Abstract: An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.

Abstract: An exemplary embodiment described technology relates generally to an organic light emitting diode (OLED) display and a manufacturing method thereof. The organic light emitting diode (OLED) display according to an exemplary embodiment includes: a substrate; an encapsulation member; an organic light emitting element between the substrate and the encapsulation member; a middle sealing member including one side disposed between the substrate and the encapsulation member and another side extended from the one side to be bent and enclosing an edge of the encapsulation member; a first sealant sealing and combining the one side of the middle sealing member and the substrate to each other; a second sealant sealing and combining the other side of the middle sealing member and the encapsulation member to each other; and a getter at the one side of the middle sealing member and the encapsulation member.

Abstract: An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed to face the deposition source nozzle unit, and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, wherein a cross section of the patterning slit sheet on a plane formed by lines extending in the second direction and a third direction is bent by a set degree, wherein the third direction is perpendicular to the first and second directions.

Abstract: An alignment layer for a display device may include a plurality of rubbing patterns formed on its surface, wherein each of the rubbing patterns includes a first pattern intersecting a center axis at a first angle, and a second pattern connected to the first pattern and intersecting the center axis at a second angle, and the first pattern and the second pattern are alternately repeated. A liquid crystal display device includes the alignment layer, and a method and apparatus for treating the alignment layer are provided.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Abstract: An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

Abstract: A donor substrate may include a base substrate, a light-to-heat conversion layer, a transfer layer, and a rib structure. The light-to-heat conversion layer may be on the base substrate. The transfer layer may be on the light-to-heat conversion layer. The rib structure is on the transfer layer. The rib structure may include a plurality of tubes spaced apart from one another. In a laser induced thermal imaging process, the donor substrate including the rib structure may be easily removed from a display substrate without damage, thereby to form an organic layer pattern regularly on the display substrate.

Abstract: Provided are a source gas supply unit capable of supplying a constant amount of source gas to a deposition chamber to deposit a uniform layer, and a deposition apparatus and method using the same. The source gas supply unit includes a canister in which a source is stored, a heater heating the canister, a source gas supply pipe provided on one side of the canister, a measuring unit installed on the source gas supply pipe and measuring an amount of source gas passing through the source gas supply pipe, and a temperature controller connected to the heater and the measuring unit. The temperature controller controls the heater based on the amount of the source gas measured by the measuring unit.

Abstract: A method of manufacturing an organic light-emitting display device includes forming a gate electrode including a lower gate electrode on a gate insulating layer and an upper gate electrode on the lower gate electrode; forming a source region and a drain region at a semiconductor active layer using the gate electrode as a mask; forming an interlayer insulating layer on a substrate and etching the interlayer insulating layer, resulting in contact holes that expose portions of the source region and the drain region; forming a source/drain electrode raw material on the substrate and etching the source/drain electrode raw material to form a source electrode and a drain electrode; forming a gold overlapped lightly doped drain (GOLDD) structure having a LDD region at the semiconductor active layer by injecting impurity ions; depositing a protective layer on the substrate; and forming a display device on the substrate.

Abstract: A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer.

Abstract: A rubbing apparatus including a rubbing roller including an opening portion at a region of a circumferential surface of the rubbing roller, an outlet portion connected to the opening portion and open to an outside of the rubbing roller, and a groove portion connected to the opening portion and penetrating into the rubbing roller along the opening portion; and a rubbing cloth substantially surrounding the circumferential surface of the rubbing roller.

Abstract: An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed to face the deposition source nozzle unit, and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, wherein a cross section of the patterning slit sheet on a plane formed by lines extending in the second direction and a third direction is bent by a set degree, wherein the third direction is perpendicular to the first and second directions.

Abstract: A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

Abstract: A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract: A vapor deposition apparatus includes a canister configured to contain a vapor deposition source, the canister including a gas inlet and a gas outlet opposite to each other, a heater configured to heat the canister, a chamber in fluid communication with the canister, the chamber being configured to contain a vapor deposition target, and a carrier gas supplying unit configured to supply a carrier gas into the canister.

Abstract: A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.