Abstract: In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.

Abstract: In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.

Abstract: A method for producing an electronic component and an electronic component, having barrier layers for the encapsulation of the component. The method involves providing a substrate (1) with at least one functional layer (22), and an electronic component, applying at least one first barrier layer (3) on the functional layer (22) by way of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by way of plasma-enhanced chemical v0apor deposition (PECVD).

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Abstract: A device that includes a component and an encapsulation arrangement for the encapsulation of the component with respect to moisture and/or oxygen, wherein the encapsulation arrangement has a first layer and thereabove a second layer on at least one surface of the component, the first layer and the second layer each comprise an inorganic material, and the second layer is arranged directly on the first layer.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.

Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate with at least one functional layer, applying at least one first barrier layer on the functional layer via plasma enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer on the functional layer by means of plasma-enhanced chemical vapor deposition (PECVD), where the at least one first barrier layer is applied at a temperature of less than 100° C.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

Abstract: An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to the dielectric layer and to the metal layer.

Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Abstract: A method for producing an electronic component and an electronic component, having barrier layers for the encapsulation of the component. The method involves providing a substrate (1) with at least one functional layer (22), and an electronic component, applying at least one first barrier layer (3) on the functional layer (22) by way of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by way of plasma-enhanced chemical v0apor deposition (PECVD).

Abstract: A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).

Abstract: An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to the dielectric layer and to the metal layer.