Abstract: Phosphor from the class of the oxynitridosilicates, having a cation M which is doped with divalent europium and having the empirical formula M(1-c)Si2O2N2:Dc, where M=Sr or M=Sr(1-x-y)BaYCax with x+y<0.5 is used, the oxynitridosilicate completely or predominantly comprising the high-temperature-stable modification HT.

Abstract: Optoelectronic component, having a housing body (2), an optoelectronic semiconductor chip (3) arranged in a recess (6) of the housing body, and having electrical terminals (1A, 1B), the semiconductor chip being electrically conductively connected to the electrical terminals of the leadframe. The housing body (2) is formed from an encapsulation material, with a filler which has a high degree of reflection in a wavelength range from the UV range.

Abstract: The illumination system makes simultaneous use of the color-mixing principle from blue, green and red (RGB mixing) and the principle of converting of a primary radiation emitted by an LED into light with a longer wavelength by a phosphor which absorbs this radiation, with at least two LEDs being used, of which a first LED emits primarily in the range from 340 to 470 nm (dominant wavelength) and a second LED emits in the red region at 600 to 700 nm (dominant wavelength), wherein the green component is produced by the primary radiation of the first LED being at least partially converted by a green-emitting phosphor, the green-emitting phosphor used being a phosphor from the class of the oxynitridosilicates, having a cation M and the empirical formula M(1?c)Si2O2N2:Dc, M comprising Sr as a constituent and D being doped with divalent europium, where M=Sr or M=Sr(1?x?y)BayCax with x+y<0.5 is used, the oxynitridosilicate completely or predominantly comprising the high-temperature-stable modification HT.

Abstract: The invention describes a method for producing a light-emitting-diode (LED) light source, particularly comprising mixed-color LEDs, wherein at least a portion of primary radiation emitted by a chip is transformed by luminescence conversion. Said chip comprises a front-side (i.e., the side facing in the direction of radiation) electrical contact to whose surface a luminescence conversion material is applied in the form of a thin layer. Prior to coating, the front-side electrical contact is raised by the application of an electrically conductive material to the electrical contact surface. The method enables specific color coordinates to be adjusted selectively by monitoring the color coordinates (IEC chromaticity diagram) and thinning the layer of luminescence conversion material. In addition, the method is suited in particular for simultaneously producing a plurality of LED light sources from a multiplicity of similar chips in a wafer composite.

Abstract: A method is disclosed for the manufacture of an optoelectronic component. A substrate has a first primary face and a second primary face that lies opposite the first primary face. A semiconductor body that is capable of emitting electromagnetic radiation from a front side is attached to the first primary face of the substrate. A covering that is transparent to the radiation from the optoelectronic semiconductor body is applied to at least the front side of the semiconductor body. The covering is given the form of an optical element by using a closed cavity that is shaped with the contour of the optical element.

Abstract: A method for patterned metallization of a plastic-containing body, which comprises the steps of producing the body via a two-component injection-molding process with at least two plastics, one of which is non-metallizable, and metallizing the body in such a way that a metallized region and a non-metallized region are formed, wherein the non-metallized region is determined by the non-metallizable plastic. A method for the patterned metallization of a plastic-containing body in particular a package body for an optoelectronic device is also provided.

Abstract: A housing accommodating a semiconductor chip is set out. The housing and chip may be used for sending and/or receiving radiation. Popular applications of the housing may be in light emitting diodes. The housing includes a conductor strip that is punched into two electrically isolated portions. The housing further includes a cavity extending inwards from the top of the housing. The conductor portions include respective areas that are exposed at the bottom of the cavity. The semiconductor chip is bonded to one of the exposed areas and a wire bonds the chip to the second exposed area. The conductor portions also terminate in exposed electrodes, which allow for electrical connection of the chip with external devices. A window is formed in the cavity and the walls of the housing that form the cavity may be made of a reflective material. The electrodes remain unexposed to the window but for any residual areas about the chip and bonding wire within the first and second exposed areas.

Abstract: A light source element is employed back-lighting of liquid crystal displays and that comprises an obliquely placed light exit face and/or light entry face. At its surfaces, the light waveguide is surrounded by reflectors into which suitable aperture regions are potentially formed. A plurality of light sources and/or a more direct view is provided and, thus, a corresponding increase of the luminance results. A method is also provided for the manufacture of a light source element with an integrated reflector.

Abstract: A light source element is employed back-lighting of liquid crystal displays and that comprises an obliquely placed light exit face and/or light entry face. At its surfaces, the light waveguide is surrounded by reflectors into which suitable aperture regions are potentially formed. A plurality of light sources and/or a more direct view is provided and, thus, a corresponding increase of the luminance results. A method is also provided for the manufacture of a light source element with an integrated reflector.

Abstract: A method for producing a surface mounting optoelectronic component comprises the following steps: readying a base body with the optoelectronic transmitter and/or receiver arranged in a recess of the base body, filling the recess of the base body with a transparent, curable casting compound, and placing the optical device onto the base body, whereby the optical device comes into contact with the casting compound.

Abstract: A radiation-emitting and/or radiation-receiving semiconductor component comprising a radiation-emitting and/or radiation-receiving semiconductor chip, a molded plastic part which is transparent to an electromagnetic radiation to be emitted and/or received by the semiconductor component and by which the semiconductor chip is at least partially overmolded, and external electrical leads that are electrically connected to electrical contact areas of the semiconductor chip. The molded plastic part is made of a reaction-curing silicone molding compound. A method of making such a semiconductor component is also specified.

Abstract: An illumination unit comprising a luminescence diode chip mounted on a chip carrier and comprising an optical waveguide is specified. The optical waveguide is joined together from at least two separate parts, wherein the luminescence diode chip is encapsulated by one of the parts of the optical waveguide. A method for producing a luminescence diode chip of this type and also an LCD display comprising an illumination unit of this type are furthermore specified.

Abstract: An optoelectronic component comprising a housing and a luminescence diode chip arranged in the housing is specified, which component emits a useful radiation. The housing has a housing material which is transmissive to the useful radiation and which is admixed with radiation-absorbing particles in a targeted manner for setting a predetermined radiant intensity or luminous intensity of the emitted useful radiation. The radiation-absorbing particles reduce the radiant intensity or the luminous intensity by a defined value in a targeted manner in order thus to set a predetermined radiant intensity or luminous intensity for the component. A method for producing an optoelectronic component of this type is additionally disclosed.

Abstract: A surface-mounted component, comprising an optoelectronic semiconductor chip, a molded body integrally molded onto the semiconductor chip, a mounting area formed at least in places by a surface of the molded body, at least one connection location and side areas of the component which are produced by means of singulation.

Abstract: A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.

Abstract: A luminescence conversion LED having a radiation emitting chip that is connected to electrical connections and is surrounded by a housing that comprises at least a basic body and a cap, the chip being seated on the basic body, in particular in a cutout of the basic body, and the primary radiation of the chip being converted at least partially into longer wave radiation by a conversion element, wherein the cap is formed by a vitreous body, the conversion means being contained in the vitreous body, the refractive index of the vitreous body being higher than 1.6, preferably at least n=1.7.

Abstract: The invention describes a method for producing a light-emitting-diode (LED) light source, particularly comprising mixed-color LEDs, wherein at least a portion of primary radiation emitted by a chip is transformed by luminescence conversion. Said chip comprises a front-side (i.e., the side facing in the direction of radiation) electrical contact to whose surface a luminescence conversion material is applied in the form of a thin layer. Prior to coating, the front-side electrical contact is raised by the application of an electrically conductive material to the electrical contact surface. The method enables specific color coordinates to be adjusted selectively by monitoring the color coordinates (IEC chromaticity diagram) and thinning the layer of luminescence conversion material. In addition, the method is suited in particular for simultaneously producing a plurality of LED light sources from a multiplicity of similar chips in a wafer composite.

Abstract: Disclosed is a wavelength-converting converter material comprising at least one wavelength-converting phosphor comprising phosphor particles, wherein a portion of said phosphor or all of said phosphor is present in the form of nanoparticles. Also disclosed is a light-emitting optical component comprising such a converter material and a method for producing such components.

Abstract: A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area.

Abstract: The invention concerns an LED arrangement with at least one LED chip comprising a radiation decoupling surface through which the bulk of the electromagnetic radiation generated in the LED chip is decoupled. Arranged on the radiation decoupling surface is at least one phosphor layer for converting the electromagnetic radiation generated in the LED chip. A housing envelops portions of the LED chip and the phosphor layer.