Abstract: The present disclosure relates to a novel ruthenium oxide, a method of preparing the same, and a catalyst for selective hydrogenation of an aromatic compound or an unsaturated compound including the ruthenium oxide.

Abstract: The present disclosure relates to a novel ruthenium oxide, a method of preparing the same, and a catalyst for selective hydrogenation of an aromatic compound or an unsaturated compound including the ruthenium oxide.

Abstract: The present invention relates to: a labeling dye having excellent fluorescent intensity and photostability; and a kit.

Abstract: An organic light emitting display device includes a substrate including a white pixel region, a blue color filter pattern in a first region of the white pixel region, an overcoat layer covering the blue color filer pattern and including a micro-lens, a first electrode on the overcoat layer, an organic emitting layer covering the first electrode, and a second electrode covering the organic emitting layer.

Abstract: The present invention relates to: a labeling dye having excellent fluorescent intensity and photostability; and a kit.

Abstract: An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern.

Abstract: Disclosed are an organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a thin-film transistor including source and drain electrodes, a first electrode formed by extending the source or drain electrode, a passivation layer and a bank insulation layer on the thin-film transistor configured to expose the first electrode so as to define an emission area, an organic light-emitting layer provided on the first electrode, and a second electrode configured to cover the organic light-emitting layer. The source or drain electrode includes a plurality of layers and the first electrode is integrally formed with any one layer portion of the source or drain electrode.

Abstract: An organic light emitting display device includes a substrate including a white pixel region, a blue color filter pattern in a first region of the white pixel region, an overcoat layer covering the blue color filer pattern and including a micro-lens, a first electrode on the overcoat layer, an organic emitting layer covering the first electrode, and a second electrode covering the organic emitting layer.

Abstract: An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern.

Abstract: An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern.

Abstract: A method of fabricating an array substrate including forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a gate electrode corresponding to a central portion of the oxide semiconductor layer; forming source and drain areas having conductive properties in the oxide semiconductor layer by irradiating X-rays or UV rays to the oxide semiconductor layer exposed outside the gate electrode; forming an inter insulating layer on the gate electrode and having first contact holes that expose the source and drain areas; and forming source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first contact holes, respectively.

Abstract: Disclosed are an organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a thin-film transistor including source and drain electrodes, a first electrode formed by extending the source or drain electrode, a passivation layer and a bank insulation layer on the thin-film transistor configured to expose the first electrode so as to define an emission area, an organic light-emitting layer provided on the first electrode, and a second electrode configured to cover the organic light-emitting layer. The source or drain electrode includes a plurality of layers and the first electrode is integrally formed with any one layer portion of the source or drain electrode.

Abstract: An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank, thereby increasing lifespan. The organic light-emitting display device includes a first electrode protective pattern.

Abstract: A method of fabricating an array substrate including forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a gate electrode corresponding to a central portion of the oxide semiconductor layer; forming source and drain areas having conductive properties in the oxide semiconductor layer by irradiating X-rays or UV rays to the oxide semiconductor layer exposed outside the gate electrode; forming an inter insulating layer on the gate electrode and having first contact holes that expose the source and drain areas; and forming source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first contact holes, respectively.

Abstract: A method of fabrication an array substrate which includes foaming an oxide semiconductor layer on a substrate; forming a gate insulating layer corresponding to a central portion of the oxide semiconductor layer; forming a first reactive metallic pattern and second reactive metallic patterns on the gate insulating layer and portions of the oxide semiconductor layer exposed outside the gate insulating layer, respectively; forming a gate electrode on the first reactive metallic pattern; forming source and drain areas having conductive properties in the oxide semiconductor layer by performing heat treatment such that materials of the second reactive metallic patterns are diffused into the oxide semiconductor layer contacting the second reactive metallic patterns; forming an inter insulating layer on the gate electrode and having first contact holes that expose the second reactive metallic patterns; and forming source and drain electrodes on the inter insulating layer and contacting the second reactive metallic pa

Abstract: A method of fabrication an array substrate which includes foaming an oxide semiconductor layer on a substrate; forming a gate insulating layer corresponding to a central portion of the oxide semiconductor layer; forming a first reactive metallic pattern and second reactive metallic patterns on the gate insulating layer and portions of the oxide semiconductor layer exposed outside the gate insulating layer, respectively; forming a gate electrode on the first reactive metallic pattern; forming source and drain areas having conductive properties in the oxide semiconductor layer by performing heat treatment such that materials of the second reactive metallic patterns are diffused into the oxide semiconductor layer contacting the second reactive metallic patterns; forming an inter insulating layer on the gate electrode and having first contact holes that expose the second reactive metallic patterns; and forming source and drain electrodes on the inter insulating layer and contacting the second reactive metallic pa

Abstract: An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer and contacting the oxide semiconductor layer, wherein a first reflectance of the first semiconductor layer is greater than a second semiconductor layer.

Abstract: A method of fabrication an array substrate includes forming an oxide semiconductor layer on a substrate; sequentially forming a gate insulating layer and a gate electrode corresponding to a central portion of the oxide semiconductor layer; forming source and drain areas having conductive properties in the oxide semiconductor layer by performing hydrogen plasma treatment; forming barrier layers on the source and drain areas, the barrier layer having a first thickness; forming an inter insulating layer on the gate electrode and having first contact holes that expose the barrier layers; and forming source and drain electrodes on the inter insulating layer and contacting the barrier layers through the first contact holes, respectively.

Abstract: An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.

Abstract: An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.