Patents by Inventor Hee Hyun Nam

Hee Hyun Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11899970
    Abstract: A memory device includes; a first memory of first type, a second memory of second type different from the first type, and a memory controller. The memory controller receives an access request and workload information related to work of an external processor, processes the access request using the workload information, and accesses at least one of the first memory and the second memory in response to the access request.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: February 13, 2024
    Inventors: Wonseb Jeong, Hee Hyun Nam, Younggeon Yoo, Jeongho Lee, Younho Jeon, Ipoom Jeong, Chanho Yoon
  • Patent number: 11742046
    Abstract: Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: August 29, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeongho Lee, Kwangjin Lee, Hee Hyun Nam, Jaeho Shin, Youngkwang Yoo
  • Publication number: 20230100573
    Abstract: A memory device includes; a first memory of first type, a second memory of second type different from the first type, and a memory controller. The memory controller receives an access request and workload information related to work of an external processor, processes the access request using the workload information, and accesses at least one of the first memory and the second memory in response to the access request.
    Type: Application
    Filed: May 11, 2022
    Publication date: March 30, 2023
    Inventors: WONSEB JEONG, HEE HYUN NAM, YOUNGGEON YOO, JEONGHO LEE, YOUNHO JEON, IPOOM JEONG, CHANHO YOON
  • Patent number: 11307918
    Abstract: A memory system for performing a recovery operation is provided. A memory system includes a memory device including a plurality of memory cells constituting a plurality of sub-sets, and a memory controller for controlling the memory device. The memory controller controls the memory device to manage a read count indicating a number of read operations performed by the memory device for each of the plurality of sub-sets, and to perform a recovery operation on a sub-set, among the plurality of sub-sets, based on the read count corresponding to the read count. Each of a plurality of sub-sets includes a plurality of pages. Each of the plurality of pages is a unit in which a read operation is performed in the plurality of memory cells.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: April 19, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun chu Oh, Young-Sik Kim, Hee-hyun Nam, Young-geun Lee, Young-jin Cho
  • Publication number: 20220068424
    Abstract: Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.
    Type: Application
    Filed: May 12, 2021
    Publication date: March 3, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jeongho LEE, Kwangjin LEE, Hee Hyun NAM, Jaeho SHIN, Youngkwang YOO
  • Patent number: 11226823
    Abstract: A memory module includes a device controller that communicates with a host device based on a first interface including a first clock signal, a first data signal, and a first data strobe signal and operates in one of a first operation mode or a second operation mode depending on an operation mode control value from the host device, and a memory device that communicates with the device controller based on a second interface including a second data signal and a second data strobe signal. The device controller includes a logic circuit that transmits a predetermined training result value to the host device depending on a training control value from the host device, when a training is performed on a third interface being a virtual interface recognized by the host device in the first operation mode.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: January 18, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Younho Jeon, Youngjin Cho, Hee Hyun Nam, Hyo-Deok Shin
  • Publication number: 20210081204
    Abstract: A memory module includes a device controller that communicates with a host device based on a first interface including a first clock signal, a first data signal, and a first data strobe signal and operates in one of a first operation mode or a second operation mode depending on an operation mode control value from the host device, and a memory device that communicates with the device controller based on a second interface including a second data signal and a second data strobe signal. The device controller includes a logic circuit that transmits a predetermined training result value to the host device depending on a training control value from the host device, when a training is performed on a third interface being a virtual interface recognized by the host device in the first operation mode.
    Type: Application
    Filed: May 20, 2020
    Publication date: March 18, 2021
    Inventors: YOUNHO JEON, YOUNGJIN CHO, HEE HYUN NAM, HYO-DEOK SHIN
  • Patent number: 10929064
    Abstract: An operational method of a memory module is provided. The method includes receiving, from an external of the memory module, a first command and a first address in synchronization with clock signals. Status information is output through a signal line, when first data corresponding the first address is available in a data buffer in response to the first command. A second command in synchronization with the clock signals after the transmitting the status information is received from the external of the memory module, a second command. In response to the second command, the first data being available in the data buffer is output through data lines.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: February 23, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngjin Cho, Hee Hyun Nam, Hyo-Deok Shin, Junghwan Ryu
  • Patent number: 10789019
    Abstract: A storage device includes a nonvolatile memory and a controller. The controller includes a job manager circuit and a processor. The job manager circuit manages a first-type job associated with the nonvolatile memory, and the processor processes a second-type job associated with the nonvolatile memory. The job manager circuit manages the first-type job without intervention of the processor. The processor provides a management command to the job manager circuit in response to a notification received from the job manager circuit, such that the second-type job is processed.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: September 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youngsik Kim, Jinwoo Kim, Hee Hyun Nam, Kyungbo Yang, Ji-Seung Youn, Younggeun Lee
  • Patent number: 10698781
    Abstract: A semiconductor memory module includes a volatile memory device, a nonvolatile memory device, data buffers, and a controller. The controller outputs first data read from the volatile memory device or the nonvolatile memory device to an external device through the data buffers, and writes second data received from the external device through the data buffers in the volatile memory device or the nonvolatile memory device. The controller performs a failover operation depending on a failover request that includes fail information indicating a position of a failed data buffer among the data buffers. In the failover operation, the controller conveys third data associated with the failed data buffer to the external device through a failover data buffer among the data buffers.
    Type: Grant
    Filed: June 3, 2018
    Date of Patent: June 30, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Hee Hyun Nam
  • Patent number: 10671299
    Abstract: The nonvolatile memory module includes at least one nonvolatile memory, and a device controller including a RAM to store data exchanged between a host and the at least one nonvolatile memory and a DIMM controller to control data exchange between the RAM and the at least one nonvolatile memory. An allocation for an access area at an access to the RAM is performed during a write transaction in which data is recorded at the RAM and is released during a read transaction of the recorded data.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: June 2, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee Hyun Nam, Youngjin Cho
  • Publication number: 20200159602
    Abstract: A memory system for performing a recovery operation is provided. A memory system includes a memory device including a plurality of memory cells constituting a plurality of sub-sets, and a memory controller for controlling the memory device. The memory controller controls the memory device to manage a read count indicating a number of read operations performed by the memory device for each of the plurality of sub-sets, and to perform a recovery operation on a sub-set, among the plurality of sub-sets, based on the read count corresponding to the read count. Each of a plurality of sub-sets includes a plurality of pages. Each of the plurality of pages is a unit in which a read operation is performed in the plurality of memory cells.
    Type: Application
    Filed: October 7, 2019
    Publication date: May 21, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun chu Oh, Young-Sik Kim, Hee-hyun Nam, Young-geun Lee, Young-jin Cho
  • Patent number: 10445014
    Abstract: A method of operating a memory controller is provided. The method of operating a memory controller according to an exemplary embodiment of the present inventive concepts includes sequentially receiving, by the memory controller, first data segments each having a first size from a host, sequentially storing, by the memory controller, the first data segments in the buffer until a sum of sizes of changed data among data stored in a buffer included in the memory controller is a second size, and programming, by the memory controller, the changed data having the second size in a memory space of a non-volatile memory as a second data segment.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: October 15, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee Hyun Nam, Young Sik Kim, Jin Woo Kim, Young Jo Park, Jae Geun Park, Young Jin Cho
  • Publication number: 20190303045
    Abstract: An operational method of a memory module is provided. The method includes receiving, from an external of the memory module, a first command and a first address in synchronization with clock signals. Status information is output through a signal line, when first data corresponding the first address is available in a data buffer in response to the first command. A second command in synchronization with the clock signals after the transmitting the status information is received from the external of the memory module, a second command. In response to the second command, the first data being available in the data buffer is output through data lines.
    Type: Application
    Filed: June 17, 2019
    Publication date: October 3, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngjin CHO, Hee Hyun NAM, Hyo-Deok SHIN, Junghwan RYU
  • Patent number: 10403332
    Abstract: Provided are a memory device and a memory system including the same. The memory device may include a first memory rank including at least one first memory chip, a memory controller configured to provide a command to the first memory rank, at least one data buffer configured to buffer data input to the at least one first memory chip or being output from the at least one first memory chip, and a second memory rank connected to the first memory rank and comprising at least one second memory chip. The first memory rank may provide training data and a data strobe signal to the second memory rank based on a data training command from the memory controller without the training data and the data strobe signal passing through the data buffer. The second memory rank may determine a delay of the data strobe signal based on the training data being detected by the second memory rank.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: September 3, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young Geun Lee, Young Jin Cho, Hee Hyun Nam, Hyo Deok Shin, Young Kwang Yoo
  • Publication number: 20190250834
    Abstract: The nonvolatile memory module includes at least one nonvolatile memory, and a device controller including a RAM to store data exchanged between a host and the at least one nonvolatile memory and a DIMM controller to control data exchange between the RAM and the at least one nonvolatile memory. An allocation for an access area at an access to the RAM is performed during a write transaction in which data is recorded at the RAM and is released during a read transaction of the recorded data.
    Type: Application
    Filed: July 24, 2018
    Publication date: August 15, 2019
    Inventors: Hee Hyun Nam, Youngjin Cho
  • Patent number: 10331378
    Abstract: A method of operating a memory module can include receiving, at the memory module, an active command and an associated row address that indicates that the active command is directed to a volatile memory device included in the memory module or to a non-volatile memory device included in the memory module. The volatile memory device or the non-volatile memory device can be activated based on the associated row address in response to the active command. Status information can be provided at the memory module indicating readiness of the memory module for receipt of an operation command associated with the active command and the associated row address.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: June 25, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngjin Cho, Hee Hyun Nam, Hyo-Deok Shin, Junghwan Ryu
  • Publication number: 20190138413
    Abstract: A semiconductor memory module includes a volatile memory device, a nonvolatile memory device, data buffers, and a controller. The controller outputs first data read from the volatile memory device or the nonvolatile memory device to an external device through the data buffers, and writes second data received from the external device through the data buffers in the volatile memory device or the nonvolatile memory device. The controller performs a failover operation depending on a failover request that includes fail information indicating a position of a failed data buffer among the data buffers. In the failover operation, the controller conveys third data associated with the failed data buffer to the external device through a failover data buffer among the data buffers.
    Type: Application
    Filed: June 3, 2018
    Publication date: May 9, 2019
    Inventor: HEE HYUN NAM
  • Publication number: 20190004869
    Abstract: A storage device includes a nonvolatile memory and a controller. The controller includes a job manager circuit and a processor. The job manager circuit manages a first-type job associated with the nonvolatile memory, and the processor processes a second-type job associated with the nonvolatile memory. The job manager circuit manages the first-type job without intervention of the processor. The processor provides a management command to the job manager circuit in response to a notification received from the job manager circuit, such that the second-type job is processed.
    Type: Application
    Filed: December 27, 2017
    Publication date: January 3, 2019
    Inventors: YOUNGSIK KIM, JINWOO KIM, HEE HYUN NAM, KYUNGBO YANG, JI-SEUNG YOUN, YOUNGGEUN LEE
  • Patent number: 10048878
    Abstract: The nonvolatile memory module includes at least one nonvolatile memory, and a device controller including a RAM to store data exchanged between a host and the at least one nonvolatile memory and a DIMM controller to control data exchange between the RAM and the at least one nonvolatile memory. An allocation for an access area at an access to the RAM is performed during a write transaction in which data is recorded at the RAM and is released during a read transaction of the recorded data.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: August 14, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hee Hyun Nam, Youngjin Cho