Patents by Inventor Hemant P. Mungekar

Hemant P. Mungekar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10777394
    Abstract: Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints. In some implementations, a “virtual sensor” for detecting a cleaning endpoint is provided. The “virtual sensor” is based on monitoring trends of chamber foreline pressure during cleaning of the chamber, which involves converting solid deposited films on the chamber parts into gaseous byproducts by reaction with etchants like fluorine plasma for example. Validity of the “virtual sensor” has been confirmed by comparing the “virtual sensor” response with infrared-based optical measurements. In another implementation, methods of accounting for foreline pressure differences due to facility design and foreline clogging over time.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: September 15, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Hemant P. Mungekar, William Pryor, Zhijun Jiang
  • Patent number: 10636630
    Abstract: A processing chamber and a processing method for processing a substrate in the processing chamber with thermal control are described herein. The method includes heating a first substrate using a heater apparatus during a first processing operation. The heater apparatus has a first setpoint during at least a first portion of the first processing operation. The first substrate is disposed on a substrate support surface of an electrostatic chuck in a processing chamber. The method further includes determining a first parameter change corresponding to a resistivity change in the electrostatic chuck, determining a second setpoint for the heater apparatus based on the first parameter change, and controlling the heater apparatus to the second setpoint.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hemant P. Mungekar, Ganesh Balasubramanian, Yoichi Suzuki, Abdul Aziz Khaja
  • Publication number: 20190066984
    Abstract: A processing chamber and a processing method for processing a substrate in the processing chamber with thermal control are described herein. The method includes heating a first substrate using a heater apparatus during a first processing operation. The heater apparatus has a first setpoint during at least a first portion of the first processing operation. The first substrate is disposed on a substrate support surface of an electrostatic chuck in a processing chamber. The method further includes determining a first parameter change corresponding to a resistivity change in the electrostatic chuck, determining a second setpoint for the heater apparatus based on the first parameter change, and controlling the heater apparatus to the second setpoint.
    Type: Application
    Filed: July 12, 2018
    Publication date: February 28, 2019
    Inventors: Hemant P. MUNGEKAR, Ganesh BALASUBRAMANIAN, Yoichi SUZUKI, Abdul Aziz KHAJA
  • Publication number: 20180166260
    Abstract: Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints. In some implementations, a “virtual sensor” for detecting a cleaning endpoint is provided. The “virtual sensor” is based on monitoring trends of chamber foreline pressure during cleaning of the chamber, which involves converting solid deposited films on the chamber parts into gaseous byproducts by reaction with etchants like fluorine plasma for example. Validity of the “virtual sensor” has been confirmed by comparing the “virtual sensor” response with infrared-based optical measurements. In another implementation, methods of accounting for foreline pressure differences due to facility design and foreline clogging over time.
    Type: Application
    Filed: November 13, 2017
    Publication date: June 14, 2018
    Inventors: Hemant P. MUNGEKAR, William PRYOR, Zhijun JIANG
  • Publication number: 20140127404
    Abstract: Provided are atomic layer deposition apparatus and methods including a plurality of elongate gas ports and pump ports in communication with multiple conduits to transport the gases from the processing chamber to be condensed, stored and/or recirculated.
    Type: Application
    Filed: November 6, 2013
    Publication date: May 8, 2014
    Inventors: Joseph Yudovsky, Hemant P. Mungekar, Michael S. Cox, Zheng Yuan
  • Publication number: 20140000686
    Abstract: Embodiments of the invention relate to methods for fabricating a passivation layer stack for photovoltaic devices. In one embodiment, the passivation layer stack comprises a first dielectric layer of AlxOy (or SiOx) and a second dielectric layer of SixNy having a refractive index less than 2.1. The passivation layer stack has contact openings formed therethrough by a series of pulsed laser beams having a wavelength of about 300-700 nm and a pulse width of about 0.01 nanosecond to about 3 nanoseconds. Lowering the refractive index of SixNy capping AlxOy (or SiOx) in the passivation layer stack makes pulsed laser beams less selective since the SixNy absorbs less laser energy. Therefore, desired regions of the entire passivation layer stack can be removed smoothly in a single pass of pulsed laser beams at a shorter wavelength without causing damage to the neighborhood of the passivation layer stack.
    Type: Application
    Filed: March 11, 2013
    Publication date: January 2, 2014
    Inventors: Hemant P. MUNGEKAR, Jeffrey L. FRANKLIN, Yi ZHENG, Lin ZHANG, Manoj VELLAIKAL
  • Publication number: 20130273262
    Abstract: Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
    Type: Application
    Filed: April 13, 2012
    Publication date: October 17, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Manoj Vellaikal, Michael S. Cox, Hemant P. Mungekar, Chikuang C. Wang, Lin Zhang, Hari K. Ponnekanti, Michael P. Stewart, Edward P. Hammond, IV, Alexander S. Polyak
  • Publication number: 20130247972
    Abstract: Methods of forming a passivation film stack on a surface of a silicon-based substrate are provided. In one embodiment, the passivation film stack includes a silicon nitride layer and an aluminum oxide layer disposed between the silicon nitride layer and the silicon-based substrate. The aluminum oxide layer is deposited such that the aluminum oxide layer has a low hydrogen (H) content less than about 17 atomic % and a mass density greater than about 2.5 g/cm3. The silicon nitride layer is deposited on the aluminum oxide layer such that the silicon nitride layer has a low hydrogen (H) content less than about 5 atomic %, and a mass density greater than about 2.7 g/cm3. Reduced amount of hydrogen content in the aluminum oxide layer and the silicon nitride layer prevents gas bubbles from forming in the layers and at the interface of the passivation film stack that cause the film stack to blister.
    Type: Application
    Filed: February 15, 2013
    Publication date: September 26, 2013
    Inventors: Hemant P. MUNGEKAR, Lin ZHANG, Daniel SEVERIN
  • Publication number: 20130171757
    Abstract: The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
    Type: Application
    Filed: January 2, 2013
    Publication date: July 4, 2013
    Inventors: HARI K. PONNEKANTI, Alexander S. Polyak, James L'Heureux, Michael S. Cox, Christopher T. Lane, Edward P. Hammond, IV, Hemant P. Mungekar, Susanne Schlaefer, Wolfgang Buschbeck, Juergen Henrich, Andreas Lopp
  • Publication number: 20130109133
    Abstract: Embodiments of the invention generally relate to methods for performing rear-point-contact processes on substrates, particularly solar cell substrates. The methods generally include disposing a substrate on a substrate support which functions as a mask during deposition of a passivation layer on a back surface of the substrate. A process gas is introduced to an area between the back surface of the substrate and the substrate support in order to deposit the passivation layer on the back surface of the substrate. The deposited passivation layer has openings therethrough in order to facilitate electrical contact of the substrate with a metallization layer subsequently formed over the passivation layer. The passivation layer is formed without requiring a separate patterning and etching process of the passivation layer.
    Type: Application
    Filed: October 12, 2012
    Publication date: May 2, 2013
    Inventors: Michel R. Frei, Hemant P. Mungekar, Hari K. Ponnekanti
  • Publication number: 20130059092
    Abstract: A method and apparatus for processing a substrate is described. One embodiment of the invention provides an apparatus for forming thin films. The apparatus comprises a chamber defining an internal volume, a plasma source disposed within the internal volume, and at least one gas injection source disposed adjacent the plasma source within the internal volume, wherein the at least one gas injection source comprises a first channel and a second channel for delivering gases to the internal volume, the first channel delivering a gas at a first pressure or a first density and the second channel delivering a gas at a second pressure or a second density, the first pressure or the first density being different than the second pressure or the second density.
    Type: Application
    Filed: September 6, 2012
    Publication date: March 7, 2013
    Applicant: Applied Materials, Inc.
    Inventors: HEMANT P. MUNGEKAR, Alexander S. Polyak, Michael S. Cox
  • Patent number: 8168462
    Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: May 1, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Peter Borden, Michael P. Stewart, Li Xu, Hemant P. Mungekar, Christopher S. Olsen
  • Publication number: 20110272024
    Abstract: Embodiments of the invention include a solar cell and methods of forming a solar cell. Specifically, the methods may be used to form a passivation/anti-reflection layer having combined functional and optical gradient properties on a solar cell substrate. The methods may include flowing a first process gas mixture into a process volume within a processing chamber generating plasma in the processing chamber at a power density of greater than 0.65 W/cm2 depositing a silicon nitride-containing interface sub-layer on a solar cell substrate in the process volume, flowing a second process gas mixture into the process volume, and depositing a silicon nitride-containing bulk sub-layer on the silicon nitride-containing interface sub-layer.
    Type: Application
    Filed: March 30, 2011
    Publication date: November 10, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Dongwon Choi, Michael P. Stewart, Li Xu, Hemant P. Mungekar, Sunhom Paak, Kenneth MacWilliams
  • Publication number: 20110272008
    Abstract: Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1×1011 Coulombs/cm2 on a rear surface of a p-type doped region formed in a substrate comprising semiconductor material, the rear surface opposite a light receiving surface of the substrate and forming a silicon nitride sub-layer on the silicon oxide sub-layer. Embodiments of the invention also include a solar cell device that may be manufactured according methods disclosed herein.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 10, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hemant P. Mungekar, Mukul Agrawal, Michael P. Stewart, Timothy W. Weidman, Rohit Mishra, Sunhom Paak
  • Publication number: 20110240114
    Abstract: The present invention generally provides a method of forming a high quality passivation layer over a p-type doped region to form a high efficiency solar cell device. Embodiments of the present invention may be especially useful for preparing a surface of a boron doped region formed in a silicon substrate. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface and then deposit a charged dielectric layer and passivation layer thereon.
    Type: Application
    Filed: March 14, 2011
    Publication date: October 6, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Michael P. Stewart, Mukul Agrawal, Rohit Mishra, Hemant P. Mungekar, Timothy Weidman
  • Patent number: 7867921
    Abstract: A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 ? is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: January 11, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
  • Publication number: 20100311203
    Abstract: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel plasma oxidation process to form a passivation film stack on a surface of a solar cell substrate. In one embodiment, the methods include providing a substrate having a first type of doping atom on a back surface of the substrate and a second type of doping atom on a front surface of the substrate, plasma oxidizing the back surface of the substrate to form an oxidation layer thereon, and forming a silicon nitride layer on the oxidation layer.
    Type: Application
    Filed: June 5, 2009
    Publication date: December 9, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Peter Borden, Michael P. Stewart, Li Xu, Hemant P. Mungekar, Christopher S. Olsen
  • Patent number: 7799704
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: September 21, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
  • Patent number: 7745350
    Abstract: Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: June 29, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
  • Patent number: 7740706
    Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: June 22, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu