Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system. The lithographic projection apparatus is further provided with immersion system for providing a fluid between the lens and the substrate.

Abstract: A lithographic apparatus has a plurality of patterning arrays (e.g., 2, 4, etc.), which are spaced apart in an object plane. A combined, overlapped image of the patterning arrays is projected onto the substrate. Because the image is formed from radiation produced from spaced apart patterning arrays, the image arrives from different angles and has a higher effective numerical aperture (NA).

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.

Abstract: While the alignment beam is focused on a mark on the substrate table, the substrate table is moved substantially perpendicularly to the alignment beam. If the image of the mark moves relative to a reference mark, then the substrate and the alignment beam are not perpendicular. The mark on the substrate table is aligned to a plurality of reference marks. At least two substrate marks are then aligned with a single reference mark. Errors due to the inclination of the alignment beam are eliminated from the expansion and rotation values calculated for the substrate.

Abstract: To calibrate a front-to-backside alignment system a transparent calibration substrate with reference markers on opposite sides is used. A plane plate is inserted to displace the focal position of the alignment system from the top to bottom surface of the calibration substrate.

Abstract: To align between layers having a large Z separation, an alignment system which illuminates reference markers with normally incident radiation is used. The alignment system has an illumination system that is telecentric on the substrate side.

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer.

Abstract: While the alignment beam is focused on a mark on the substrate table, the substrate table is moved substantially perpendicularly to the alignment beam. If the image of the mark moves relative to a reference mark, then the substrate and the alignment beam are not perpendicular. The mark on the substrate table is aligned to a plurality of reference marks. At least two substrate marks are then aligned with a single reference mark. Errors due to the inclination of the alignment beam are eliminated from the expansion and rotation values calculated for the substrate.

Abstract: An optical element is placed in the alignment beam during alignment. The optical element serves to focus the alignment beam onto the substrate alignment mark when it is at a different focal length from the front surface of the substrate.

Abstract: To align between layers having a large Z separation, an alignment system which illuminates reference markers with normally incident radiation is used. The alignment system has an illumination system that is telecentric on the substrate side.

Abstract: To calibrate a front-to-backside alignment system a transparent calibration substrate with reference markers on opposite sides is used. A plane plate is inserted to displace the focal position of the alignment system from the top to bottom surface of the calibration substrate.

Abstract: An optical exposure method carried out on a substrate that is at least partially covered by a layer of radiation-sensitive material, the method comprising: providing a plurality of projection beams of radiation; a first irradiating step of irradiating a peripheral annulus of the layer of radiation-sensitive material with a first one of said projection beams; and a second irradiating step of irradiating at least one inner portion of the radiation-sensitive material situated nearer the center of the substrate than the inner periphery of the outer region with a second one of said projection beams; wherein said first and second irradiating steps are carried out with the substrate positioned at the same location. The method can be used for edge bead removal (both coarse and fine detail) and marker clearout at a single station. Stencils can be used to modify the shape and size of the irradiating steps. Such a method can be incorporated as a part of a device manufacturing method but can be used as an single method.

Abstract: An optical exposure method carried out on a substrate that is at least partially covered by a layer of radiation-sensitive material, the method comprising: providing a plurality of projection beams of radiation; a first irradiating step of irradiating a peripheral annulus of the layer of radiation-sensitive material with a first one of said projection beams; and a second irradiating step of irradiating at least one inner portion of the radiation-sensitive material situated nearer the center of the substrate than the inner periphery of the outer region with a second one of said projection beams; wherein said first and second irradiating steps are carried out with the substrate positioned at the same location. The method can be used for edge bead removal (both coarse and fine detail) and marker clearout at a single station. Stencils can be used to modify the shape and size of the irradiating steps. Such a method can be incorporated as a part of a device manufacturing method but can be used as an single method.

Abstract: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer.