Abstract: A correlated double sampling (CDS) circuit includes a correction circuit configured to receive an input pixel signal through a first node via a column line, correct the input pixel signal, and output the corrected pixel signal through a second node; and a comparator including first and second input terminals, the first input terminal being connected to the second node and being configured to receive the corrected pixel signal, and the second input terminal configured to receive a ramp signal, the comparator being configured to compare the corrected pixel signal with the ramp signal and output a comparison signal indicating a result of the comparing, wherein the correction circuit includes, a first capacitor connected between the first and second nodes, and one or more metal lines disposed adjacent to the first capacitor, and wherein at least one other capacitor is formed by the first capacitor and the metal line.

Abstract: An analog-to-digital converter (ADC) within an image sensor includes a comparator comparing a ramp signal with an image signal, and a counter generating a count result in response to the comparison by counting a clock during a counting interval. The ADC determines whether a first counting interval for the counter is less than a reference interval, and if the first counting interval is less than the reference interval the counting interval is a first counting interval, else the counting interval is a second counting interval.

Abstract: A pixel array includes pixels arranged in a grid, with separate readout paths configured to readout image data from different subsets of the pixels in the array. An image sensor may employ image data from one subset of pixels, which may include fewer pixels than another subset of pixels in the array, to quickly form an image.

Abstract: An analog-to-digital converter includes a gain amplification unit configured to receive a pixel signal at a first node and to amplify a gain of the pixel signal, a first capacitor connected between the first node and a second node, an amplifier configured to receive and amplify a signal output from the gain amplification unit and the first capacitor, and a conversion circuit configured to convert an output signal of the amplifier to a digital signal based on a reference signal and output the digital signal as a first output signal.

Abstract: A programmable gain amplifier includes a sampling circuit, a source follower, a first capacitor and an error amplifier. The sampling circuit is configured to perform correlated double sampling on an input signal using a reference voltage. The first capacitor is connected between the sampling circuit and the source follower. The error amplifier is connected between an input terminal of the source follower and an output terminal of the source follower. The error amplifier is configured to reset a voltage of the output terminal of the source follower to the reference voltage during a source follower reset operation.

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract: A CDS circuit includes first capacitors; second capacitors; and a switch arrangement which, in response to a switch control signal, connects the first capacitors in series between a pixel signal output node and a ground to compress the pixel signal and connects the second capacitors in series between a ramp signal output node and the ground to compress the ramp signal, or connects the first capacitors in parallel between the pixel signal output node and a first input node of the comparator and connects the second capacitors in parallel between the ramp signal output node and a second input node of the comparator.

Abstract: One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

Abstract: An image sensor includes a pixel array and a plurality of pairs of column lines. The pixel array includes a plurality of unit pixel areas arranged in a plurality of rows and columns. Each of the unit pixel areas includes a readout circuit connected to a corresponding pair of column lines, and first and second photo-electric conversion devices sharing the readout circuit. Each of the unit pixel areas is configured to output a first pixel signal corresponding to a photoelectron generated by the first photo-electric conversion device through the first column line, and to output a second pixel signal corresponding to a photoelectron generated by the second photo-electric conversion device through the second column line.

Abstract: An image sensor includes a pixel array and an analog-to-digital (A/D) conversion unit. The pixel array generates an analog signal by sensing an incident light. The A/D conversion unit generates a digital signal in a first operation mode by performing a sigma-delta A/D conversion and a cyclic A/D conversion with respect to the analog signal and generates the digital signal in a second operation mode by performing a single-slope A/D conversion with respect to the analog signal. The image sensor provides a high-quality image in a still image photography mode and a dynamic image video mode.

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract: A method of operating an image processing system includes storing differences between first analog pixel signals and second analog pixel signals and converting the stored differences to one-bit digital signals, the first analog pixel signals being output from a plurality of pixels and corresponding to a previous frame, and the second analog pixel signals being output from the plurality of pixels and corresponding to a current frame.

Abstract: An image sensor includes a reference voltage generation unit that generates a reference voltage that alternately decreases and increases at a constant rate in an operation mode of the image sensor to convert analog signals of detected incident light to a digital value using the reference voltage to determine an intensity of the incident light with high sensitivity and high signal-to-noise ratio.

Abstract: One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

Abstract: A CDS circuit is provided. The CDS circuit includes a signal compressor which compresses each of a pixel signal and a ramp signal using capacitive dividing and outputs a compressed pixel signal and a compressed ramp signal, and a comparator which compares the compressed pixel signal with the compressed ramp signal and outputs a comparative signal corresponding to a comparison result.

Abstract: An image sensor includes a first column pair and a second column pair among a plurality of columns of a pixel array, an analog-to-digital converter pair, and a switch arrangement circuit configured to connect the first column pair with the analog-to-digital converter pair in response to first switch control signals such that two rows among a plurality of rows in the pixel array are read during a single access time.

Abstract: One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

Abstract: A correlated double sampling circuit includes a delta-sigma modulator, a selection circuit, and an accumulation circuit. The delta-sigma modulator is configured to receive an input signal, delta-sigma modulate the input signal, and output a modulation signal. The selection circuit is configured to invert the modulation signal and selectively output one of the modulation signal and an inverted modulation signal in response to a selection signal corresponding to an operation phase. The accumulation circuit is configured to generate a first accumulation result by performing an accumulation process on one of the modulation signal and the inverted modulation signal in a first operation phase, and generate a second accumulation result by performing the accumulation process on the first accumulation result and the other one of the modulation signal and the inverted modulation signal in a second operation phase.

Abstract: An image sensor comprises a plurality of pixel units connected to a column line, a signal process circuit configured to process a signal output from the column line according to a switching operation, and a kick-back noise blocking circuit configured to reduce kick-back noise caused by the switching operation. Each of the pixel units includes a photoelectric conversion element. The kick-back noise blocking circuit is connected between the column line and the signal process circuit.

Abstract: A ramp signal generator includes: a row decoder which receives a row control signal from a timing controller and generates one or more row select signals, a first column decoder which receives a first column control signal from the timing controller and generates one or more first column select signals, a second column decoder which receives a second column control signal from the timing controller and generates one or more second column select signals, and a current cell array which is activated by the one or more first column select signals, the one or more second column select signals, and the one or more row select signals, and includes at least one current cell which generates at least one unit current, and generates an output current by summing the generated at least one unit current.