Patents by Inventor Heimo Hofer

Heimo Hofer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
    Publication number: 20040031987
    Abstract: A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in each case provided in the semiconductor substrate. According to the invention, the source zone and/or the channel zone are formed at the earliest after the introduction of the trenches into the semiconductor substrate by implantation and diffusion.
    Type: Application
    Filed: March 19, 2003
    Publication date: February 19, 2004
    Inventors: Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Polzl, Heimo Hofer