Abstract: An optical arrangement is disclosed wherein an entering beam is converted into an exiting beam having a total cross section of light which is linearly polarized essentially in the radial direction by rotation. For this purpose, rasters of half-wave plates (41, 42, 4i), a combination of birefringent quarter-wave plate 420 and a circular plate 430 is suggested in combination with a conical polarizer 21′. This arrangement is preferably utilized in the illumination portion of a microlithographic projection exposure system. It is important that the arrangement be mounted behind all asymmetric or polarizing component elements 103a.

Abstract: A projection objective includes a first lens group (G1) of positive refractive power, a second lens group (G2) of negative refractive power and at least one further lens group of positive refractive power in which a diaphragm is mounted. The first lens group (G1) includes exclusively lenses of positive refractive power. The number of lenses of positive refractive power (L101 to L103; L201, L202) of the first lens group (G1) is less than the number of lenses of positive refractive power (L116 to L119; L215 to L217) which are mounted forward of the diaphragm of the further lens group (G5).

Abstract: The invention concerns an illumination system, particularly for microlithography with wavelengths ≦193 nm, comprising a light source, a first optical component, a second optical component, an image plane and an exit pupil. The first optical component transforms the light source into a plurality of secondary light sources being imaged by the second optical component in said exit pupil. The first optical component comprises a first optical element having a plurality of first raster elements, which are imaged into said image plane producing a plurality of images being superimposed at least partially on a field in said image plane. The first raster elements deflect incoming ray bundles with first deflection angles, wherein at least two of the first deflection angles are different. The first raster elements are preferably rectangular, wherein the field is a segment of an annulus.

Abstract: In the case of an objective (10), in particular of an objective for a semiconductor lithography projection exposure machine, having a plurality of optical elements supported in mounts, the last optical element (1) in the beam direction is connected directly to the penultimate optical element (2) in a mount-free and exchangeable fashion. The connection can be performed by wringing a thin equidistant plate as last optical element (1).

Abstract: An optical arrangement is disclosed wherein an entering beam is converted into an exiting beam having a total cross section of light which is linearly polarized essentially in the radial direction by rotation. For this purpose, rasters of half-wave plates (41, 42, 4i), a combination of birefringent quarter-wave plate 420 and a circular plate 430 is suggested in combination with a conical polarizer 21′. This arrangement is preferably utilized in the illumination portion of a microlithographic projection exposure system. It is important that the arrangement be mounted behind all asymmetric or polarizing component elements 103a.

Abstract: A REMA objective is realized by introduction of a few (1 to 5 units) aspherical surfaces of high-quality correction with a low number of lenses (no more than 10), and low path in glass (maximum 25% to 30%) of the object-reticle distance, thus enhancing efficiency.

Abstract: Partial objective for illumination of an image field in an illuminating device of a microlithographic projection exposure apparatus, arranged between a aperture plane and an image plane. The partial objective comprises a first lens group and a second lens group with a lens with a first aspheric lens surface. The second lens group has at least a first lens with negative refractive power and at least a second lens with positive refractive power. The maximum field height Yimmax within the image field is at least 40 mm; the image-side numerical aperture is at least 0.15. The distribution of the chief ray angles PF over the field heights Yim within the image field is given by a pupil function PF(Yim), which consists of a linear contribution c1·Yim and a non-linear contribution PFNL(Yim), the non-linear contribution PFNL(Yim) being at least +15 mrad for the maximum positive field height Yimmax.

Abstract: A microlithographic projection objective with a lens arrangement, has a a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power. The system diaphragm (AS) is situated in the fifth lens group, and at least two lenses of this lens group are situated before the system diaphragm (AS). The numerical aperture on the image side is greater than 0.65 (in examples, up to 0.8), or this lens group has at least 13 lenses, or the system diaphragm (AS) is arranged in the region of the lens at which the pencil of rays assumes the greatest diameter, and its two adjacent lenses.

Abstract: A projection lens (3), in particular for microlithography, is provided with an object plane (7), with an image plane (9), with a lens arrangement (4) and with at least one gas chamber filled with gas or through which gas flows. The gas chamber is constructed as an approximately plane-parallel manipulation chamber (13).

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: An optical arrangement, in particular a microlithographic projection printing installation, has in particular a slot-shaped image field or rotationally non-symmetrical illumination. An optical element (1) is therefore acted upon in a rotationally non-symmetrical manner by the radiation of the light source. A compensating light supply device (11, 14 to 19) is optically coupled via the peripheral surface (13) of the optical element (1) to the latter. It supplies compensating light (16, 12) to the optical element (1) in such a way that the temperature distribution in the optical element (1), which arises as a result of cumulative heating of the optical element (1) with projection light (2) and compensating light (12), is at least partially homogenized. In said manner image defects induced by the projection light are corrected.

Abstract: An optical arrangement is disclosed wherein an entering beam is converted into an exiting beam having a total cross section of light which is linearly polarized essentially in the radial direction by rotation. For this purpose, rasters of half-wave plates (41, 42, 4i), a combination of birefringent quarter-wave plate 420 and a circular plate 430 is suggested in combination with a conical polarizer 21′. This arrangement is preferably utilized in the illumination portion of a microlithographic projection exposure system. It is important that the arrangement be mounted behind all asymmetric or polarizing component elements 103a.

Abstract: An optical system with at least one optical element that causes a disturbance of the distribution of polarization over the cross section of a light beam wherein at least one birefringent optical element is provided, with a thickness which varies irregularly over the cross section, such that the disturbance of the distribution of polarization is at least partially compensated.

Abstract: The invention concerns an illumination system for wavelengths ≦193 nm, particularly for EUV lithography, with at least one light source, which has an illumination A in a predetermined surface; at least one device for producing secondary light sources; at least one mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements; one or more optical elements, which are arranged between the mirror or lens device comprising at least one mirror or one lens, which is or are organized into raster elements and the reticle plane, whereby the optical elements image the secondary light sources in the exit pupil of the illumination system.

Abstract: An optical arrangement is disclosed wherein an entering beam is converted into an exiting beam having a total cross section of light which is linearly polarized essentially in the radial direction by rotation. For this purpose, rasters of half-wave plates (41, 42, 4i), a combination of birefringent quarter-wave plate 420 and a circular plate 430 is suggested in combination with a conical polarizer 21′. This arrangement is preferably utilized in the illumination portion of a microlithographic projection exposure system. It is important that the arrangement be mounted behind all asymmetric or polarizing component elements 103a.

Abstract: The invention is directed to a catadioptric microlithographic reduction objective having two concave mirrors (21, 23) facing toward each other. The concave mirrors have a symmetrical configuration and a central bore. Lenses (24 to 60) are mounted downstream of the mirrors (21, 23) on the light path toward the image plane (61). Preferably, lenses (15 to 20) are moved at the object end forward into the intermediate space between the mirrors (21, 23) in the region of the central bore. The light path between the concave mirrors can then preferably be free of lenses. The formation of an intermediate image (Z) downstream of the mirrors (21, 23) affords especially good correction possibilities.

Abstract: The invention is directed to a double refracting planar plate arrangement and a .lambda./4 plate suitable for deep ultraviolet light. The .lambda./4 plate or the like is configured as a planar plate with stress-induced birefringence. The planar plate 1 is made of high quality quartz glass and is torsion-free and uniformly loaded in tension via suitable construction having several parallel tension devices (3, 7).

Abstract: An achromatic lens system, in particular for uses in the deep ultraviolet range below 350 nm wavelength, and therefore especially for projection exposure systems for microlithography, combines quartz glass with lenses made of germanium dioxide glass (GeO.sub.2). The production of GeO.sub.2 glass by CVD on an amorphous base made of the same material is described.

Abstract: An apochromatic wide-angle objective has an improved correction of transverse chromatic aberration while at the same providing a high correction of other errors. These corrections are obtained utilizing long-crown and short-flint glasses.

Abstract: The invention relates to an evaluation method for interferograms and an interferometer corresponding thereto with which tile influence of coherent noise is reduced with simultaneously high interference contrast. Several phase maps are computed from interferograms which are recorded with coherent light. The interferogram components of the test object and the interferogram components of the coherent noise are displaced relative to each other in the camera plane between recording the interferograms. The influence of the coherent noise is suppressed by subsequently averaging the phase maps.