Abstract: A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.

Abstract: A process for detecting mechanical and mechanochemical defects in the surface or edge of a silicon wafer resulting from a wafer manufacturing process. The present process comprises treating a surface of the silicon wafer with an aqueous etch solution comprising hydrofluoric acid and an oxidizing agent, followed by optical inspection of the treated wafer surface prior to subjecting that surface to conventional mechanical or mechanochemical polishing. The present process affords the means by which to more efficient identify wafers having such defects, thus reducing wafer manufacturing time and cost.

Abstract: A method for repairing a wafer carrier after plural processing operations during which the carrier holds a plurality of semiconductor wafers in a processing apparatus which removes wafer material by at least one of abrading and chemical reaction. The wafer carrier has holes for receiving respective ones of the wafers and removable annular inserts for each hole. Each insert is receivable in a respective one of the holes for engaging a peripheral edge of one of the wafers. The thickness of the insert is reduced during the successive processing operations. The method includes removing at least one of the inserts from the wafer carrier and installing at least one new insert in the wafer carrier having a thickness substantially greater than a minimum thickness to extend the useful life of the wafer carrier and to improve the flatness and parallelism of surfaces of wafers processed using the wafer carrier.

Abstract: A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.

Abstract: A semiconductor wafer manufacturing process is disclosed wherein extremely flat, double side polished semiconductor wafers having enhanced gettering characteristics on the back surface are produced. The process includes creating an enhanced gettering layer on the back surface of a double side polished semiconductor wafer. A protective layer is subsequently grown on the enhanced gettering layer and the wafer is subsequently subjected to a second double side polishing operation. Finally, the protective layer is removed and the front surface final polished to produce an extremely flat semiconductor wafer having enhanced gettering characteristics on the back surface.

Abstract: The present invention relates to an aqueous etching solution, a method for tailoring the composition of the solution to provide a desired surface quality for a given quantity of stock to be removed, a process for etching a silicon wafer using said solution.

Abstract: A method for processing a semiconductor wafer sliced from a single-crystal ingot comprises subjecting the front and back surfaces of the wafer to a lapping operation to reduce the thickness of the wafer and to remove damage caused during slicing of the wafer. The wafer is then subjected to an etching operation to further reduce the thickness of the wafer and to further remove damage remaining after the lapping operation. The wafer is subsequently subjected to a double-side polishing operation to uniformly remove damage from the front and back surfaces caused by the lapping and etching operations, thereby improving the flatness of the wafer and leaving polished front and back surfaces. Finally, the back surface of the wafer is subjected to a back surface damaging operation in which damage is induced in the back surface of the wafer while the front surface is substantially protected against being damaged or roughened.

Abstract: A multi-step polishing process for producing dopant-striation-free semiconductor wafers. The process includes polishing a surface of the wafer using a sodium stabilized colloidal silica slurry, an amine accelerant, and an alkaline etchant, polishing the surface of the wafer using a sodium stabilized colloidal silica slurry and an alkaline etchant which is substantially free of amine accelerants, and polishing the surface of the wafer using an ammonia stabilized colloidal silica slurry and an alkaline etchant which is substantially free of amine accelerants.

Abstract: A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges.

Abstract: A method of conditioning a polishing pad for use with a polishing machine. The method includes installing the polishing pad to be conditioned on the polishing machine's platen and applying a conditioning load force to the pad. In addition, the method includes supplying a slurry to the pad at a conditioning flow rate. The conditioning load force is greater than a polishing load force applied during a conventional wafer polishing cycle to compress the pad and the conditioning flow rate is greater than a polishing flow rate at which the slurry is supplied during the wafer polishing cycle to load the pad's pores with abrasive material. The method also includes the step of operating the polishing machine for a conditioning cycle while applying the conditioning load force and supplying the slurry at the conditioning flow rate. In this manner, the polishing pad is conditioned for use with the polishing machine for subsequently polishing the semiconductor wafers with the conditioned pad.

Abstract: A process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped. The process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising citric acid into which sonic energy is being directed to remove metallic contaminants which may be present on the surface of the wafer. After being immersed in the citric acid bath, the wafer is contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising an alkaline component and a surfactant, and into which sonic energy is being directed.

Abstract: A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.

Abstract: A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.

Abstract: Process for etching a semiconductor wafer which includes the steps of rotating the wafer, and contacting the rotating wafer with a flowing froth, the froth being formed, at least in part, by the effervescence of a pressurized etchant containing a dissolved gas.