Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.

Abstract: Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

Abstract: Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

Abstract: Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

Abstract: Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

Abstract: Methods for removing a melt of silicon from a crucible used in a silicon ingot growth process and associated wick assemblies are disclosed. The wick is made of porous carbon that ignites upon reaching an ignition temperature causing relatively rapid and relatively large volume take-up of silicon from the crucible.

Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.

Abstract: A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

Abstract: An elongate element (300) for a flexible pipe body (100) and method of producing the same are disclosed. The method includes inserting a first fiber element (304) in a crush resistant elongate tube element (302), wherein the first fiber element is suitable for monitoring at least one of strain, temperature and acoustic properties; inserting a further fiber element (306) in the tube element, wherein the further fiber element is suitable for curing a matrix material (308); and inserting a matrix material into the tube element to fill at least a length of the tube element such that the first and further fibers elements within that length are surrounded by matrix material.

Abstract: A flexible pipe body and method of manufacturing a flexible pipe body are disclosed. The flexible pipe body includes a fluid retaining layer for preventing ingress of fluid into the flexible pipe body from an environment outside of the flexible pipe body; and a fibre element arranged generally along a longitudinal axis of the fluid retaining layer.

Abstract: An elongate element (300) for a flexible pipe body (100) and method of producing the same are disclosed. The method includes inserting a first fibre element (304) in a crush resistant elongate tube element (302), wherein the first fibre element is suitable for monitoring at least one of strain, temperature and acoustic properties; inserting a further fibre element (306) in the tube element, wherein the further fibre element is suitable for curing a matrix material (308); and inserting a matrix material into the tube element to fill at least a length of the tube element such that the first and further fibres elements within that length are surrounded by matrix material.

Abstract: A process is provided for treating coolant fluid used in wire-saw cutting of semiconductor wafers and which contains silicon-containing impurities. The process comprises changing the properties of the used coolant fluid so that the silicon-containing impurities may be filtered and separated from the coolant fluid to thereby yield a coolant fluid filtrate suitable for use in a wire-saw cutting operation.

Abstract: An antenna array and method of operation are disclosed for providing a very thin antenna arrangement with large coverage area for RFID applications and long distance sensitivity. The antenna arrangement comprises two or more antenna elements, each element comprises a planar spiral of conductive material with a feed terminal at one end of the spiral and preferably at its outer end. Each adjacent couple of antenna elements may be arranged with the direction of rotation of their spiral being in opposite directions. Each antenna element may be fed with RFID signal independently from the other antenna elements and preferably the antenna elements are fed one at a time.

Abstract: A system and method is provided for a mobile computer communication interface. One embodiment includes a mobile computer communication interface. The mobile computer communication interface comprises a transceiver operative to send and receive wireless communications to and from a host computer. The mobile computer communication interface may also comprise a touch-screen display, the touch-screen display being operative to receive inputs from a user and remotely display outputs provided by the host computer. The mobile computer communication interface may also comprise a controller operative to wirelessly access and remotely control the host computer in response to inputs from the touch-screen display.

Abstract: Systems and methods are disclosed for utilizing one or more tablet computer assemblies in a portable communications system. A tablet computer assembly includes a global positioning system module, an L-band transceiver, and a processing system. The global positioning system module that produces location information associated with the position of the tablet computer assembly. The L-band transceiver broadcasts the location information to at least one portable communication device through a relay network and receives location information from the at least one portable communications device via the relay network. The processing unit provides messages to the L-band transceiver and updates a display associated with the tablet computer assembly according the received location information and the location information produced at the global positioning system module.

Abstract: Systems and methods are disclosed for utilizing personal digital assistants in a portable communications system. A personal digital assistant includes a global positioning system module, an L-band transceiver, and a processing system. The global positioning system module produces location information associated with the position of the personal digital assistant. The L-band transceiver broadcasts the location information to a network of at least one other personal digital assistant and receives location information from at least one other personal digital assistant within the network via a communications satellite. The processing system provides messages to the L-band transceiver and updates a display associated with the personal digital assistant according the received location information and the location information produced at the global positioning system module.