Patents by Inventor Heribert Zull
Heribert Zull has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8772911Abstract: A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.Type: GrantFiled: February 10, 2011Date of Patent: July 8, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Tony Albrecht, Markus Maute, Martin Reufer, Heribert Zull
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Publication number: 20140141549Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate with at least one functional layer, applying at least one first barrier layer on the functional layer via plasma enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer on the functional layer by means of plasma-enhanced chemical vapor deposition (PECVD), where the at least one first barrier layer is applied at a temperature of less than 100° C.Type: ApplicationFiled: January 24, 2014Publication date: May 22, 2014Inventors: Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Markus Klein, Karsten Heuser
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Publication number: 20140117569Abstract: A device that includes a component and an encapsulation arrangement for the encapsulation of the component with respect to moisture and/or oxygen, wherein the encapsulation arrangement has a first layer and thereabove a second layer on at least one surface of the component, the first layer and the second layer each comprise an inorganic material, and the second layer is arranged directly on the first layer.Type: ApplicationFiled: January 8, 2014Publication date: May 1, 2014Inventors: Christian SCHMID, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Markus Klein, Karsten Heuser
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Publication number: 20140113390Abstract: A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components.Type: ApplicationFiled: August 23, 2013Publication date: April 24, 2014Inventors: Andreas Ploessl, Heribert Zull
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Publication number: 20140080287Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.Type: ApplicationFiled: March 16, 2012Publication date: March 20, 2014Applicant: OSRAM Opto Semiconductors GmbHInventors: Heribert Zull, Korbinian Perzlmaier, Andreas Ploessl, Thomas Veit, Mathias Kampf, Jens Dennemarck, Bernd Bohm
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Publication number: 20140080286Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.Type: ApplicationFiled: April 4, 2012Publication date: March 20, 2014Applicant: Osram Opto Semiconductors GMBHInventors: Korbinian Perzlmaier, Heribert Zull, Franz Eberhard, Thomas Veit, Mathias Kampf, Jens Dennemarck
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Patent number: 8658442Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasma-enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).Type: GrantFiled: January 29, 2009Date of Patent: February 25, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Markus Klein, Karsten Heuser
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Patent number: 8633585Abstract: A device in accordance with one embodiment comprises component (1) and an encapsulation arrangement (2) for the encapsulation of the component (1) with respect to moisture and/or oxygen, wherein the encapsulation arrangement (2) has a first layer (21) and thereabove a second layer (22) on at least one surface (19) of the component (1), the first layer (21) and the second layer (22) each comprise an inorganic material, and the second layer (22) is arranged directly on the first layer (21).Type: GrantFiled: January 29, 2009Date of Patent: January 21, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Markus Klein, Karsten Heuser
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Publication number: 20140008770Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.Type: ApplicationFiled: February 7, 2012Publication date: January 9, 2014Applicant: OSRAM Opto Semiconductors GmbHInventors: Ewald Karl Michael Günther, Andreas Plößl, Heribert Zull, Thomas Veit, Mathias Kämpf, Jens Dennemarck, Bernd Böhm, Korbinian Perzlmaier
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Patent number: 8569079Abstract: A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.Type: GrantFiled: May 3, 2010Date of Patent: October 29, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Elmar Baur, Alexander Heindl, Bernd Bohm, Patrick Rode, Heribert Zull
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Publication number: 20120319299Abstract: A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.Type: ApplicationFiled: February 10, 2011Publication date: December 20, 2012Inventors: Tony Albrecht, Markus Maute, Martin Reufer, Heribert Zull
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Publication number: 20120070927Abstract: A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.Type: ApplicationFiled: May 3, 2010Publication date: March 22, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Elmar Baur, Alexander Heindl, Bernd Böhm, Patrick Rode, Heribert Zull
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Publication number: 20110121354Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasma-enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).Type: ApplicationFiled: January 29, 2009Publication date: May 26, 2011Applicant: OSRAM OPTP SEMICONDUCTORS GMBHInventors: Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Marks Klein, Karsten Heuser
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Publication number: 20110114992Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical v0apor deposition (PECVD).Type: ApplicationFiled: January 29, 2009Publication date: May 19, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Markus Klein, Karsten Heuser
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Publication number: 20110049730Abstract: A device in accordance with one embodiment comprises a component (1) and an encapsulation arrangement (2) for the encapsulation of the component (1) with respect to moisture and/or oxygen, wherein the encapsulation arrangement (2) has a first layer (21) and thereabove a second layer (22) on at least one surface (19) of the component (1), the first layer (21) and the second layer (22) each comprise an inorganic material, and the second layer (22) is arranged directly on the first layer (21).Type: ApplicationFiled: January 29, 2009Publication date: March 3, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Christian Schmid, Tilman Schlenker, Heribert Zull, Ralph Paetzold, Markus Klein, Karsten Heuser
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Publication number: 20080290356Abstract: The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.Type: ApplicationFiled: June 29, 2005Publication date: November 27, 2008Inventors: Gertrud Krauter, Andreas Plossl, Ralph Wirth, Heribert Zull
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Publication number: 20060151428Abstract: A method for roughening a surface of a body (1), having the following steps of: coating the surface with a mask layer (2), applying preformed mask bodies (3) on the mask layer (2), etching through the mask layer (2) at locations not covered by mask bodies (3), and etching the body (1) at locations of its surface that are free of the mask layer (2).Type: ApplicationFiled: December 18, 2003Publication date: July 13, 2006Inventors: Reiner Windisch, Ralph Wirth, Heribert Zull
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Patent number: 6661033Abstract: On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offset from one another. The output coupling areas are formed as flat truncated cones and can be rippled or zigzagged at the flanks, in order to increase the probability that the radiation produced strikes an outer interface of the output coupling layer more steeply than at a limiting angle of total reflection.Type: GrantFiled: December 30, 2002Date of Patent: December 9, 2003Assignee: OSRAM Opto Semiconductors GmbHInventors: Norbert Linder, Ralph Wirth, Heribert Zull
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Publication number: 20030122145Abstract: On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offset from one another. The output coupling areas are formed as flat truncated cones and can be rippled or zigzagged at the flanks, in order to increase the probability that the radiation produced strikes an outer interface of the output coupling layer more steeply than at a limiting angle of total reflection.Type: ApplicationFiled: December 30, 2002Publication date: July 3, 2003Inventors: Norbert Linder, Ralph Wirth, Heribert Zull