Abstract: An apparatus comprising a semiconductor processing chamber, a plasma generator, and a pipe connecting a semiconductor processing chamber and the plasma generator. The plasma generator includes a generation chamber, a radio frequency generator which generates an ion plasma within the generation chamber, a magnetic device which confines the plasma primarily within a center region of the generation chamber, and a thermally conductive member disposed around the outer surface of the generation chamber for removing heat away from the chamber.

Abstract: A semiconductor processing system comprising a semiconductor processing chamber, a light, a temperature detector, and a member. The light is positioned to heat the confines of the chamber. The temperature detector measures the temperature at the location within the chamber. The member has a translucent quartz shell and opaque core and shields the location from light emanating from the light source.

Abstract: A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.