Patents by Inventor Hideaki Aochi
Hideaki Aochi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10741583Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.Type: GrantFiled: October 9, 2019Date of Patent: August 11, 2020Assignee: Toshiba Memory CorporationInventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
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Publication number: 20200243560Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.Type: ApplicationFiled: April 15, 2020Publication date: July 30, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Yoshiaki FUKUZUMI, Ryota Katsumata, Masaru Kito, Masaru Kidoh, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Junya Matsunami, Tomoko Fujiwara, Hideaki Aochi, Ryouhei Kirisawa, Yoshimasa Mikajiri, Shigeto Oota
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Patent number: 10658383Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.Type: GrantFiled: July 23, 2019Date of Patent: May 19, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kito, Masaru Kidoh, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Junya Matsunami, Tomoko Fujiwara, Hideaki Aochi, Ryouhei Kirisawa, Yoshimasa Mikajiri, Shigeto Oota
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Publication number: 20200119037Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.Type: ApplicationFiled: December 11, 2019Publication date: April 16, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: YOSHIAKI FUKUZUMI, Ryota KATSUMATA, Masaru KIDOH, Masaru KITO, Hiroyasu TANAKA, Yosuke KOMORI, Megumi ISHIDUKI, Hideaki AOCHI
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Patent number: 10608009Abstract: This nonvolatile semiconductor memory device comprises: a memory cell array including memory cells; and a wiring line portion connecting the memory cell array to an external circuit. The memory cell array comprises a plurality of first conductive layers which are connected to the memory cells and arranged in a stacking direction. On the other hand, the wiring line portion comprises: a plurality of second conductive layers arranged in the stacking direction and respectively connected to the plurality of first conductive layers, positions of ends of the plurality of second conductive layers being different in a first direction crossing the stacking direction; a third conductive layer extending in the stacking direction from the second conductive layer; a channel semiconductor layer connected to one end of the third conductive layer; and a gate electrode wiring line disposed on a surface of the channel semiconductor layer via a gate insulating film.Type: GrantFiled: March 11, 2016Date of Patent: March 31, 2020Assignee: Toshiba Memory CorporationInventors: Keiji Ikeda, Masumi Saitoh, Hideaki Aochi, Takeshi Kamigaichi, Jun Fujiki
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Publication number: 20200091174Abstract: An example semiconductor device includes: n conductive layers including first to nth conductive layers stacked in a first direction; a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type closer to the nth conductive layer than the first semiconductor region; a semiconductor layer provided between the first semiconductor region and the second semiconductor region, extending in the first direction, penetrating the n conductive layers, and having an impurity concentration lower than a first conductive impurity concentration of the first region and a second conductive impurity concentration of the second region; n charge storage regions including first to nth charge storage regions provided between the n conductive layers and the semiconductor layer, and a control circuit that controls a voltage applied to the n conductive layers to always prevent charges from being stored in at least one of the n charge storage regions.Type: ApplicationFiled: February 22, 2019Publication date: March 19, 2020Applicant: Toshiba Memory CorporationInventors: Tomoya SANUKI, Yusuke HIGASHI, Hideto HORII, Masaki KONDO, Hiroki TOKUHIRA, Hideaki AOCHI
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Publication number: 20200090710Abstract: A data latch circuit includes a first n-channel transistor and a first p-channel transistor. A gate of the first n-channel transistor and a gate of the first p-channel transistor are a common gate.Type: ApplicationFiled: March 18, 2019Publication date: March 19, 2020Applicant: Toshiba Memory CorporationInventors: Keisuke NAKATSUKA, Tomoya SANUKI, Takashi MAEDA, Go SHIKATA, Hideaki AOCHI
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Publication number: 20200043944Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.Type: ApplicationFiled: October 9, 2019Publication date: February 6, 2020Applicant: Toshiba Memory CorporationInventors: Yoshiaki FUKUZUMI, Shinya ARAI, Masaki TSUJI, Hideaki AOCHI, Hiroyasu TANAKA
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Patent number: 10497717Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.Type: GrantFiled: September 21, 2018Date of Patent: December 3, 2019Assignee: Toshiba Memory CorporationInventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
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Patent number: 10482941Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.Type: GrantFiled: September 12, 2018Date of Patent: November 19, 2019Assignee: Toshiba Memory CorporationInventors: Takuya Shimada, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Michael Arnaud Quinsat, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
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Publication number: 20190348437Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.Type: ApplicationFiled: July 23, 2019Publication date: November 14, 2019Applicant: Toshiba Memory CorporationInventors: Yoshiaki FUKUZUMI, Ryota KATSUMATA, Masaru KITO, Masaru KIDOH, Hiroyasu TANAKA, Yosuke KOMORI, Megumi ISHIDUKI, Junya MATSUNAMI, Tomoko FUJIWARA, Hideaki AOCHI, Ryouhei KIRISAWA, Yoshimasa MIKAJIRI, Shigeto OOTA
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Publication number: 20190333927Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.Type: ApplicationFiled: July 11, 2019Publication date: October 31, 2019Applicant: Toshiba Memory CorporationInventors: Yoshiaki FUKUZUMI, Hideaki AOCHI
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Patent number: 10446249Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.Type: GrantFiled: September 4, 2018Date of Patent: October 15, 2019Assignee: Toshiba Memory CorporationInventors: Michael Arnaud Quinsat, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Miyano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
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Patent number: 10446212Abstract: According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.Type: GrantFiled: March 12, 2018Date of Patent: October 15, 2019Assignee: Toshiba Memory CorporationInventors: Susumu Hashimoto, Yasuaki Ootera, Tsuyoshi Kondo, Takuya Shimada, Michael Arnaud Quinsat, Masaki Kado, Nobuyuki Umetsu, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu, Yuichi Ito
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Publication number: 20190287637Abstract: According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.Type: ApplicationFiled: September 4, 2018Publication date: September 19, 2019Applicant: Toshiba Memory CorporationInventors: Michael Arnaud Quinsat, Yasuaki Ootera, Tsuyoshi Kondo, Nobuyuki Umetsu, Takuya Shimada, Masaki Kado, Susumu Hashimoto, Shiho Nakamura, Hideaki Aochi, Tomoya Sanuki, Shinji Myano, Yoshihiro Ueda, Yuichi Ito, Yasuhito Yoshimizu
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Publication number: 20190287598Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.Type: ApplicationFiled: September 12, 2018Publication date: September 19, 2019Applicant: Toshiba Memory CorporationInventors: Takuya SHIMADA, Yasuaki OOTERA, Tsuyoshi KONDO, Nobuyuki UMETSU, Michael Arnaud QUINSAT, Masaki KADO, Susumu HASHIMOTO, Shiho NAKAMURA, Hideaki AOCHI, Tomoya SANUKI, Shinji MIYANO, Yoshihiro UEDA, Yuichi ITO, Yasuhito YOSHIMIZU
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Patent number: 10418378Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.Type: GrantFiled: March 8, 2018Date of Patent: September 17, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kito, Masaru Kidoh, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Junya Matsunami, Tomoko Fujiwara, Hideaki Aochi, Ryouhei Kirisawa, Yoshimasa Mikajiri, Shigeto Oota
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Publication number: 20190273090Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.Type: ApplicationFiled: May 10, 2019Publication date: September 5, 2019Applicant: Toshiba Memory CorporationInventors: Yoshiaki FUKUZUMI, Hideaki Aochi, Mie Matsuo, Kenichiro Yoshii, Koichiro Shindo, Kazushige Kawasaki, Tomoya Sanuki
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Patent number: 10403381Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.Type: GrantFiled: March 12, 2018Date of Patent: September 3, 2019Assignee: Toshiba Memory CorporationInventors: Michael Arnaud Quinsat, Takuya Shimada, Susumu Hashimoto, Nobuyuki Umetsu, Yasuaki Ootera, Masaki Kado, Tsuyoshi Kondo, Shiho Nakamura, Tomoya Sanuki, Yoshihiro Ueda, Yuichi Ito, Shinji Miyano, Hideaki Aochi, Yasuhito Yoshimizu
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Patent number: 10403635Abstract: According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.Type: GrantFiled: August 21, 2018Date of Patent: September 3, 2019Assignee: Toshiba Memory CorporationInventors: Yoshiaki Fukuzumi, Hideaki Aochi