Abstract: A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.

Abstract: A method of manufacturing an IPS switching mode liquid crystal display device includes forming a first insulation layer on a substrate, forming an electrode layer on the substrate containing the first insulation layer, forming a second insulation layer on the electrode layer, etching the second insulation layer such that the second insulation layer remains on sides of the first insulation layer, and etching the electrode layer using the remaining second insulation layer as a mask to form a plurality of electrodes. The plurality of electrodes are formed to have widths of about 0.1 ?m to 2 ?m, thus aperture ratio and transmittance are increased.

Abstract: A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad and a gate electrode on a substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the substrate including the gate line, the gate pad and the gate electrode through a second mask process, wherein the data line crosses the gate line to define a pixel region, the source electrode is extended from the data line, the drain electrode is spaced apart from the source electrode, and the active layer is disposed between the gate electrode and the source and drain electrodes, forming a passivation layer on an entire surface of the substrate including the data line, the source electrode and the drain electrode through a third mask process, the passivation layer being etched to expose the substrate in the pixel region, a part of the drain electrode, the gate pad and the data pad, and forming a pixel electrode, a gate pad ter

Abstract: A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.

Abstract: A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.

Abstract: A method for manufacturing a printing plate to acheive a precise and fine pattern by minimizing a variation of etching critical dimension is disclosed. The method uses a hard mask having an opening on an insulating substrate to form a first trench having a first depth in the insulating substrate. A first etching stopper and a first photoresist may be applied on a surface of the insulating substrate including the first trench for patterning the first photoresist by exposing the first photoresist. Likewise, a second and third trench may be formed.

Abstract: A thin film transistor substrate structure of the present invention comprises a gate and a common lines formed from a first conductive layer; a data line formed from a second conductive layer and intersecting the gate and common lines, the data line insulated from the gate and common lines by a gate insulating film, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor at the intersection; an extended portion of a common electrode in the pixel area; a pixel electrode formed from a third conductive layer connected to the thin film transistor and having an extended portion in the pixel area, a horizontal electric field formed by the pixel and common electrodes; and a plurality of pixel holes are defined, wherein the pixel electrode is disposed within at least one pixel hole and connected to a drain electrode.

Abstract: Provided are an organic electroluminescent device and a fabrication method thereof. The organic electroluminescent device includes a first substrate, a second substrate, an organic electroluminescent layer formed on the first substrate, a thin film transistor formed on the second substrate, and first and second seal lines attaching the first and second substrates to each other.

Abstract: A thin film transistor array substrate includes a gate pattern on a substrate. The gate pattern includes a gate electrode, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line. A source/drain pattern includes a source electrode and a drain electrode, a data line connected to the source electrode, and a lower data pad electrode connected to the data line. A semiconductor pattern is formed beneath the source/drain pattern. A transparent electrode pattern includes a pixel electrode connected to the drain electrode, an upper gate pad electrode connected to the lower gate pad electrode, and an upper data pad electrode connected to the lower data pad electrode. The thin film array substrate further includes a gate insulating pattern and a passivation film pattern stacked at remaining areas excluding areas within which the transparent electrode pattern is formed.

Abstract: A thin film transistor array substrate has a gate electrode of the thin film transistor, a gate line connected to the gate electrode, and a gate pad connected to the gate line; a source/drain pattern including a source electrode and a drain electrode of the thin film transistor, a data line connected to the source electrode, a data pad connected to the data line, a storage electrode formed and superimposed with the gate line; a semiconductor pattern formed in low part of the substrate; a transparent electrode pattern including a pixel electrode connected to the drain electrode and the storage electrode, a gate pad protection electrode covering the gate pad, and a data pad protection electrode covering the data pad; and a protection pattern and a gate insulation pattern stacked in a region other than the region where the transparent electrode pattern is formed.

Abstract: A method for manufacturing a printing plate is realizes a precise and fine pattern by minimizing a variation of etching critical dimension. The method includes forming a hard mask having an opening on an insulating substrate; forming a first trench having a first depth in the insulating substrate using the hard mask; coating, patterning and developing a first photoresist over an entire surface of the insulating substrate including the hard mask; and forming at least a second trench having a second depth in the insulating substrate using the hard mask, wherein the second depth is deeper than the first depth.

Abstract: An organic light emitting diode display device according to the present invention includes a first electrode on a first substrate including a first region and a second region, the second region substantially surrounding the first region; a pixel separating pattern on the first electrode in the second region; an organic light emitting pattern at least in the first region; a second electrode on the organic light emitting pattern; a contact electrode on the pixel separating pattern, the contact electrode being electrically connected to the second electrode; and a thin film transistor on the second substrate facing the first substrate, the thin film transistor being electrically connected to the contact electrode.

Abstract: A three-mask horizontal electric field applying type thin film transistor substrate is disclosed in which three conductive layers are formed. The first conductive layer contains a parallel gate and common lines and gate and common electrodes. A semiconductor pattern is formed on a gate insulating film coating the structure. The second conductive layer forms a data line, a source electrode connected to the data line and a drain electrode opposed to the source electrode on the semiconductor pattern. A protective film is coated thereon. The protective film and the gate insulating film are patterned to expose a portion of the drain electrode and a pixel hole. A third conductive layer is patterned to provide a pixel electrode connected to the exposed drain electrode and making an interface with the protective film within the pixel hole.

Abstract: A liquid crystal display device according to an embodiment of the present invention includes: a gate line formed on a substrate; a data line to provide a pixel area by crossing the gate line with a gate insulating film therebetween; a common line formed in parallel to the gate line; a thin film transistor connected to the gate line and the data line; a passivation film formed to cover the thin film transistor; a contact hole which penetrates the passivation film; a pixel electrode connected with the thin film transistor; and a common electrode connected with the common line to form a horizontal electric field with the pixel electrode, and wherein at lease one of the gate line, the data line, the common line, the pixel electrode and the common electrode is composed of a first conductive layer and a second conductive layer which is formed to cover the first conductive layer by being extended more outward than the first conductive layer, and is formed to have a border with the passivation film within the contact

Abstract: A substrate has intersecting gate and data lines with a gate insulating film therebetween, a thin film transistor provided at an intersection of the gate and data lines, a pixel electrode connected to the transistor, a pad connected to a signal line via a contact hole and containing a transparent conductive film, and a protective film overlapping a color filter array substrate to expose the film. The contact hole exposes the end of the pad and/or signal line and an adjacent area. A gate electrode, source and drain electrodes, and a contact electrode are formed from first, second, and third conductive layers, respectively. A contact hole exposes the first conductive layer of one transistor and an adjacent portion of the second conductive layer of another transistor. The contact electrode connects the exposed first and second conductive layers. Only three mask processes are used in fabricating the substrate.

Abstract: An organic light emitting device including a first electrode disposed on a substrate, a separator disposed on the first electrode in a lattice shape and having a groove-shaped isolation portion that gradually expands from an entrance toward an inside of the isolation portion, organic light emitting patterns disposed on the first electrode surrounded by the separator, the organic light emitting patterns being separated by the isolation portion, and second electrodes disposed on the organic light emitting patterns and separated by the isolation portion.

Abstract: A shadow mask and a method of fabricating an OLED display using the same is disclosed, wherein the shadow mask is not sagging, and the shadow mask includes a plurality of columns, each column including a plurality of first or second cell-forming parts, wherein the first and second cell-forming parts are alternately arranged in the columns, and the first and second cell-forming parts provided in the adjacent columns include transmission parts having the different open directions.

Abstract: A method of fabricating a thin film transistor substrate for a display device is provided.

Abstract: A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.