Abstract: A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.

Abstract: A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.

Abstract: A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.

Abstract: An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.

Abstract: A new and improved method for exposing alignment marks on a substrate by locally cutting through a metal or non-metal layer or layers sequentially deposited on the substrate above the alignment marks, using focused ion beam (FIB) technology. In a preferred embodiment, a method for exposing alignment marks on a substrate can be carried out by first providing a substrate that has multiple alignment marks provided thereon and at least one overlying opaque layer, typically but not necessarily metal, deposited on the substrate above the alignment marks. A focused ion beam is then directed against the overlying opaque layer or layers to cut through the layer or layers and expose the alignment marks on the substrate. A noble gas, preferably argon, is typically used as the ion source for the focused ion beam.

Abstract: A method of integrating a post-etching cleaning process with deposition for a semiconductor device. A substrate having a damascene structure formed by etching a dielectric layer formed thereon using an overlying photoresist mask as an etching mask is provided. A cleaning process is performed by a supercritical fluid to remove the photoresist mask and post-etching by-products. An interconnect layer is formed in-situ in the damascene structure using the supercritical fluid as a reaction medium, wherein the cleaning process and the subsequent interconnect layer formation are performed in one process chamber or in different process chambers of a processing tool.

Abstract: A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3? variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.

Abstract: A planarizing method for forming a patterned planarized aperture fill layer within an aperture employs a planarizing stop layer formed of a reductant based material, such as but not limited to a hydrogenated silicon nitride material. The reductant based material provides the planarizing stop layer with enhanced planarizing stop properties. The method is particularly useful within the context of CMP planarizing methods.

Abstract: The invention is a six-card-stud poker game. A Player who is not a Banker may play Poker Bet playing against a Banker's hand, and/or one or up to seven side bets betting on the contents of the Player's own hand. From their six dealt cards, every Player and the Banker each then selects and keeps his best 5-card poker hand and discards one card. A Player's Poker Bet wager wins if the Player is dealt a hand of six-card 8 high or six-card Straight Flush, or if the Player's best 5-card poker hand ranks the same as or higher than the Banker's best 5-card poker hand. A Player's side-bet wager wins a Player's best 5-card poker hand is one of predetermined winning hands of the type of the side bet he bets on. The Poker Bet wager and seven side-bet wagers are eight independent wagers and are settled separately.

Abstract: A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.

Abstract: A method and apparatus for curing and modifying a low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer which includes an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C—Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.

Abstract: System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.

Abstract: The invention relates to disks for conditioning pads used in the chemical mechanical polishing of semiconductor wafers, and a method of fabricating the pads. In one embodiment, the conditioning pad includes multiple, pyramid-shaped, truncated protrusions which are cut or shaped in the surface of a typically stainless steel substrate. Each of the truncated protrusions includes a plateau in the top thereof. A seed layer, typically titanium nitride (TiN), is provided on the surface of the protrusions, and a contact layer such as diamond-like carbon (DLC) or other suitable film is provided over the seed layer. In another embodiment, each of the protrusions is pyramid-shaped and includes a pointed apex at the top thereof.

Abstract: This invention is mainly a 7-card stud poker game, played with at least one standard poker deck of 52 cards, plus at least one Joker. After a player places a Poker wager and/or a Pair Of Aces Or Better wager, the player then has the option to place a Bonus wager, against a banker. Each said wager automatically wins if the player is dealt a 7-Card 9 High hand or a 7-Card Straight Flush; otherwise, the player's Poker wager wins if the player's best 5-card poker hand ranks higher than or the same as the banker's best 5-card poker hand; the player's Pair Of Aces Or Better wager wins if the player's best 5-card poker hand is a pair of Aces or better; the player's Bonus wager wins if the player's best 5-card poker hand ranks higher than or the same as the banker's with a predetermined hand or better.

Abstract: System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.

Abstract: A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.

Abstract: A method of unblinding an alignment mark comprising the following steps. A substrate having a cell area and an alignment mark within an alignment area is provided. An STI trench is formed into the substrate within the cell area. A silicon oxide layer is formed over the substrate, filling the STI trench and the alignment mark. The silicon oxide layer is planarized to form a planarized STI within the STI trench and leaving silicon oxide within the alignment mark to form a blinded alignment mark. A wet chemical etchant is applied within the alignment mark area over the blinded alignment mark to at least partially remove the silicon oxide within the alignment mark. The remaining silicon oxide is removed from within the blinded alignment mark to unblind the alignment mark. A drop etcher apparatus is also disclosed.

Abstract: A method and apparatus for curing and-modifying a-low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer comprised of an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C-Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.

Abstract: A method of unblinding an alignment mark comprising the following steps. A substrate having a cell area and an alignment mark within an alignment area is provided. An STI trench is formed into the substrate within the cell area. A silicon oxide layer is formed over the substrate, filling the STI trench and the alignment mark. The silicon oxide layer is planarized to form a planarized STI within the STI trench and leaving silicon oxide within the alignment mark to form a blinded alignment mark. A wet chemical etchant is applied within the alignment mark area over the blinded alignment mark to at least partially remove the silicon oxide within the alignment mark. The remaining silicon oxide is removed from within the blinded alignment mark to unblind the alignment mark. A drop etcher apparatus is also disclosed.

Abstract: A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.