Patents by Inventor Henning Feick
Henning Feick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145253Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etchinType: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Patent number: 11948802Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.Type: GrantFiled: December 22, 2021Date of Patent: April 2, 2024Assignee: Infineon Technologies Dresden GmbH & Co. KGInventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Publication number: 20240097037Abstract: A transistor device includes: a semiconductor substrate having a doping concentration of a first dopant type; a highly doped source region of a second dopant type formed in a first surface of the semiconductor substrate; a first highly doped drain region of the second dopant type formed in the first surface; a gate structure arranged on the first surface and including a gate electrode formed on the first surface; and a first lightly doped region formed in the first surface and extending from the highly doped source region under the gate electrode. A channel region extends between the first lightly doped region and the highly doped drain region. The channel region has an average doping level of the first dopant type of n×10x that varies by less than 0.5×n×10X between the first lightly doped region and the highly doped drain region along the lateral direction parallel to the first surface.Type: ApplicationFiled: August 30, 2023Publication date: March 21, 2024Inventors: Jürgen Faul, Andreas Urban Bertl, Ewa Kowalska, Henning Feick
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Patent number: 11869919Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.Type: GrantFiled: November 25, 2020Date of Patent: January 9, 2024Assignee: Infineon Technologies Dresden GmbH & Co. KGInventors: Magali Glemet, Boris Binder, Henning Feick, Dirk Offenberg
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Publication number: 20230083491Abstract: A photon avalanche diode includes: first, second, and third diodes formed in a semiconductor body, the second diode being a photodiode; a main cathode terminal connected to the cathode of the first diode; a main anode terminal connected to the anode of the third diode; an auxiliary cathode terminal connected to the cathode of the second and third diodes; and an auxiliary anode terminal connected to the anode of the first and second diodes. The main anode terminal is electrically connected to ground or a reference potential. The main cathode terminal is electrically connected to a voltage which causes a photocarrier multiplication region to form within the semiconductor body. The auxiliary anode terminal is electrically connected to ground or to a read-out circuit. The auxiliary cathode terminal is electrically connected to a constant bias voltage less than a voltage applied to the main cathode terminal.Type: ApplicationFiled: November 23, 2022Publication date: March 16, 2023Inventor: Henning Feick
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Publication number: 20230071856Abstract: A method for producing a protection device and a protection device are disclosed. The method includes: forming a first diode arrangement including at least one first diode and at least one second diode connected in anti-series between a first circuit node and a second circuit node of the first diode arrangement; forming a second diode arrangement including at least one first diode and at least one second diode connected in anti-series between a first circuit node and a second circuit node of the second diode arrangement; and connecting the second circuit node of the first diode arrangement and the second circuit node of the second diode arrangement.Type: ApplicationFiled: November 15, 2022Publication date: March 9, 2023Inventors: Rolf Weis, Josef Deichler, Henning Feick, Ahmed Mahmoud
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Patent number: 11594654Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.Type: GrantFiled: August 30, 2021Date of Patent: February 28, 2023Assignee: Infineon Technologies AGInventors: Andre Roeth, Henning Feick, Heiko Froehlich, Thoralf Kautzsch, Olga Khvostikova, Stefano Parascandola, Thomas Popp, Maik Stegemann, Mirko Vogt
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Publication number: 20230049511Abstract: Disclosed is a circuit arrangement. The circuit arrangement includes: an electronic circuit integrated in a semiconductor body; an input pin coupled to the electronic circuit; an insulation layer formed on top of the semiconductor body; and a protection device connected to the input pin. The protection device is integrated in a polysilicon layer formed on top of the insulation layer.Type: ApplicationFiled: August 8, 2022Publication date: February 16, 2023Inventors: Rolf Weis, Josef Deichler, Henning Feick, Ahmed Mahmoud
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Publication number: 20230029591Abstract: An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.Type: ApplicationFiled: July 26, 2022Publication date: February 2, 2023Inventors: Juergen Faul, Andreas Urban Bertl, Henning Feick
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Patent number: 11527670Abstract: A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.Type: GrantFiled: February 13, 2020Date of Patent: December 13, 2022Assignee: Infineon Technologies Dresden GmbH & Co. KGInventor: Henning Feick
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Publication number: 20220115499Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Publication number: 20220069156Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.Type: ApplicationFiled: August 30, 2021Publication date: March 3, 2022Inventors: Andre Roeth, Henning Feick, Heiko Froehlich, Thoralf Kautzsch, Olga Khvostikova, Stefano Parascandola, Thomas Popp, Maik Stegemann, Mirko Vogt
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Patent number: 11245002Abstract: A transistor arrangement includes: a layer stack with first and second semiconductor layers of complementary first and second doping types; a first source region of a first transistor device adjoining the first semiconductor layers; a first drain region of the first transistor device adjoining the second semiconductor layers and spaced apart from the first source region; gate regions of the first transistor device, each gate region adjoining at least one second semiconductor layer, being arranged between the first source region and the first drain region, and being spaced apart from the first source region and the first drain region; a third semiconductor layer adjoining the layer stack and each of the first source region, first drain region, and each gate region; and active regions of a second transistor device integrated in the third semiconductor layer in a second region spaced apart from a first region of the third semiconductor layer.Type: GrantFiled: December 21, 2018Date of Patent: February 8, 2022Assignee: Infineon Technologies Dresden GmbH & Co. KGInventors: Rolf Weis, Henning Feick, Franz Hirler, Andreas Meiser
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Patent number: 11217453Abstract: A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.Type: GrantFiled: June 17, 2020Date of Patent: January 4, 2022Assignee: INFINEON TECHNOLOGIES DRESDEN GMBH & CO. KGInventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Patent number: 11175389Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.Type: GrantFiled: January 20, 2020Date of Patent: November 16, 2021Inventors: Stefano Parascandola, Henning Feick, Matthias Franke, Dirk Offenberg, Jens Prima, Robert Roessler, Michael Sommer
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Publication number: 20210257508Abstract: A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.Type: ApplicationFiled: February 13, 2020Publication date: August 19, 2021Inventor: Henning Feick
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Publication number: 20210167117Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.Type: ApplicationFiled: November 25, 2020Publication date: June 3, 2021Inventors: Magali Glemet, Boris Binder, Henning Feick, Dirk Offenberg
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Publication number: 20210043497Abstract: A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.Type: ApplicationFiled: June 17, 2020Publication date: February 11, 2021Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
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Patent number: 10804354Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.Type: GrantFiled: March 23, 2018Date of Patent: October 13, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Hans Taddiken, Martin Bartels, Andrea Cattaneo, Henning Feick, Christian Kuehn, Anton Steltenpohl
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Publication number: 20200287071Abstract: According to an embodiment, a time of flight sensor device includes: a semiconductor substrate having a conversion region to convert an electromagnetic signal into photo-generated charge carriers, and including a substrate doping region having a n-doping type. The substrate doping region extends from a first main surface region of the semiconductor substrate into the semiconductor substrate. The semiconductor substrate has a p doped region adjacent to the substrate doping region. The substrate doping region at least partially forms the conversion region in the semiconductor substrate. A readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type is configured to readout the photo generated charge carriers. A control electrode is arranged in the substrate doping region of the semiconductor substrate and in the substrate doping region and has a p-doping type.Type: ApplicationFiled: March 3, 2020Publication date: September 10, 2020Inventor: Henning Feick