Abstract: An illustrative method disclosed herein includes measuring at least one electrical-related parameter of a doped semiconductor material by simultaneously irradiating at least a portion of an upper surface of the doped semiconductor material, urging a conductive tip of a cantilever beam probe into conductive contact with the upper surface of the irradiated portion of the doped semiconductor material, and generating an electrical current that flows through the doped semiconductor material, through a measurement device that is operatively coupled to the cantilever beam probe and through the cantilever beam probe, wherein the measurement device measures the at least one electrical-related parameter of the doped semiconductor material.

Abstract: An illustrative system disclosed herein includes a conductive probe that is adapted to hold a quantity of mercury, wherein the conductive probe includes a conductive body with an outlet and a mercury control system adapted to supply mercury to the conductive probe. In this example, the system also includes an image sensor that is adapted to obtain an image of a mercury droplet positioned on a surface of a material and a measurement system that is adapted to receive the image of the mercury droplet and calculate a contact area between the mercury droplet and the surface of the material based upon the image of the mercury droplet.