Patents by Inventor Henry G. Hughes

Henry G. Hughes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor processing utilizing carbon containing thick film spin-on glass
    Patent number: 4801560
    Abstract: Described is a process of utilizing carbon containing thick film spin-on glass with a directional etching process, such as RIE, or a downstream etching mechanism. As a layer of photoresist is etched from the surface of the spin-on glass, a skin layer of carbonless glass results. The skin layer protects the remaining glass from having the carbon removed allowing the use of spin-on glass on the order of 10,000 Angstroms thick.
    Type: Grant
    Filed: October 2, 1987
    Date of Patent: January 31, 1989
    Assignee: Motorola Inc.
    Inventors: Thomas E. Wood, Henry G. Hughes
  • Spin-on glass for use in semiconductor processing
    Patent number: 4798629
    Abstract: A spin-on glass consisting of, by volume: 1.0 parts tetraethoxysilane (TEOS, also known as tetraethylorthosilicate), methyltriethoxysilane, and dimethyldiethoxysilane in a 2/1/1 ratio; 1.1 parts ethanol (EtOH, also known as ethyl alcohol); 0.0002 parts hydrochloric acid (HCl); and 0.26 parts water (H.sub.2 O).
    Type: Grant
    Filed: October 22, 1987
    Date of Patent: January 17, 1989
    Assignee: Motorola Inc.
    Inventors: Thomas E. Wood, Henry G. Hughes
  • Method for passivating a semiconductor junction
    Patent number: 4717641
    Abstract: A method of passivating exposed junctions on a semiconductor device is provided by the use of fritted glass and a rapid heating device. The uniform distribution of heat from the rapid heating device is used to fire the fritted glass that is covering the exposed junction. The results of this combination is an increase in device yields due to less leakage across the junction.
    Type: Grant
    Filed: January 16, 1986
    Date of Patent: January 5, 1988
    Assignee: Motorola Inc.
    Inventors: Emanuel Belmont, Henry G. Hughes
  • Plasma development process for photoresist
    Patent number: 4241165
    Abstract: After exposure to radiation photoresist may be developed by a dry process using a gas plasma, preferably an oxygen plasma. The process can be used for chemical milling, photolithography, printed circuit board and photomask manufacture and it is particularly advantageous in the manufacture of semiconductors. The plasma development process can be followed by plasma etch and strip processes without requiring removal of the work piece from the plasma reactor.
    Type: Grant
    Filed: September 5, 1978
    Date of Patent: December 23, 1980
    Assignee: Motorola, Inc.
    Inventors: Henry G. Hughes, Jed V. Keller