Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

Abstract: A bracket for supporting a portable electronic device is disclosed. The bracket includes a base, a housing receiving the portable electronic device and an arm connecting the base with the housing. The arm defines a slot which has a plurality of teeth arranged along a lengthwise direction thereof. A connector extends through the slot of the arm into the housing. The connector has two elastic tabs movably engaging with the teeth to thereby position the housing at different heights of the arm.

Abstract: A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure. Next, an insulation material layer is formed on the substrate. Then, a portion of the first fin structure is removed, to form a first recess. Following this, a first buffer layer and a first channel layer are formed sequentially in the first recess. Next, a portion of the second fin structure is removed, to form a second recess. Then, a second buffer layer and a second channel layer are formed in the second recess sequentially, wherein the second buffer layer is different from the first buffer layer.

Abstract: A P-type field effect transistor includes: a gate area; an insulated area, adjacent to the gate area; a source region and a drain region made by silicon germanium, respectively, adjacent to the second side of the insulated area; a channel area, adjacent to the insulated area and formed between the source region and the drain region; a conductive layer, electrically connected to the source region and the drain region, respectively; and a plurality of capping layers, connected between the conductive layer and the source/drain regions, wherein the silicon layer(s) and the silicon germanium layer(s) are stacked alternately, and of which a silicon layer contacts the source/drain silicon germanium regions, while a silicon germanium layer contacts the conductive layer. The present invention also provides a complementary metal oxide semiconductor transistor including the P-type field effect transistor mentioned above.

Abstract: A P-type field effect transistor includes: a gate area; an insulated area, adjacent to the gate area; a source region and a drain region made by silicon germanium, respectively, adjacent to the second side of the insulated area; a channel area, adjacent to the insulated area and formed between the source region and the drain region; a conductive layer, electrically connected to the source region and the drain region, respectively; and a plurality of capping layers, connected between the conductive layer and the source/drain regions, wherein the silicon layer(s) and the silicon germanium layer(s) are stacked alternately, and of which a silicon layer contacts the source/drain silicon germanium regions, while a silicon germanium layer contacts the conductive layer. The present invention also provides a complementary metal oxide semiconductor transistor including the P-type field effect transistor mentioned above.

Abstract: A method of characterizing a device may be used to determine a metal work function of the device according to a threshold voltage, a body effect, and an oxide capacitance of the device. The threshold voltage may be determined according to a current to voltage curve. The oxide capacitance may be determined according to a capacitor to voltage curve.

Abstract: A bracket for supporting a portable electronic device is disclosed. The bracket includes a base, a housing receiving the portable electronic device and an arm connecting the base with the housing. The arm defines a slot which has a plurality of teeth arranged along a lengthwise direction thereof. A connector extends through the slot of the arm into the housing. The connector has two elastic tabs movably engaging with the teeth to thereby position the housing at different heights of the arm.

Abstract: Method applied to endpoint of video conference system and associated endpoint; in a receiving endpoint which receives video conference packets, while obtaining pictures from contents of video and data within the video conference packets, capturing the pictures as images on a user capture command or a result of automatic scene change detection.

Abstract: Method applied to endpoint of video conference system and associated endpoint; in a receiving endpoint which receives video conference packets, while obtaining pictures from contents of video and data within the video conference packets, capturing the pictures as images on a user capture command or a result of automatic scene change detection.

Abstract: The present gate structure comprises a gate oxide layer positioned on a substrate, a conductive stack positioned on the gate oxide layer, a passivation layer positioned on the sidewall of the conductive stack, and a cap layer positioned on the conductive stack. The conductive stack includes a polysilicon layer, a tungsten nitride layer, and a tungsten layer. The passivation layer can be made of silicon oxide, silicon nitride, or silicon oxynitride. The present method for preparing the gate structure comprises steps of forming a gate oxide layer, a conductive stack, and a cap layer on a semiconductor substrate in sequence, removing a portion of the gate oxide layer, the conductive stack, and the cap layer to form at least one opening, implanting silicon ions into the sidewall of the conductive stack, and performing a thermal treating process to transform the sidewall with silicon ions into a passivation layer.

Abstract: The invention provides a method for equipping personal digital product with functions of recording and displaying the digital video/audio multi-media, comprising: providing a modulated interlacing video signal and an analog audio signal for de-modulation and de-interlacing of the interlacing video signal; at the same time processing digital transformation of the analog audio signal for digitalizing the analog audio signal to obtain a digital audio signal; then compressing the de-interlaced video signal and the digital audio signal to obtain a compressed de-interlaced video signal and a compressed digital audio signal; putting the compressed de-interlaced video signal and the compressed digital audio signal under synchronous process to obtain a synchronized compressed video signal and compressed audio signal; finally, outputting the synchronized compressed video signal and compressed audio signal to a processing unit of digital apparatus for selecting from recording or displaying the digital video/audio multi-

Abstract: The invention relates to an apparatus for recycling synthetic leather. The primary object of the invention is to provide an apparatus for recycling synthetic leather which can effectively separate out the resin from the synthetic leather.

Abstract: A parking sensor having a base for attaching to a vehicle, a flexible probe for contacting an impending obstruction, a contact for producing an electrical signal responsive to deflection of the probe, a lamp, buzzer, or other transducer for indicating the electrical signal, and a filter for preventing operation of the transducer during spurious occurrences of the electrical signal. The filter can include a timer for activating the transducer when the electrical signal continues beyond a first interval, which can be from 0.05 to 1.0 second. Also, the timer prevents activation of the transducer beyond a second, longer interval that is typically 10 to 40 seconds for terminating the indication (and power drain) when further corrective action by an operator of the vehicle is unlikely.