Patents by Inventor Helmut Baumann
Helmut Baumann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8298962Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.Type: GrantFiled: September 28, 2010Date of Patent: October 30, 2012Assignee: Robert Bosch GmbHInventors: Arnd Kaelberer, Helmut Baumann, Roland Scheuerer, Heribert Weber
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Publication number: 20110108932Abstract: A manufacturing method for producing a micromechanical sensor element which may be produced in a monolithically integrable design and has capacitive detection of a physical quantity is described. In addition to the manufacturing method, a micromechanical device containing such. a sensor element, e.g., a pressure sensor or an acceleration sensor, is described.Type: ApplicationFiled: November 4, 2005Publication date: May 12, 2011Inventors: Hubert Benzel, Stefan Finkbeiner, Frank Fischer, Helmut Baumann, Lars Metzger, Roland Scheuerer, Peter Brauchle, Andreas Feustel, Matthias Neubauer
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Publication number: 20110014794Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.Type: ApplicationFiled: September 28, 2010Publication date: January 20, 2011Inventors: Arnd KAELBERER, Helmut Baumann, Roland Scheuerer, Heribert Weber
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Patent number: 7834452Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.Type: GrantFiled: June 27, 2008Date of Patent: November 16, 2010Assignee: Robert Bosch GmbHInventors: Arnd Kaelberer, Helmut Baumann, Roland Scheuerer, Heribert Weber
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Publication number: 20090008749Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.Type: ApplicationFiled: June 27, 2008Publication date: January 8, 2009Inventors: Arnd Kaelberer, Helmut Baumann, Roland Scheuerer, Heribert Weber
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Patent number: 7273764Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.Type: GrantFiled: January 3, 2005Date of Patent: September 25, 2007Assignee: Robert Bosch GmbHInventors: Frank Reichenbach, Stefan Pinter, Frank Henning, Hans Artmann, Helmut Baumann, Franz Laemer, Michael Offenberg, Georg Bischopink
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Publication number: 20050230708Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.Type: ApplicationFiled: January 3, 2005Publication date: October 20, 2005Inventors: Frank Reichenbach, Stefan Pinter, Frank Henning, Hans Artmann, Helmut Baumann, Franz Laemer, Michael Offenberg, Georg Bischopink
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Patent number: 6936902Abstract: A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.Type: GrantFiled: December 14, 2000Date of Patent: August 30, 2005Assignee: Robert Bosch GmbHInventors: Frank Reichenbach, Stefan Pinter, Frank Henning, Hans Artmann, Helmut Baumann, Franz Laemer, Michael Offenberg, Georg Bischopink
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Patent number: 6723250Abstract: A method of producing structured wafers guarantees that the edge of the wafer will be protected from attack by an aggressive etchant medium without applying a photoresist to the edge and without using additional mechanical measures. In a type of negative process, a passivation layer is applied to the areas that are not to be structured, including the edge area of the wafer.Type: GrantFiled: January 27, 1999Date of Patent: April 20, 2004Assignee: Robert Bosch GmbHInventors: Joerg Schaefer, Peter Linke, Albrecht Schwille, Helmut Baumann
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Publication number: 20040065932Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.Type: ApplicationFiled: October 3, 2002Publication date: April 8, 2004Inventors: Frank Reichenbach, Stefan Pinter, Frank Henning, Hans Artmann, Helmut Baumann, Franz Laemer, Michael Offenberg, Georg Bischopink
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Patent number: 6465854Abstract: A device, having at least one micromechanical surface structure patterned on a silicon substrate and a cap wafer covering the at least one surface structure. The cap wafer is formed from a glass wafer.Type: GrantFiled: September 15, 2000Date of Patent: October 15, 2002Assignee: Robert Bosch GmbHInventors: Horst Muenzel, Helmut Baumann, Eckhard Graf
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Patent number: 6462392Abstract: A micromechanical cap structure and a corresponding manufacturing method are described, the cap structure having a substrate, in particular in the form of a wafer, having a cavity made therein. The cavity includes a bottom surface and two pairs of opposite parallel side wall sections. The cavity has at least one stabilizing wall section, which connects two side wall sections. This considerably increases the stability of the cap structure.Type: GrantFiled: February 5, 2001Date of Patent: October 8, 2002Assignee: Robert Bosch GmbHInventors: Stefan Pinter, Harald Emmerich, Hans-Peter Trah, Helmut Baumann
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Patent number: 6360605Abstract: A micromechanical device, in particular an acceleration sensor, includes a seismic mass which is resiliently supported on a substrate via a first flexural spring device and which can be deflected in at least one direction by an acceleration, the deflection being able to be limited by a stop device. The stop device has at least one limit stop that is resiliently supported on the substrate via a second flexural spring device, the second flexural spring device having a greater flexural strength than the first flexural spring device.Type: GrantFiled: June 30, 2000Date of Patent: March 26, 2002Assignee: Robert Bosch GmbHInventors: Stefan Pinter, Martin Schoefthaler, Matthias Illing, Ralf Schellin, Helmut Baumann, Michael Fehrenbach, Dietrich Schubert, Georg Bischopink
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Patent number: 6271471Abstract: A housing for an electronic component has a bottom part, a wall part, a cover part which together are adapted to cover the electronic component, a contact spring provided on the cover part for producing an electrical connection with a terminal of the component, the cover part and the contact spring being formed as a one-piece integral element.Type: GrantFiled: December 2, 1999Date of Patent: August 7, 2001Assignee: Robert Bosch GmbHInventors: Manfred Leiter, Kurt Weiblen, Bernhard Lucas, Frank Schatz, Thomas Beez, Juergen Seiz, Helmut Baumann, Herbert Olbrich, Heinz Eisenschmid, Eberhard Moess, Joachim Dutzi, Andreas Kugler
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Patent number: 6204086Abstract: A method for manufacturing semiconductor components having micromechanical structures, micromechanical structures being patterned in a wafer for detecting a physical quantity acting on micromechanical structures, and semiconductor components for converting the physical quantity into an electrical signal proportional to the physical quantity being produced. The semiconductor components and the micromechanical structures are defined in a self-aligning manner by process steps acting on one side of the wafer to produce semiconductor components.Type: GrantFiled: March 11, 1998Date of Patent: March 20, 2001Assignee: Robert Bosch GmbHInventors: Joerg Muchow, Helmut Baumann
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Patent number: 6106735Abstract: A wafer stack with sensor elements hermetically sealed in caverns and a method of fabricating the sensors permitting a reduction in the size of the sensors formed after cutting the wafer stack and also yielding considerable savings in chip area in the manufacture of the wafer stack. The wafer stack includes bonding strips arranged between the individual sensor elements. The wafer stack is diced to form individual sensors by sawing in the middle through the bonding strips.Type: GrantFiled: January 12, 1998Date of Patent: August 22, 2000Assignee: Robert Bosch GmbHInventors: Jurgen Kurle, Kurt Weiblen, Stefan Pinter, Horst Muenzel, Helmut Baumann, Dietrich Schubert, Karl Bender, Markus Lutz
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Patent number: 5721377Abstract: In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.Type: GrantFiled: July 22, 1996Date of Patent: February 24, 1998Assignee: Robert Bosch GmbHInventors: Juergen Kurle, Kurt Weiblen, Horst Muenzel, Helmut Baumann, Klaus Heyers, Markus Lutz
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Patent number: 5705745Abstract: In a mass flow sensor having a frame of monocrystalline silicon and a membrane fixed therein, a heating element and, if indicated, temperature-measuring elements are provided on the membrane. A heat-conducting element, which extends from the membrane across the frame, is provided in the edge area of the membrane. The heating element, the heat-conducting element and, if indicated, temperature-measuring elements are patterned out of a single metal layer.Type: GrantFiled: July 29, 1996Date of Patent: January 6, 1998Assignee: Robert Bosch GmbHInventors: Christoph Treutler, Detlef Gruen, Horst Muenzel, Helmut Baumann, Steffen Schmidt, Andreas Lock
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Patent number: 5683947Abstract: An anodic bonding method allows uniform pressure on the components to be bonded. This is achieved in that the components which are bonded are structured such that cavities are formed between the components. The cavities are evacuated and the components are thus pressed together during bonding.Type: GrantFiled: August 4, 1995Date of Patent: November 4, 1997Assignee: Robert Bosch GmbHInventor: Helmut Baumann
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Patent number: 5629538Abstract: A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.Type: GrantFiled: May 3, 1995Date of Patent: May 13, 1997Assignee: Robert Bosch GmbHInventors: Uwe Lipphardt, Guenther Findler, Horst Muenzel, Helmut Baumann