Abstract: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged on a protective film in the pixel region, a second common electrode overlapping the data line, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film and the organic insulation film, and has inclined surfaces connected to the protective film within the pixel region.

Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.

Abstract: A method for fabricating color filter layer of an LCD comprises forming a plurality of black matrixes separated at certain intervals on a color filter substrate, and forming R, G and B color filter layers by using a plurality of needles between the plurality of black matrixes on the color filter substrate.

Abstract: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged on a protective film in the pixel region, a second common electrode overlapping the data line, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film and the organic insulation film, and has inclined surfaces connected to the protective film within the pixel region.

Abstract: A shadow mask and a method of fabricating an OLED display using the same is disclosed, wherein the shadow mask is not sagging, and the shadow mask includes a plurality of columns, each column including a plurality of first or second cell-forming parts, wherein the first and second cell-forming parts are alternately arranged in the columns, and the first and second cell-forming parts provided in the adjacent columns include transmission parts having the different open directions.

Abstract: A thin film transistor array substrate includes a substrate, a gate line and a data line arranged to cross each other and to define a pixel region on the substrate, a first common line disposed to be parallel to the gate line and to cross the data line, a switch element disposed at an intersection of the gate line and data line, a first pixel electrode formed to overlap the first common line, and a second pixel electrode branched from the first pixel electrode in a plurality of strips, a second common line opposite to the first common line in the center of the pixel region, a second common electrode branched from the second common line toward the pixel region into a plurality of strips, and a third common electrode branched to overlap the data line from the second common line, and a first storage electrode branched from the first common line into the pixel region, and a second storage electrode extended to overlap the first storage electrode from the first pixel electrode.

Abstract: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged on a protective film in the pixel region, a second common electrode overlapping the data line, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film and the organic insulation film, and has inclined surfaces connected to the protective film within the pixel region.

Abstract: A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region.

Abstract: The present invention relates to an apparatus and a method of fabricating a thin film transistor array substrate. The apparatus includes a dip strip part for stripping a photo-resist pattern and a thin film formed on a substrate by using a stripper; a removing part for removing residual photo-resist and thin film from the substrate; and a jet strip part for jetting the stripper to remove residual particles of photo-resist and thin film left on the substrate. The method of fabricating includes dipping a substrate in a stripper, wherein the substrate has a photo-resist pattern and a thin film, the thin film being formed on an entire surface of the substrate so as to cover the photo-resist pattern; removing residual photo-resist and thin film using the stripper; and removing particles of residual photo-resist and thin film left on the substrate.

Abstract: A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.

Abstract: An organic electro-luminescence display device and a method for fabricating the same are provided. A first substrate and a second substrate are sealed by a sealant. An organic electro-luminescent diode is formed on the first substrate. The sealant contains a frit glass and a light-heat converter. The frit glass can reduce the moisture and oxygen transmission rate by preventing the organic electro-luminescent diode from being thermally decomposed during a curing process. Since the two substrates are encapsulated by the frit glass, the lifetime and reliability of the organic electro-luminescence display device can be increased.

Abstract: The present invention relates to an apparatus and method for repairing a liquid crystal display panel, which is capable of improving a yield thereof by darkening a bright point to minimize a defect ratio thereof. An apparatus for repairing a liquid crystal display panel according to the present invention includes: a liquid crystal display panel including a repair film formed on any one of a first substrate and a second substrate, which are facing to each other with a liquid crystal layer therebetween; and a laser irradiating device to irradiate a laser to the repair film to darken a specific area of the repair film, which is corresponded to an area where a bright point appears in the liquid crystal display panel.

Abstract: A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.

Abstract: A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.

Abstract: The present invention relates to the implementation of minute patterns and thus improving pattern resolution and transcription property. Provided is a printing substrate for a liquid crystal display comprising a transparent insulating substrate, and a material layer for dry etching formed on an upper surface of the transparent insulating substrate, the material layer for dry etching constituting a printing pattern, and a manufacturing method of a printing substrate for a liquid crystal display comprising forming a material layer on a transparent insulating substrate, applying a photo resist along a printing pattern on the upper side of the material layer, dry-etching the material layer along the printing pattern using the photo resist as an etching mask, and striping the photo resist.

Abstract: A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. In the method of fabricating the liquid crystal display device, a first conductive pattern group including a gate line and a gate electrode, a common line and a common electrode, a pixel electrode and a pad in a multiple conductive layer having a stepwise shape including a transparent conductive layer is formed on a substrate by a first mask process. An insulating film and a semiconductor layer including a plurality of contact holes are formed on the first mask pattern group by a second mask process. A second pattern group including a data line, a source electrode and a drain electrode is formed on the semiconductor layer and the semiconductor layer is patterned, and an active layer is exposed between the source electrode and the drain electrode by a third mask process.

Abstract: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged in the pixel region, a second common electrode overlapping the data line and interposed between a gate insulation film and a protective film, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film, the organic insulation film, and the gate insulation film, and has inclined surfaces connected to the surface of the substrate.

Abstract: A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include a substrate, a gate electrode formed on the substrate, a planarized insulating layer formed at a lateral surface portion of the gate electrode and at an upper portion of the substrate, a gate insulating layer formed on the planarized insulating layer containing an upper portion of the gate electrode, an active layer formed at an upper portion of the planarized insulating layer located at an upper side of the gate electrode, and a source electrode and a drain electrode formed on the active layer and separated from each other based on a channel region.

Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.

Abstract: A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.