Abstract: A photoresist composition includes a novolac resin having where each of R1, R2, R3, and R4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having Z1-SH, or SH-Z2-SH, where each of Z1 and Z2 is an alkyl group or an alkyl group having one through twenty carbon atoms, a sensitizer, and a solvent.

Abstract: A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 ?m to less than 4 ?m. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.

Abstract: A photoresist composition comprises about 0.5 to about 20 parts by weight of a photo-acid generator, about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group, about 1 to about 40 parts by weight of a cross-linker that comprises an alkoxymethylmelamine compound, and about 10 to about 150 parts by weight of a solvent.

Abstract: Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.

Abstract: In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

Abstract: A photo mask is provided. The mask includes: a transmitting area and a translucent area, wherein the translucent area includes a plurality of light blocking portions blocking light, and wherein the light blocking portions have a plurality of areas blocking different amounts of light. By using this type of photo mask, a substantially flat layer of photoresist film can be deposited even on top of an uneven surface. The flat photoresist film reduces processing cost and enhances the reliability of the panel manufacturing process.

Abstract: A method for manufacturing a thin film transistor array panel using a photo mask is provided. The photo mask includes: a transmitting area and a translucent area, wherein the translucent area includes a plurality of light blocking portions blocking light, and wherein the light blocking portions have a plurality of areas blocking different amounts of light. By using this type of photo mask, a substantially flat layer of photoresist film can be deposited even on top of an uneven surface to manufacture a thin film transistor array panel. The flat photoresist film reduces processing cost and enhances the reliability of the panel manufacturing process.

Abstract: A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The solvent includes a diethylene glycol dialkyl ether that includes an alkyl group including one to five carbon atoms, an ethyl 3-ethoxy propionate, an alkyl acetate that includes an alkyl group including three to eight carbon atoms, and an alkyl lactate that includes an alkyl group including one to six carbon atoms. The composition may be used to make high-quality display panels with uniformly-coated insulating layers.

Abstract: A display panel includes a substrate, signal lines, a thin film transistor, a pixel electrode and a dummy opening. The substrate has a display area and a peripheral area surrounding the display area. The signal lines are disposed on the substrate and intersect each other to define a unit pixel. The thin film transistor is electrically connected to the signal lines and disposed at the unit pixel. The pixel electrode is electrically connected to the thin film transistor. The pixel electrode is formed in the unit pixel. The dummy opening is disposed at the peripheral area and spaced apart from the signal lines.

Abstract: A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.

Abstract: A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure a first silicone compound having the structure a second silicone compound having the structure The resin composition may be used in display panels.

Abstract: A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. A content of the acryl resin is about 1% to about 15% by weight based on a total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.

Abstract: A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure a first silicone compound having the structure a second silicone compound having the structure The resin composition may be used in display panels.

Abstract: A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

Abstract: A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.

Abstract: An organic composition having liquid-crystal alignment characteristics includes a photosensitve compound and a binder resin represented by Formula 1 below: wherein each R1 is independently hydrogen or a methyl group; R2 is an alkyl group of 4-16 carbon atons; R3 is an alkyl group of 1-7 carbon atoms, a cyclooxyalkyl group of 1-7 carbon atoms, a benzyl group, or a phenyl group; l, m, and n represent molar ratios of polymerization units and are respectively from about 0.01 to about 0.50, from about 0.10 to about 0.60, and from about 0.03 to about 0.50.

Abstract: A liquid crystal display (LCD) and a method of manufacturing the same. The LCD includes a first display panel including a first field-generating electrode formed on a first insulating substrate, a second display panel opposite to the first display panel and including a second field-generating electrode formed on a second insulating substrate, a liquid crystal layer formed between the first display panel and the second display panel, and organic layers formed on the second field-generating electrode and including a cell gap maintaining unit positioned between the first display panel and the second display panel, for allowing the first display panel and the second display panel to maintain a constant gap therebetween, and a liquid crystal alignment guide unit having a tilt surface that pre-tilts the liquid crystal layer, the liquid crystal alignment guide unit and the cell gap maintaining unit having a top height difference of not less than 2 ?m.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming at least one etch target film on a substrate, forming a first reflowable etch mask on the at least one etch target film, patterning the etch target film using the first reflowable etch mask. The method further includes reflowing the first reflowable etch mask to form a second etch mask and patterning the etch target film using the second etch mask.

Abstract: A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.