Abstract: Methods of depositing material onto a surface of a substrate. Exemplary methods include flowing a gas-phase precursor within the reaction chamber, condensing the precursor onto the surface of the substrate to form condensed material, and curing the condensed material to transform the condensed material to cured material. The step of curing can be a plasma process and can include use of a reactant.

Abstract: An arc shield surrounding an outer peripheral side of a fixed electrode and a movable electrode is provided, in addition to a fixed-side insulating unit in which a fixed-side insulator is provided to be connected coaxially with the arc shield on the fixed side in the axial direction of the arc shield, and a movable-side insulating unit in which movable-side insulators are provided to be connected coaxially with the arc shield on the movable side in the axial direction of the arc shield. The movable-side insulating unit has an insulator group in which movable-side insulators are provided to be connected in the axial direction, an insulator-group-side sub shield surrounding the outer peripheral side of a movable-side energizing shaft, and an insulator-group-side sub shield support part which is on the outer peripheral surface of the insulator-group-side sub shield and interposed between two adjacent movable-side insulators of the insulator group.

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.

Abstract: A storage apparatus includes a plurality of storage controllers. Each of the plurality of storage controllers includes a controller interface for connecting the storage controllers. The controller interface includes one or more logical ports corresponding to each storage controller of the connection destination. When converting the first request of the first protocol used in the storage controller into the second request of the second protocol used in the inter-storage controller network, the controller interface stores the identification information of the first request and the identification information of the second request in the send queue of the logical port.

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Abstract: An arc shield surrounding an outer peripheral side of a fixed electrode and a movable electrode is provided, in addition to a fixed-side insulating unit in which a fixed-side insulator is provided to be connected coaxially with the arc shield on the fixed side in the axial direction of the arc shield, and a movable-side insulating unit in which movable-side insulators are provided to be connected coaxially with the arc shield on the movable side in the axial direction of the arc shield. The movable-side insulating unit has an insulator group in which movable-side insulators are provided to be connected in the axial direction, an insulator-group-side sub shield surrounding the outer peripheral side of a movable-side energizing shaft, and an insulator-group-side sub shield support part which is on the outer peripheral surface of the insulator-group-side sub shield and interposed between two adjacent movable-side insulators of the insulator group.

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Abstract: Each storage controller comprises a first storage unit, an interface unit, and a processing unit which sends, to the interface unit, a parameter which instructs n-fold write of writing data in each of n-number of (n is a natural number of 2 or more) other storage controllers. When the interface unit receives the parameter, the interface unit executes each processing of acquiring the data from the first storage unit and storing the data in the second storage unit, generating n-number of requests of writing the data in each of n-number of the other storage controllers, storing each of the generated requests in n-number of the queues corresponding to each of n-number of the other storage controllers, and processing each request stored in each queue and transferring the data stored in the second storage unit to each of n-number of the other storage controllers.

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.

Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

Abstract: The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

Abstract: Methods for depositing on a surface of a substrate are disclosed. Exemplary methods include depositing a silicon oxide material using a cyclical deposition process, and reflowing the material during one or more of the step of depositing and a post-deposition anneal step. Structures including a layer of the material are also disclosed.

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.