Abstract: A process of making a reinforced elastomer and toy for pet made from same. The elastomer body may include rubber, thermoplastic resin, and elastomeric polyvinyl chloride. The elastomeric material is reinforced with fibers. Flavoring agents are mixed in the elastomeric body to produce a compression resistant and long-lasting scented body with durable fragrance. The fibers may be bonded to an outer surface of the elastomeric material.

Abstract: The present application provides a gas showerhead including a gas distribution and diffusion plate and a water cooling plate, the gas distribution and diffusion plate includes several columns of first gas diffusion passages connecting to a first reactant gas source and several columns of second gas diffusion passages connecting to a second reactant gas source; the water cooling plate having cooling liquid passages is arranged below the gas distribution and diffusion plate, and the water cooling plate is provided with first gas outlet passages provided for the reactant gas in the first gas diffusion passages to flow out and second gas outlet passages provided for the reactant gas in the second gas diffusion passages to flow out, so as to isolatedly feed at least two reactant gases into a reaction chamber.

Abstract: The present application provides a gas showerhead including a gas distribution and diffusion plate and a water cooling plate, the gas distribution and diffusion plate includes several columns of first gas diffusion passages connecting to a first reactant gas source and several columns of second gas diffusion passages connecting to a second reactant gas source; the water cooling plate having cooling liquid passages is arranged below the gas distribution and diffusion plate, and the water cooling plate is provided with first gas outlet passages provided for the reactant gas in the first gas diffusion passages to flow out and second gas outlet passages provided for the reactant gas in the second gas diffusion passages to flow out, so as to isolatedly feed at least two reactant gases into a reaction chamber.

Abstract: A showerhead that injects two process gases into the processing chamber via separate sets of holes. The showerhead is constructed of upper plate and lower plate. Upper plate has a first set of holes. The lower plate has two sets of holes: one set is aligned with the holes in the upper plate, while the second set has no corresponding holes in the upper plate. Both sets of holes in the lower plate are made to have two different diameters: a larger diameter extending from the top surface of the lower plate, while a smaller diameter extends from the bottom surface and meets with the larger diameter. A set of pipes are inserted through the holes in the upper plate and the corresponding holes in the lower plate, and are sealingly brazed to both plates. Cooling channels may be provided in the lower plate.

Abstract: A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Abstract: A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Abstract: A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness.

Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Abstract: An assembly and method for delivering a reactant material onto a substrate is described and which includes a delivery member which has a first surface, and an opposite second surface, and wherein the second surface is positioned adjacent to a substrate, and wherein an elongated substantially continuous channel is formed in the second surface of the delivery member, and which is coupled in fluid flowing relation relative to a source of reactant material, and wherein the elongated substantially continuous channel delivers the reactant material onto the substrate.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness.

Abstract: An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: An apparatus for wafer processing that includes a wafer reaction chamber containing a heater within, the heater including an interior volume containing at least one heating element, a fluid inlet port, and a fluid vent port positioned to vent the fluid outside the wafer reaction chamber. Additionally, the interior volume has a seal that isolates it from the wafer reaction chamber.