Patents by Inventor Heng Pan

Heng Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200044074
    Abstract: A semiconductor device and method of forming the same are disclosed. The semiconductor device includes a fin structure, a gate electrode, a source-drain region, a plug and a hard mask structure. The gate electrode crosses over the fin structure. The source-drain region in the fin structure is aside the gate electrode. The plug is disposed over and electrically connected to the gate electrode. The hard mask structure surrounds the plug and is disposed over the gate electrode, wherein the hard mask structure includes a first hard mask layer and a second hard mask layer, the second hard mask layer covers a sidewall and a top surface of the first hard mask layer, and a material of the first hard mask layer is different from a material of the second hard mask layer.
    Type: Application
    Filed: July 17, 2019
    Publication date: February 6, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Sheng Liang, Kuo-Hua Pan, Hsin-Che Chiang, Ming-Heng Tsai
  • Patent number: 10547044
    Abstract: A dry electrode manufacturing process employed for low cost battery through a dry mixing and formation process. A thermal activation renders the dry fabricated electrode comparable to conventional slurry casted electrodes. The dry electrode mixture results from a combination of a plurality of types of constituent particles, including at least an active charge material and a binder, and typically a conductive material such as carbon. The process heats the deposited mixture to a moderate temperature for activating the binder for adhering the mixture to the substrate; and compresses the deposited mixture to a thickness for achieving an electrical sufficiency of the compressed, deposited mixture as a charge material in a battery.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: January 28, 2020
    Assignees: Worcester Polytechnic Institute, The Curators of the University of Missouri
    Inventors: Yan Wang, Zhangfeng Zheng, Brandon Ludwig, Heng Pan
  • Publication number: 20190334013
    Abstract: A method for manufacturing a semiconductor device includes forming a shallow trench isolation (STI) structure surrounding a pair of semiconductor fins; forming a dummy gate layer over the STI structure and the semiconductor fins; etching a first portion of the dummy gate layer to form a trench through the dummy gate layer until the STI structure is exposed, in which the trench extends between the semiconductor fins along a lengthwise direction of the semiconductor fins; forming an insulating structure in the trench through the dummy gate layer; after forming the insulating structure extending through the dummy gate layer, patterning the dummy gate layer to form a pair of dummy gate structures each of which is across a respective one of the semiconductor fins; and replacing the dummy gate structures with a pair of metal gate structures.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Inventors: Ming-Heng TSAI, Chun-Sheng LIANG, Kuo-Hua PAN
  • Publication number: 20190217387
    Abstract: Confining material particles during laser irradiation of the particles at ambient atmospheric pressure for additive manufacturing. In an embodiment, an optically transparent press permits transmitting a laser beam through the press to process material particles while simultaneously applying pressure to the particles. Confinement of material particles assists laser processing by providing densification, providing planarization, reducing the gap for material evaporation and transfer to a substrate, and the like.
    Type: Application
    Filed: September 25, 2017
    Publication date: July 18, 2019
    Inventors: Heng Pan, Brandon Ludwig, Wan Shou
  • Publication number: 20190218877
    Abstract: Transducer assembly for an offshore drilling riser, in an example, includes a spool for connecting into the riser and a protrusion extending around the side wall of the spool. A recess extends around the protrusion between upper and lower sloping surfaces. Upper transducer bores are spaced around the protrusion and extend from the upper sloping surface downward and inward into the spool bore and lower transducer bores extend from the lower sloping surface upward and inward into the spool bore. A base of a rigid non-metallic material is located in each of the transducer bores. A seal ring extends around a cylindrical exterior portion of each of the bases and one of the transducer bores. An acoustic transducer element is mounted to the outer end of each of the bases. The transducer assembly can detect drilling fluid and form sealing.
    Type: Application
    Filed: August 26, 2016
    Publication date: July 18, 2019
    Applicant: Hydril USA Distribution LLC
    Inventors: Chuanlin PAN, Heng YANG, Xing YU, Bing PU, Jing YE, Weihua SHANG, Heng WU, Ran NIU
  • Patent number: 10347750
    Abstract: A semiconductor device includes a substrate, at least one gate, and an insulating structure. The substrate includes at least one semiconductor fin. The gate is disposed on the semiconductor fin. The gate has at least one end sidewall. The insulating structure is disposed adjacent to the gate. The insulating structure has a sidewall facing the gate, and the end sidewall of the gate is in contact with a portion of the sidewall of the insulating structure while leaves another portion of the sidewall of the insulating structure uncovered.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: July 9, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Heng Tsai, Chun-Sheng Liang, Kuo-Hua Pan
  • Patent number: 10211046
    Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: February 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Lara Hawrylchak, Christopher S. Olsen
  • Publication number: 20180283957
    Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
    Type: Application
    Filed: March 5, 2018
    Publication date: October 4, 2018
    Inventors: Heng PAN, Matthew Scott ROGERS, Aaron Muir HUNTER, Stephen MOFFATT
  • Patent number: 9909925
    Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: March 6, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Matthew Scott Rogers, Aaron Muir Hunter, Stephen Moffatt
  • Publication number: 20170316930
    Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
    Type: Application
    Filed: July 14, 2017
    Publication date: November 2, 2017
    Inventors: HENG PAN, MATTHEW SCOTT ROGERS, CHRISTOPHER S. OLSEN
  • Patent number: 9768052
    Abstract: Embodiments of the present invention generally relate to a support ring for supporting a substrate during thermal processing in a process chamber. The support ring generally includes a ring body, an outer rib extending from a first surface of the ring body, a midrib extending from the first surface of the ring body, and a substrate support extending from a second surface of the ring body. The support ring reduces thermal coupling between a substrate and the support ring.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: September 19, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Kevin J. Bautista
  • Patent number: 9728401
    Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: August 8, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Matthew Scott Rogers, Christopher S. Olsen
  • Patent number: 9716972
    Abstract: A system, method and device to interrogate for the presence of objects, to prevent the inadvertent separation of the objects from their owner. An owner is alerted when they are separated from the objects by determining when a trigger event occurs, such as a person leaving and/or entering a particular monitored area or location. These monitored areas can be retrofitted with an electronic interrogation device that monitors local conditions to determine whether a user is entering or leaving the monitored area to trigger an interrogation of the personal items. The interrogation device is constructed and arranged to communicate with the objects to determine whether the objects are with the owner. The interrogation device automatically determines the presence of a particular object at the monitored environment and automatically generates a notification when needed. The system further controls functionality of the objects, according to illustrative embodiments, when the object is present.
    Type: Grant
    Filed: October 29, 2013
    Date of Patent: July 25, 2017
    Inventors: James D. Logan, Michael A. Form, Heng Pan, Charles G. Call, Teeporn Paul Tanpitukpongse, Jeffrey D. Logan, Daniel Opalacz
  • Publication number: 20170062798
    Abstract: A dry electrode manufacturing process employed for low cost battery through a dry mixing and formation process. A thermal activation renders the dry fabricated electrode comparable to conventional slurry casted electrodes. The dry electrode mixture results from a combination of a plurality of types of constituent particles, including at least an active charge material and a binder, and typically a conductive material such as carbon. The process heats the deposited mixture to a moderate temperature for activating the binder for adhering the mixture to the substrate; and compresses the deposited mixture to a thickness for achieving an electrical sufficiency of the compressed, deposited mixture as a charge material in a battery.
    Type: Application
    Filed: August 31, 2016
    Publication date: March 2, 2017
    Inventors: Yan Wang, Zhangfeng Zheng, Brandon Ludwig, Heng Pan
  • Patent number: 9558982
    Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: January 31, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Sairaju Tallavarjula, Kevin J. Bautista, Jeffrey Tobin
  • Publication number: 20160300712
    Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.
    Type: Application
    Filed: June 15, 2016
    Publication date: October 13, 2016
    Inventors: Heng PAN, Matthew Scott ROGERS, Agus S. TJANDRA, Christopher S. OLSEN
  • Patent number: 9012336
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: April 21, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcom J. Bevan
  • Publication number: 20150020736
    Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.
    Type: Application
    Filed: June 26, 2014
    Publication date: January 22, 2015
    Inventors: Heng Pan, Lara Hawrylchak, Christopher S. Olsen
  • Publication number: 20140302686
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Application
    Filed: April 8, 2013
    Publication date: October 9, 2014
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcolm J. Bevan
  • Publication number: 20140273530
    Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Inventors: Victor Nguyen, Isabelita Roflox, Mihaela Balseanu, Li-Qun Xia, Heng Pan, Wei Liu, Malcolm J. Bevan, Christopher S. Olsen, Johanes F. Swenberg