermined voltage level.

Abstract: A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.

Abstract: A phase locked loop circuit and a control method thereof. A phase locked loop circuit includes a phase detecting and correcting block configured to detect a phase difference between a reference clock and a feedback clock, and to correct the phase of the feedback clock such that the phase of the reference clock and the phase of the feedback clock are consistent with each other, and an initial locking level setting block configured to set a locking level in a normal operation mode in the phase detecting and correcting block. The initial locking level setting block includes a digital-to-analog converting unit configured to generate an analog voltage according to a digital code corresponding to the set frequency, and charges the capacitive element with the analog voltage, and a switching unit configured to connect the digital-to-analog converting unit and the capacitive element in response to an input of an operation start signal.

Abstract: A PLL circuit includes a phase detector that compares the phase of an input clock with the phase of a feedback clock so as to generate pull-up and pull-down control signals. A low pass filter pumps a voltage in response to the pull-up and pull-down control signals, and removes a noise component from the pumped voltage so as to output a control voltage. A buffer that controls voltage so as to generate a bias voltage having a smaller swing width than the control voltage. A voltage controlled oscillator receives the bias voltage and oscillates an output clock. A clock divider divides the frequency of the output clock at a predetermined ratio so as to generate the feedback clock.

Abstract: A data receiver of a semiconductor integrated circuit includes an amplifier that outputs an amplified signal by detecting and amplifying received data using equalization function according to feedback data, a detecting unit that detects a period when data is not received in the amplifier and outputs a detecting signal, and an equalization function control unit that stops the equalization function of the amplifier in response to the detecting signal.

Abstract: A semiconductor device includes transmission lines for conveying signals and transition detectors, each of which checks whether a transmission signal on each of the plurality of transmission lines is transited. If the signal is transited, its transition shape is detected. A signal mode determining unit determines signal transmission modes between adjacent transmission lines in response to output signals from the plurality of transition detectors. Delay units are coupled to the respective transmission lines for adjusting transmission delays of the transmission signals depending on corresponding output signal from the signal mode determining units.

Abstract: A power supply apparatus of a semiconductor integrated circuit includes a power control device that detects a level of power supplied from the outside and outputs a control signal as information on the detected level, and a power supply device that controls an internal resistance component in response to an input of the control signal, controls the level of the power supplied from the outside, and supplies the power having the controlled level to circuit blocks.

Abstract: A delay locked loop circuit includes a phase detecting unit for detecting a phase difference between a reference clock signal and a feedback clock signal, and for producing a phase difference detection signal, a code generating unit for producing a digital code signal according to the phase difference detection signal, a control current generating unit for generating a control current using the digital code signal, and a current controlled delay line for producing the feedback clock signal by delaying the reference clock signal by a delay time varied by the control current.

Abstract: An apparatus for removing crosstalk in a semiconductor memory device includes pads for receiving externally provided signals, transmission lines for delivering the signals received by each of the pads to corresponding elements in the apparatus, and capacitors, coupled between adjacent ones of the lines, for adjusting the transmission delay of the signals depending on a signal transmission mode between the adjacent lines.

Abstract: A voltage regulator with an adaptive bandwidth, including a first buffer chain, a voltage generating unit, a trimming capacitor unit, a second buffer chain, and a control unit. The first buffer chain delays a clock signal using an external voltage as a supply voltage. The voltage generating unit generates a regulated voltage on the basis a reference voltage. The trimming capacitor unit controls a load capacitance of the voltage generating unit. The second buffer chain delays the clock signal using the regulated voltage as a supply voltage. The control unit adjusts the load capacitance by detecting a delay difference of clocks output from the first and second buffer chains.

Abstract: A voltage adjustment circuit of a semiconductor memory apparatus includes a control voltage generating unit configured to distribute an external voltage for selectively outputting a plurality of distribution voltages as a control voltage in response to a control signal, the plurality of the distribution voltages each have different voltage levels, a comparing unit configured to include a voltage supply unit configured to control an external voltage supplied to a first node and a second node if a level of an output voltage is higher than a level of a reference voltage in response to a level of the control voltage, and a detection signal generating unit configured to drop potential levels of the first and second nodes according to the levels of the output voltage and the reference voltage, and to output the potential level of the second node as a detection signal, and a voltage generating unit configured to drive the external voltage according to a potential level of the detection signal and to output the exter

Abstract: An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit.

Abstract: A semiconductor integrated circuit includes a voltage supplying unit that supplies a first regulated voltage and a second regulated voltage by using a first reference voltage and a second reference voltage, respectively, and a clock buffer unit that supplies an output clock clocking within a range of the first regulated voltage and the second regulated voltage.

Abstract: A duty cycle correction circuit includes a phase splitter configured to control a phase of a DLL clock signal to generate a rising clock signal and a falling clock signal, a clock delay unit configured to delay the rising clock signal and the falling clock signal in response to control signals to generate a delayed rising clock signal and a delayed falling clock signal, a duty ratio correction unit configured to generate a correction rising clock signal and a correction falling clock signal that toggle in response to an edge timing of the delayed rising clock signal and the delayed falling clock signal, and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal to generate the control signals.

Abstract: An apparatus for supplying power in a semiconductor integrated circuit includes a plurality of power lines, each supplying external power to an interior of the semiconductor integrated circuit, and at least one decoupling capacitor set connected to the plurality of power lines and having a resistance value configured to be variable according to a bias voltage.