Abstract: A radiation-emitting semiconductor body is provided which, besides an epitaxial semiconductor layer sequence having an active zone that is suitable for generating electromagnetic radiation, has a carrier layer that is intended to mechanically stabilize the epitaxial semiconductor layer sequence. The semiconductor body furthermore has contact structures for electrical contacting of the semiconductor body, which respectively have a volume region and a surface bonding region. The surface bonding region is formed from a material which is different from the material of the volume region.

Abstract: A method for producing an optoelectronic device includes providing a carrier, applying at least one first metal layer on the carrier, providing at least one optical component, applying at least one second metal layer on the at least one optical component, and mechanically connecting the carrier to the at least one optical component by the at least one first and the at least one second metal layer, wherein the connecting includes friction welding or is friction welding.

Abstract: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract: A method is disclosed for the manufacture of an optoelectronic component. A substrate has a first primary face and a second primary face that lies opposite the first primary face. A semiconductor body that is capable of emitting electromagnetic radiation from a front side is attached to the first primary face of the substrate. A covering that is transparent to the radiation from the optoelectronic semiconductor body is applied to at least the front side of the semiconductor body. The covering is given the form of an optical element by using a closed cavity that is shaped with the contour of the optical element.

Abstract: An illumination unit comprising a luminescence diode chip mounted on a chip carrier and comprising an optical waveguide is specified. The optical waveguide is joined together from at least two separate parts, wherein the luminescence diode chip is encapsulated by one of the parts of the optical waveguide. A method for producing a luminescence diode chip of this type and also an LCD display comprising an illumination unit of this type are furthermore specified.

Abstract: The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).

Abstract: An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side and the semiconductor chip is mounted on the mounting side, and at least one structured electrical contact film located on the top.

Abstract: The invention relates to a method for producing an optical and a radiation-emitting component by a molding process, and to an optical and a radiation-emitting component having well-defined viscosity.

Abstract: A housing for an optoelectronic component which includes a carrier with a chip mounting surface is disclosed. An optical element which is produced separately from the carrier is applied to the carrier. The chip mounting surface and the optical element define a parting plane, the parting plane between carrier and optical element being arranged in the plane of the chip mounting surface. Also disclosed is an optoelectronic component having a housing of this type and a method for producing an optoelectronic component of this type.

Abstract: A leadframe, a housing, a radiation-emitting component formed therefrom, and a method for producing the component includes the leadframe having a mount part with at least one bonding wire connecting area and at least one electrical solder connecting strip into which a separately manufactured thermal connecting part, which has a chip mounting area, is linked. To form a housing, the leadframe is sheathed, preferably, with a molding compound, with the thermal connecting part being embedded such that it can be thermally connected from the outside.

Abstract: A method for producing an optoelectronic device includes providing a carrier, applying at least one first metal layer on the carrier, providing at least one optical component, applying at least one second metal layer on the at least one optical component, and mechanically connecting the carrier to the at least one optical component by the at least one first and the at least one second metal layer, wherein the connecting includes friction welding or is friction welding.

Abstract: According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.

Abstract: An LED housing having a housing cavity, a carrier element, LED chips, the LED housing being formed in such a way that it may connect a plurality of LED housings of identical construction and, by its shaping, is additionally mountable in various ways.

Abstract: LED with a low color temperature up to 3500 K, comprising a blue-emitting LED with two phosphors in front of it, a first phosphor from the class of the oxynitridosilicates, having a cation M, which is doped with divalent Europium, and has the empirical formula M(1-c)Si2O2N2:Dc, with M=Sr, or M=Sr(1-x-y)BayCax with x+y<0.5 being used, the oxynitridosilicate completely or predominantly comprising the high-temperature-stable modification HT, and a second phosphor from the class of the nitridosilicates of formula (Ca,Sr)2Si5N8:Eu.

Abstract: An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side and the semiconductor chip is mounted on the mounting side, and at least one structured electrical contact film located on the top.

Abstract: A luminescence conversion LED having a radiation emitting chip that is connected to electrical connections and is surrounded by a housing that comprises at least a basic body and a cap, the chip being seated on the basic body, in particular in a cutout of the basic body, and the primary radiation of the chip being converted at least partially into longer wave radiation by a conversion element, wherein the cap is formed by a vitreous body, the conversion means being contained in the vitreous body, the refractive index of the vitreous body being higher than 1.6, preferably at least n=1.7.

Abstract: An illumination device (1) for backlighting a display is disclosed. The illumination device comprises: at least one semiconductor body (3), suitable for generating electromagnetic radiation of a first wavelength range, a first wavelength conversion substance (30), which is disposed downstream of the radiation-emitting front side (6) of the semiconductor body (3) in the emission direction (8) thereof and is suitable for converting radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, and a second wavelength conversion substance (31), which is disposed downstream of the radiation-emitting front side (6) of the semiconductor body (3) in the emission direction (8) thereof and is suitable for converting radiation of the first wavelength range into radiation of a third wavelength range, which is different from the first and second wavelength ranges. A display comprising such an illumination device (1) is furthermore described.

Abstract: A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.

Abstract: A lighting device (1) comprises at least one element (2) emitting light which is at least in part visible, and at least one conversion medium (3), which converts at least part of the radiation emitted by the element (2) into radiation of another frequency. In addition, the lighting device (1) comprises at least one filter medium (4) which filters at least part of the radiation, and which is configured such that the quantity of the conversion medium (4) to be used is reduced for at least one predetermined colour saturation and/or one predetermined hue. This means that, compared with a light source corresponding to the lighting device (1) apart from the filter medium (4), savings are made in conversion medium (3) while achieving the same colour saturation or the same hue. Light of a predetermined colour saturation or of a predetermined hue may be efficiently generated by such a lighting device (1) and the lighting device (1) may be inexpensively produced.

Abstract: A chip arrangement for an optoelectronic component includes at least one semiconductor chip which emits electromagnetic radiation, and a connection arrangement which includes planes that are electrically insulated from one another, at least one plane having a cavity and at least one plane being a heat dissipating plane, wherein at least two electrically insulated conductors are arranged in at least the two planes, the semiconductor chip is arranged within the cavity and has at least two connection locations, and each of the connection locations is electrically conductively connected to a respective one of the conductors.